An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties

• Published in: Вопросы атомной науки и техники
• Date: 2006
• Main Authors: Dovbnya, A.N., Yefimov, V.P., Pugachev, G.D., Dyomin, V.S., Dovbnya, N.A., Gordienko, J.E., Borodin, B.G., Babychenko, S.V., Semenets, T.A.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2006
• Subjects: Применение ускорителей в радиационных технологиях
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/79885
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties / A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev, V.S. Dyomin, N.A. Dovbnya, J.E. Gordienko, B.G. Borodin, S.V. Babychenko, T.A. Semenets // Вопросы атомной науки и техники. — 2006. — № 3. — С. 179-181. — Бібліогр.: 4 назв. — англ.

In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated....