An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated....
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| Date: | 2006 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2006
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/79885 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties / A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev, V.S. Dyomin, N.A. Dovbnya, J.E. Gordienko, B.G. Borodin, S.V. Babychenko, T.A. Semenets // Вопросы атомной науки и техники. — 2006. — № 3. — С. 179-181. — Бібліогр.: 4 назв. — англ. |