Deposition of nanocrystalline silicon films into low frequency induction RF discharge
Results of experiments on obtaining nanocrystalline silicon films with the method of stimulated plasma-enhanced chemical vapor deposition (PECVD) into low frequency induction RF discharge (880 kHz) allowed in silicon tetrachloride diluted with hydrogen are presented. High rate value, as 2.41 nm/s, o...
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| Published in: | Вопросы атомной науки и техники |
|---|---|
| Date: | 2014 |
| Main Authors: | Deryzemlia, A.M., Kryshtal, P.G., Malykhin, D.G., Radchenko, V.I., Shirokov, B.M. |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2014
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/79911 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Deposition of nanocrystalline silicon films into low frequency induction RF discharge / A.M. Deryzemlia, P.G. Kryshtal, D.G. Malykhin, V.I. Radchenko, B.M. Shirokov // Вопросы атомной науки и техники. — 2014. — № 1. — С. 147-150. — Бібліогр.: 14 назв. — англ. |
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