The origin of radiation resistance of oxides with cationic disorder
The nature, kinetics of formation and decay of absorption centers in magnesium aluminate spinel crystals were investigated. Kinetics of accumulation of the X-ray irradiation induced absorption bands consistent with mechanism of trap filling with free charge carriers through conduction band, and coul...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2002
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| Cite this: | The origin of radiation resistance of oxides with cationic disorder / V.T. Gritsyna, Yu.G. Kazarinov, V.A. Kobyakov, T.A. Bazilevska // Вопросы атомной науки и техники. — 2002. — № 3. — С. 48-52. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859826548284063744 |
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| author | Gritsyna, V.T. Kazarinov, Yu.G. Kobyakov, V.A. Bazilevska, T.A. |
| author_facet | Gritsyna, V.T. Kazarinov, Yu.G. Kobyakov, V.A. Bazilevska, T.A. |
| citation_txt | The origin of radiation resistance of oxides with cationic disorder / V.T. Gritsyna, Yu.G. Kazarinov, V.A. Kobyakov, T.A. Bazilevska // Вопросы атомной науки и техники. — 2002. — № 3. — С. 48-52. — Бібліогр.: 8 назв. — англ. |
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| container_title | Вопросы атомной науки и техники |
| description | The nature, kinetics of formation and decay of absorption centers in magnesium aluminate spinel crystals were investigated. Kinetics of accumulation of the X-ray irradiation induced absorption bands consistent with mechanism of trap filling with free charge carriers through conduction band, and could be described by model that include Coulomb blocking effect on spatially correlated defects. Two-stage decay of absorption bands after termination of X-ray irradiation is explained by electron hole recombination between centers of two different distances and/or different value of potential barriers. UV-irradiation confirm existence of complex defects which include positive and negative centers and could serve as effective annihilation center for radiation created Frenkel pairs.
Досліджені природа, кінетикі створення та розпаду центрів поглинання в кристалах магній алюмінієвої шпінелі. Кінетика накопичення смуг поглинання, наведених рентгенівським опроміненням, узгоджується з механізмом заповнення пасток вільними носіями зарядів через зону провідності та може бути описана моделлю, що враховує ефект кулонівського блокування на просторово корельованих дефектах. Двохстадійний розпад смуг поглинання після припинення рентгенівського опромінення пояснюється електронно-дірковою рекомбінацією між центрами, які знаходяться на різних відстанях та/або мають різну величину потенційних бар’єрів. УФ-опромінення підтверджує існування комплексних дефектів, які містять позитивні та негативні центри, та можуть слугувати центрами ефективної анігіляції радіаційно створених Френкелівських пар.
Исследовались природа, кинетики образования и распада центров поглощения в кристаллах магний алюминиевой шпинели. Кинетика накопления полос поглощения, наведенных рентгеновским облучением, согласуется с механизмом заполнения ловушек свободными носителями зарядов через зону проводимости и может быть описана моделью, которая включает эффект кулоновской блокировки на пространственно коррелированных дефектах. Двухстадийный распад полос поглощения после прекращения рентгеновского облучения объясняется электронно-дырочной рекомбинацией между центрами, находящимися на различных расстояниях и/или с различной величиной потенциальных барьеров. УФ-облучение подтверждает существование комплексных дефектов, которые включают положительные и отрицательные центры, и могут служить центрами эффективной аннигиляции радиационно созданных Френкелевских пар.
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| fulltext |
УДК 538.37
THE ORIGIN OF RADIATION RESISTANCE OF OXIDES WITH
CATIONIC DISORDER
V.T.Gritsyna, Yu.G.Kazarinov, V.A.Kobyakov, T.A.Bazilevska
Kharkiv National University, Kharkiv Ukraine;
K.E.Sickafus
Los Alamos National Laboratory, Los Alamos NM USA
Досліджені природа, кінетикі створення та розпаду центрів поглинання в кристалах магній алюмінієвої шпінелі.
Кінетика накопичення смуг поглинання, наведених рентгенівським опроміненням, узгоджується з механізмом
заповнення пасток вільними носіями зарядів через зону провідності та може бути описана моделлю, що враховує ефект
кулонівського блокування на просторово корельованих дефектах. Двохстадійний розпад смуг поглинання після
припинення рентгенівського опромінення пояснюється електронно-дірковою рекомбінацією між центрами, які
знаходяться на різних відстанях та/або мають різну величину потенційних бар’єрів. УФ-опромінення підтверджує
існування комплексних дефектів, які містять позитивні та негативні центри, та можуть слугувати центрами ефективної
анігіляції радіаційно створених Френкелівських пар.
Исследовались природа, кинетики образования и распада центров поглощения в кристаллах магний алюминиевой
шпинели. Кинетика накопления полос поглощения, наведенных рентгеновским облучением, согласуется с механизмом
заполнения ловушек свободными носителями зарядов через зону проводимости и может быть описана моделью, которая
включает эффект кулоновской блокировки на пространственно коррелированных дефектах. Двухстадийный распад по-
лос поглощения после прекращения рентгеновского облучения объясняется электронно-дырочной рекомбинацией меж-
ду центрами, находящимися на различных расстояниях и/или с различной величиной потенциальных барьеров. УФ-об-
лучение подтверждает существование комплексных дефектов, которые включают положительные и отрицательные цен-
тры, и могут служить центрами эффективной аннигиляции радиационно созданных Френкелевских пар.
The nature, kinetics of formation and decay of absorption centers in magnesium aluminate spinel crystals were investigated.
Kinetics of accumulation of the X-ray irradiation induced absorption bands consistent with mechanism of trap filling with free
charge carriers through conduction band, and could be described by model that include Coulomb blocking effect on spatially
correlated defects. Two-stage decay of absorption bands after termination of X-ray irradiation is explained by electron hole
recombination between centers of two different distances and/or different value of potential barriers. UV-irradiation confirm
existence of complex defects which include positive and negative centers and could serve as effective annihilation center for
radiation created Frenkel pairs.
INTRODUCTION
Magnesium aluminate spinel MgAl2O4
(MgO·nAl2O3) has been proposed as a potential optical
and insulation material for use in nuclear fusion
reactors, since it possesses excellent radiation resistance
properties. The high tolerance of spinel can have several
origins such as the high concentration of structural
vacancies in spinel, difficulties in forming clusters of
point defects, or high degrees of cationic disorder [1].
Therefore, the nature and initial state of defects in spinel
crystals can play an important role in the behavior of
this material under irradiation.
The unit cell of MgAl2O4 spinel consists of a face-
centered cubic lattice of 32 oxygen ions and 64
tetrahedral and 32 octahedral interstices between these
anions. In normal spinel crystals, Mg2+ ions occupy 1
8
of the tetrahedral interstices, while Al3+ ions occupy ½
of the octahedral positions. It is known that spinel
crystals grown under laboratory conditions are partially
inverse, i.e. up to 0.3 Al3+ ions per unit cell occupy
tetrahedral sites and equal part of Mg2+ are placed in
octahedral positions, producing so-called antisite defects
(Al3+
Mg)+ and (Mg2+
Al)- with excess of positive and
negative charge, respectively. Non-stoichiometric spinel
crystals of n>1.0 contain also additional cationic
vacancies due to charge compensation of Al3+ in
tetrahedral positions. Thermodynamically non-
equilibrium process of crystal growth leads also to
lattice defects in both cationic and anionic sub-lattices.
Synthetic crystals also unavoidably contain impurity
ions of different charges and sizes, such as Fe, Mn, Cr;
these species replace constituent ions in different ways
and lead to the formation of lattice defects.
It is known, that impurity ions of different valence to
compare with substituting ions create charged defects,
and because the potential of such defect is long-range
Coulombic one, it may influence on the behavior of
defects in the vicinity of this impurity ion. Also if
impurity ion isovalent to substituting ions, but different
size it also creates distortion in regular crystal lattice.
On different estimation methods it is not short-range
also. The range of elastic deformation, in the vicinity of
impurity ions or lattice defects could be tenths of
Angstroms. So, during growth process when
temperature is high and mobility of different species
also high, we can expect the coagulation of some
defects forming complexes of spatially correlated point
defects. Particularly, we can expect the formation of
interacting pairs impurity ion – vacancy, or pairs of
antisite defects. The interaction of defects situated on
some distances each other (and also optical centers) will
lead to peculiarities in processes of optical center
48 ______________________________________________________
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ, 2002, №3.
Серия: Физика радиационных повреждений и радиационное материаловедение (81), с.48-52.
formation under irradiation, and their stability in
dependence on time after termination of irradiation and
annealing temperature. In this work we describe the
results of investigations of the nature of defects and
their spatial distribution in spinel crystals from studies
of time dependencies of optical absorption in
stoichiometric (n=1.0) and nonstoichiometric (n=2.5)
spinel crystals during and after prolonged X-ray or UV-
irradiation, that allow us to reveal the existence of
spatially correlated defect pairs, which could serve as
centers of annihilation of radiation created Frenkel
pairs.
EXPERIMENTAL DETAILS
Single crystals of stoichiometric magnesium
aluminate spinel (MgO·nAl2O3) of stoichiometric
(n=1.0) and nonstoichiometric (n=2.5) compositions
were grown by the Verneuil method using the same
starting materials. Samples with dimensions of
12x10 mm2 and 0.7 mm thickness were cut from single
crystals and polished on both sides to an optical finish.
Optical absorption was measured in the range of
1.2-6.4 eV using either a single or dual beam
spectrophotometer. Irradiations were performed using a
Cu X-ray tube operating at 40 kV and 10 mA. For
ultraviolet (UV) irradiation there were used either
mercury 600 W lamp or deuterium 400 W lamp, both
with quartz tubes. During irradiation sample were
cooled with powerful fan to keep its temperature below
30ºC. Accumulation experiment was provided with the
same samples annealed after each irradiation at 650ºC
during 0.5 hour.
NATURE OF DEFECTS AND OPTICAL
CENTER
In as grown spinel crystals there exists a variety of
defects, which can create the optical centers capturing
charge carriers created by ionizing irradiation. Anionic
vacancies capture free electrons leading to formation of
F+- (one electron) and F-center (two electrons). Both
tetrahedral and octahedral cationic vacancies could
capture one or several holes creating V-type centers.
The spectra of radiation induced optical absorption of
stoichiometric spinel are shown in Fig.1. From previous
investigations it is known [2,3], that transitions in V-
type centers lead to formation of wide absorption band
with maximum at photon energy of 3.1 eV. Absorption
bands of F-type centers are at 4.75 and 5.3 eV for F+-
and F-center, respectively. Decomposition of
experimental spectra with Gaussian curves taking into
consideration of position of well defined bands gives
additional bands at the 3.87 and 4.15 eV [4]. These
bands were tentatively identified with optical centers on
antisite defects. Al3+ in tetrahedral site creates excess of
positive charge and can capture free electron forming
optically active center [Al3+
tet]+ +e-→ [Al3+
tet]0, which
has absorption band at 4.15 eV, Mg2+ in octahedral site
creates defect with uncompensated negative charge and
could capture hole, also forming optically active center
[Mg2+
oct]-+h+ → [Mg2+
oct]0, which has absorption band at
3.78 eV. Because of low affinity of electron in [Al3+
tet]0–
center
1 2 3 4 5 6 7
-0,05
0,00
0,05
0,10
0,15
0,20
0,25
A
bs
or
ba
nc
e
di
ffe
re
nc
e,
a
rb
. u
n.
Photon energy, eV
MgO•Al2O3
5min
10min
40 min
160 min
MgO•2.5Al2O3
5 min
10 min
40 min
160 min
Fig.1 Radiation induced optical absorption in magne-
sium aluminate spinel.
it is unstable even at room temperature, causing slow
decay of absorbance in time. Annealing of neutron
irradiated crystals first of all leads to destruction of band
at 3.87 and 4.25 eV. It should be noticed that neutron
irradiation was provided at 80°C, thus hole centers with
absorption band at 3.1 eV were annealed during
irradiation [5]. Comparison of absorption annealed at
different temperatures for stoichiometric and non-
stoichiometric spinel crystals allow us to find optical
absorption bands related to corresponding centers in
MgO∙2.5Al2O3 spinel crystals. The main absorption
bands are at 5.02 eV (F+ -center), 5.7 eV (F-center),
3.66 eV ([Mg2+
oct]0-center) and 4.5 eV ([Al3+
tet]0-center).
According to Mollvo-Ivey relation such shift of electron
band to higher energy is caused by decrease of lattice
constant in spinel from 8.084 Å to 7.989 Å for
stoichiometric and non-stoichiometric spinel.
ACCUMULATION OF OPTICAL
ABSORPTION CENTERS
The accumulation of optical absorption centers was
studied by consequently measurements of additively
irradiated to different time. Growth curves of different
absorption bands in spinel crystals during the prolonged
irradiation with X-rays is shown in Fig. 2.
Evidently dependencies of different bands on the
irradiation time with X-ray are different. To understand
the type of kinetics leading to growth of absorption
centers we replotted this graphs in semilog scale and
found these dependences сlose to straight lines (Fig. 3).
Let us consider processes that take place in
insulators under X-ray irradiation. High energy of X-ray
photons leads to generation of free electrons in
conduction band, which could be trapped by defects as
an independent random process. The trapping rate could
be described by a simple first – order reaction rate:
( )0
dn n n Q
dt
σ= −
(1)
where n0 - is the initial concentration of traps, n- the
number of filled traps, σ- is the capture cross-section of
traps, Q- is the flux density of generated electrons.
49
0 20 40 60 80 100 120 140 160
0,00
0,02
0,04
0,06
0,08
0,10
0,12
0,14
X-irradiation MgO•1.0Al
2
O
3
3.1 eV
4.75 eV
5.3 eV
3.8 eV
4.15 eVA
bs
or
ba
nc
e
di
ffe
re
nc
e,
a
rb
. u
n.
Time, min
Fig. 2 Optical absorption difference curves in stoi-
chiometric spinel crystals for various absorption bands
(indicated by photon energy) as a function of X-ray ir-
radiation time
10 100
0,00
0,02
0,04
0,06
0,08
0,10
0,12
0,14
0,16
0,18
0,20
0,22
MgO•Al2O3
V-center
F+-center
F-center
electron antisite
hole antisite
MgO•2.5Al2O3
V-center
F+-center
F-center
electron antisite
A
bs
or
ba
nc
e
di
ffe
re
nc
e,
a
rb
. u
n.
Time, min
Fig.3 Accumulation of optical absorption bands under
X-ray irradiation in spinel crystals
Because of rate of generation of free electrons does
not depend on time, the total fluence of charge carriers
after time t through unit area will be equal Qt.
Solving Eq. (1) yields the well known first order
relaxation expression:
( )0 1 expn n Qtσ= − − (2)
If we suppose the existence of spatially correlated
defects, the trapping of charge carriers is less probable
on locations close to filled traps because of Coulombic
repulsion. The capture probability decreases when the
space –charge density increases. A simple derivation of
this decreasing capture probability can be given when it
is assumed, that every filled trap inactivates a fixed
volume h of dielectric for further trapping [6]. The
volume in which trapping can occur is then V-h, where
V is the total volume of dielectric. When n charges are
trapped the probability will decrease by a factor
( )1 nh
V− . Because of 1h V < < approximation is given
( ) ( )h h
V V1- expn n≈ − . The trapping rate could be written
by
( )0 expdn hn n Q n
dt V
σ = − −
(3)
In real situation a large fraction of available traps n0
is inactivated by a relative small number n, hence
0n n< < . Solving equation in this approximation we
have:
0ln 1V hn n Q t
h V
σ = +
(4)
By using new denotes k=V/h, and p=n0Qσ, we
obtain
ln 1pn k t
k
= +
. (5)
This leads to logarithmic dependence of optical
center accumulation on irradiation time in accordance
with experimental data (Fig. 3).
1 10 100
0,00
0,02
0,04
0,06
0,08
MgO•1.0Al
2
O
3
V-center
F+-center
electron antsite
hole antsite
MgO•2.5Al
2
O
3
V-center
F+-center
electron antsite
A
bs
or
ba
nc
e
di
ffe
re
nc
e,
a
rb
. u
n.
Time, min
Fig.4. Optical absorption difference curves in spinel
crystals for various centers as a function of UV
irradiation time
Accumulation of absorption centers under UV-
irradiation presented in the same scale is very different
of that under X-ray irradiation (Fig. 4).
0 2 4 6 8 10 12 14 16 18 20 22
-1,5
-1,0
-0,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
-L
n(
1-
D
/D
0)
Time, min
MgO•1.0Al
2
O
3
V-center
electron antisite
hole antisite
MgO•2.5Al
2
O
3
V-center
F+-center
F-center
enectron antisite
Fig. 5. –Ln(1-D/D0) as a function of UV irradiation
time curves in spinel crystals for various centers
Because the UV-photon energy is less than gap in
spinel crystals (hν=6.8 eV to compare with Eg=8.8 eV),
50
the generation of free charge carriers and formation of
optical absorption centers through conduction bands is
Very unlikely. According to results of X-ray irradiation
experiments there exist spatially correlated nearby situ-
ated defects, so charge exchange under UV-
irradiation could take place directly from one defect
to another, or from impurity ions to defect and vise
versa. Such process could be described by the first-order
reaction (1). Indeed, replotting of time dependences of
absorption center accumulation under UV-irradiation in
appropriate related to Eq. 1 coordinates ( )0-ln 1-D D
show one-stage process, that support existence of close
localized complementary defects (Fig. 5).
Decay of absorption centers as a function of time
Decay of optical absorption bands after termination
of X-ray irradiation follows the power low show two
stages process with different characteristic times: short
stage- (6—10) min) and long one- (50—80 min)
(Fig. 6).
1 10 100
0,65
0,7
0,75
0,8
0,85
0,9
0,95
111
MgO•1.0Al
2
O
3
F+-center
hole antsi te
electron antisi te
MgO•2.5Al
2
O
3
V-center
F+-center
F-center
electron antisi teR
el
at
iv
e
ab
so
rb
an
ce
, a
rb
. u
n.
Time, min
Fig.6. Decay of optical absorption centers after X-ray
irradiation in spinels of different composition at room
temperature
X-ray irradiation primary creates free charge carriers
that could be captured by different traps to form
optically active centers. Some of them, the opposite sign
of charge carriers, interacting with each other have
possibility to annihilate with different probabilities in
dependence on separate distance. Two definite
characteristic times indicate the existence of two kinds
1 10 100
0,86
0,88
0,9
0,92
0,94
0,96
0,98
111
MgO•1.0Al2O3
F+-center
hole antisite
electron antisite
MgO•2.5Al2O3
V-center
F+-center
F-center
electron centerR
el
at
iv
e
ab
so
rb
an
ce
, a
rb
. u
n.
Time, min
Fig.7. Decay of optical absorption centers after UV-
irradiation in spinels of different composition at room
temperature
of spatially correlated defects. Because of the
possible process under UV-irradiation is charge
exchange between defects only through intra-band
transitions, which could happen for the nearby-situated
defects, the reverse process (recombination) between
the nearest centers goes through only one stage (Fig. 7).
The high concentration of antisite defects (about 0.2
per unit cell) could be one of the reasons for formation
of complex defects. Because of lattice defects and
impurity ions are centers of local distortion of crystal
field with long-range elastic deformation, the interaction
between defects and impurity ions, or between defects
themselves, will lead to heterogeneous distribution and
formation of complexes. Such complex defects are
bipolar in nature [7] and could serve as centers of
attraction of both counterparts of Frankel pairs leading
to annihilation of radiation created defects. The
existence of additional to displacive also ionizing
irradiation [8] leads to formation of dipoles of optical
centers, because of charge compensation of dipoles of
defects, and consequently to retardation of radiation
defect creation.
CONCLUSION
During these investigations it was shown that in as
grown crystals there are high concentration of complex
defects, which include both as point defect with positive
charge excess also negative charge excess. One of the
most important such complexes could be the spatially
correlated antisite defects, concentration of which
reaches as much as 0,2 per unit cell. Such complex
defect creates the local lattice distortion (perturbation)
in crystal lattice, which serve as a center of attraction of
defects created by irradiation. Because the complex
defects are bipolar in nature both interstitials and
vacancies will be attracted by the same complex leading
to annihilation of Frenkel pairs that prevents the
formation of stable point defects including clusters for
loop formation. So, the main reason of radiation
resistance of spinel is the existence of spatially
correlated defects of opposite charge at the background
of high concentration of the intrinsic defects, which
assist the high mobility of radiation induced defects to
centers of annihilation.
ACKNOWLEDGMENT
The authors thank Ms. G.I. Belykh and
Mr. V.N. Volokitin for characterization of spinel
samples and writing of computer program. This research
was made possible in part by Award No. UE2-2226 of
the U.S. Civilian Research and Development
Foundation for the Independent States of the Former
Soviet Union (CRDF).
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material? //J.Nucl. Mater. 1995, v.219, p.143−151.
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spectra of MgAl2O4 crystals exposed to ionizing
radiation //J. Appl. Phys. 1982, v.53, p. 265−270.
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3.A.Ibarra, F.J.Lopez, M.Jimenez de Castro. V centers
in MgAl2O4 spinels //Phys. Rev. 1991, v.B44, p.7256−
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52
The Origin of Radiation Resistance of Oxides with Cationic Disorder
Introduction
Experimental details
Nature of defects and optical center
Accumulation of optical absorption centers
Conclusion
Acknowledgment
References
|
| id | nasplib_isofts_kiev_ua-123456789-80083 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T15:29:20Z |
| publishDate | 2002 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Gritsyna, V.T. Kazarinov, Yu.G. Kobyakov, V.A. Bazilevska, T.A. 2015-04-11T16:48:22Z 2015-04-11T16:48:22Z 2002 The origin of radiation resistance of oxides with cationic disorder / V.T. Gritsyna, Yu.G. Kazarinov, V.A. Kobyakov, T.A. Bazilevska // Вопросы атомной науки и техники. — 2002. — № 3. — С. 48-52. — Бібліогр.: 8 назв. — англ. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/80083 538.37 The nature, kinetics of formation and decay of absorption centers in magnesium aluminate spinel crystals were investigated. Kinetics of accumulation of the X-ray irradiation induced absorption bands consistent with mechanism of trap filling with free charge carriers through conduction band, and could be described by model that include Coulomb blocking effect on spatially correlated defects. Two-stage decay of absorption bands after termination of X-ray irradiation is explained by electron hole recombination between centers of two different distances and/or different value of potential barriers. UV-irradiation confirm existence of complex defects which include positive and negative centers and could serve as effective annihilation center for radiation created Frenkel pairs. Досліджені природа, кінетикі створення та розпаду центрів поглинання в кристалах магній алюмінієвої шпінелі. Кінетика накопичення смуг поглинання, наведених рентгенівським опроміненням, узгоджується з механізмом заповнення пасток вільними носіями зарядів через зону провідності та може бути описана моделлю, що враховує ефект кулонівського блокування на просторово корельованих дефектах. Двохстадійний розпад смуг поглинання після припинення рентгенівського опромінення пояснюється електронно-дірковою рекомбінацією між центрами, які знаходяться на різних відстанях та/або мають різну величину потенційних бар’єрів. УФ-опромінення підтверджує існування комплексних дефектів, які містять позитивні та негативні центри, та можуть слугувати центрами ефективної анігіляції радіаційно створених Френкелівських пар. Исследовались природа, кинетики образования и распада центров поглощения в кристаллах магний алюминиевой шпинели. Кинетика накопления полос поглощения, наведенных рентгеновским облучением, согласуется с механизмом заполнения ловушек свободными носителями зарядов через зону проводимости и может быть описана моделью, которая включает эффект кулоновской блокировки на пространственно коррелированных дефектах. Двухстадийный распад полос поглощения после прекращения рентгеновского облучения объясняется электронно-дырочной рекомбинацией между центрами, находящимися на различных расстояниях и/или с различной величиной потенциальных барьеров. УФ-облучение подтверждает существование комплексных дефектов, которые включают положительные и отрицательные центры, и могут служить центрами эффективной аннигиляции радиационно созданных Френкелевских пар. The authors thank Ms. G.I. Belykh and Mr. V.N. Volokitin for characterization of spinel samples and writing of computer program. This research was made possible in part by Award No. UE2-2226 of the U.S. Civilian Research and Development Foundation for the Independent States of the Former Soviet Union (CRDF). en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Физика радиационных повреждений и явлений в твердых телах The origin of radiation resistance of oxides with cationic disorder Article published earlier |
| spellingShingle | The origin of radiation resistance of oxides with cationic disorder Gritsyna, V.T. Kazarinov, Yu.G. Kobyakov, V.A. Bazilevska, T.A. Физика радиационных повреждений и явлений в твердых телах |
| title | The origin of radiation resistance of oxides with cationic disorder |
| title_full | The origin of radiation resistance of oxides with cationic disorder |
| title_fullStr | The origin of radiation resistance of oxides with cationic disorder |
| title_full_unstemmed | The origin of radiation resistance of oxides with cationic disorder |
| title_short | The origin of radiation resistance of oxides with cationic disorder |
| title_sort | origin of radiation resistance of oxides with cationic disorder |
| topic | Физика радиационных повреждений и явлений в твердых телах |
| topic_facet | Физика радиационных повреждений и явлений в твердых телах |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/80083 |
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