Photonuclear transmutation doping of the n-type detector silicon
New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation dopi...
Збережено в:
| Опубліковано в: : | Вопросы атомной науки и техники |
|---|---|
| Дата: | 2002 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2002
|
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/80100 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859613146618003456 |
|---|---|
| author | Bochek, G.L. Kulibaba, V.I. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Ryabka, P.M. |
| author_facet | Bochek, G.L. Kulibaba, V.I. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Ryabka, P.M. |
| citation_txt | Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation doping is studied for increase of the detector silicon resistivity from about 1 to 5 kOhm x cm and for correction of the resistivity distribution over the silicon bulk. The studies of photonuclear doping were performed applying the beams of gamma-bremsstrahlung with Egmax ~ 25 MeV. Using the doping efficiency data, the cost of detector silicon doping was calculated for case of the bremsstrahlung of 25 MeV energy electrons.
|
| first_indexed | 2025-11-28T15:29:36Z |
| format | Article |
| fulltext |
PHOTONUCLEAR TRANSMUTATION DOPING
OF THE n-TYPE DETECTOR SILICON
G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka
National Science Center “Kharkov Institute of Physics and Technology”, Kharkov, Ukraine
e-mail: maslov@kipt.kharkov.ua
New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector
silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority
(Al) in high resistant detector silicon was developed. The transmutation doping is studied for increase of the detector
silicon resistivity from about 1 to 5 kOhm×cm and for correction of the resistivity distribution over the silicon bulk.
The studies of photonuclear doping were performed applying the beams of gamma-bremsstrahlung with Eγ
max ≈ 25
MeV. Using the doping efficiency data, the cost of detector silicon doping was calculated for case of the
bremsstrahlung of 25 MeV energy electrons.
PACS: 29.40.Wk
INTRODUCTION
The doping is carried out to produce an n-type high-
resistivity semiconductor of detector quality. The
urgency of the problem is due to the fact that in the
manufacture of n-type high-resistance silicon (for
fabrication of nuclear detectors) by the crucible-free
zone melting method, the yield of silicon with a resistivity
higher than 8 kOhm×cm is not above 10% [1].
Transmutation doping of crystal silicon is used
mainly for low-resistivity silicon processing in
microelectronics technology using reactor neutrons.
Transmutation doping applications for detector silicon
production connected with the difficulties. The
concentration of the doping minority in the detector
silicon with the resistivity above 1 kOhm×cm is of the
order of 1012 atom/cm3. The control of such a doping
minority by neutron transmutation doping is very
difficult and, therefore, the main part of the detector
silicon by the neutron doping is done with resistivity in
range of 0.5-1 kOhm×cm [1]. For increase the resistivity
of the rest silicon, it is necessary to introduce an exactly
controllable amount of the acceptor impurity.
The technique of photonuclear transmutation doping
was proposed [2,3] to use for production of the p-type
low-resistivity silicon. In works [4,5] was presented first
trying to increase of a resistivity of n-type silicon. In
this work, the resistivity of the doped silicon was
studied as a function of the dopant concentration and of
the initial resistivity of the primary silicon (0.8-4 kOhm
×cm). It is shown that a strict dosage, of aluminium
dopant allows permit of production of n- and p-type
silicon with controllable resistivity. The technique for
precise measurement of transmutation doping
concentration is described.
1. TRANSMUTATION DOPING
TECHNIQUE
The production of aluminum by photonuclear
transmutation doping of silicon is accomplished as a
result of the following nuclear reactions [1]
AlSinSi 27
s 3.4
2728 ),(
+βγ (1)
AlpSi 2728 ),(γ . (2)
To determine the concentration of the aluminum
produced may be used the measurement of the γ-
radiation appearing in the process of photonuclear
doping because of the reaction
SiAlpSi 29
min 6.6
2930 ),(
+βγ , Eγ=1273 keV. (3)
The 29Al decay is accompanied by the gamma-
quantum radiation with the 1237 keV energy. The use of
this reaction is the most convenient for measurements
taking into account the radiating time and the gamma-
radiation energy being recorded.
When carrying out the work under this stage of this
technique test, the silicon samples were manufactured
having a normalized mass and resistivity known to a
high accuracy. The accuracy of determining the
efficiency of Al production, using the technique offered,
was checked by comparison of the transmutation doping
results for the specimens with the different initial
resistivity. The bremsstrahlung beam with the energy of
max
γE = 25 MeV was used for these experiments
(Fig. 1).
52 PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2002, № 2.
Series: Nuclear Physics Investigations (40), p. 52-54.
Fig. 1. The silicon resistivity after transmutation
doping. 1.2,3 – initial resistivity of the silicon
specimens 4: 2.5 and 0.9 kOhm×cm, accordingl
Fig. 1 represents the detector silicon resistivity after
the photonuclear doping as a function of the
transmutation aluminum concentration in silicon [2].
The experimental results gave support to the accuracy of
the proposed technique sufficient for providing the
photonuclear doping of the detector silicon having the
low initial concentration of the doping. The Al
concentration was measured with the use of the
proposed technique for measurement of the induced γ-
activity in specimens-witnesses. To obtain a resistivity
value after irradiation of the specimens, the special
annealing and contact deposition were done.
It is evident, that the full compensation of detector
silicon (maximum resistivity) is well coinciding with
the concentration value of noncompensated phosphor
for silicon with the initial resistivity 4 and 2.5 kOhm×
cm. The concentration value of noncompensated
phosphor in Fig. 1 indicated by vertical dotted lines.
The full compensation of 0.9 kOhm×cm silicon may
be realized using transmutation doping concentration
slightly more, than initial concentration value of
noncompensated phosphor. Obviously, it may be
explained that the low-resistivity silicon (0.9 kOhm×
cm) has an impurity, which is the sink for Al atoms.
2. DOPING THE DETECTOR SILICON
INGOTS
The measurement of the resistivity ρ of the grown
detector silicon ingots evidences that the distribution of
this resistivity across the ingot has the form "W".
Therefore, the injection of doping aluminium should be
nonuniform. The gamma-quanta radiation should be
directed to the end of the ingot and have the maximum
formed by a proper way. This maximum can be selected
by locating the ingot at a certain distance from the
electrons-bremsstrahlung converter. To obtain a suitable
doping for 100-mm ingots diameter was measured the
distributions of nuclear-active gamma-quanta at
different distances from the converter (Fig. 2).
Fig. 2. The Al atom production in silicon at
distances 180 (•), 500 (○) and 840 (∆) mm from the
converte
In Fig. 2 shown are the results of measuring the
number of produced Al atoms at distances 180, 500 and
840 mm from the converter (curves 1, 2 and 3,
respectively). The most suitable for ingot doping is the
gamma-quanta distribution at a distance 840 mm.
However, because of such irradiation distance, the
significant part of gamma-radiation is lost and the
radiation time should be significantly prolonged.
Therefore, it may be proposed to use the narrower
gamma-distribution at a small distance, which is
directed to the end of the rotating ingot with the beam
centre displacement relatively to the rotation centre (∆r).
The possibility to apply this proposal was checked
on the ingot-simulator that was an aluminium cylinder
of a 100 mm diameter and 135 mm length. The silicon
specimens-witnesses were located both at the front and
back ends of the cylinder. The most suitable distribution
was obtained for irradiation distance 180 mm and beam-
ingot centres displacement ∆r = 25 mm. In Fig. 3 shown
is the Al product distribution at the front end (2), back
end (3) and the total value (1).
The calculations have shown that such a doping is
3.9 fold more economic as compared with the
irradiation to the ingot centre at an 840 mm distance. To
obtain the uniform irradiation over the whole bulk the
ingot should be placed so that during first half-hour the
irradiation was passing through one end of the ingot,
and during second half-hour through another end.
So, for the ingot irradiation with concrete
distribution of R0 one can select the radiation field
configuration with a best efficiency and maximum
economic effect.
Fig. 3. Distribution of Al production on the
simulator: at the front end (2); at the back end (3); total
value (1)
53
The simple device for ingot rotation under
irradiation is shown at Fig. 4.
Fig. 4. The device for ingot rotation under irradiation
3. ECONOMIC POINT OF
THE DETECTOR SILICON DOPING
To evaluate the cost of detector silicon doping it is
necessary to measure the transmutation Al concentration
required for increase of the silicon resistivity to 5 kOhm
×cm for silicon with different initial resistivity. The
measurements were done (Fig. 5) for silicon with the
initial resistivity in the range of 0.8–4 kOhm×cm.
Fig. 5. The transmutation Al concentration required for
increase of the silicon resistance to 5 kOhm×cm
The cost of doping is determined with taking into
account the measured dependence and the expected cost
of the beam time of 25 MeV electron energy and ≤500 µ
A average current (linear electron accelerator "EPOS").
The cost of silicon doping of an initial resistivity ≤1
kOhm×cm (for production of the detector silicon of a
resistivity ≥ 5 kOhm×cm) is $100 per one kg. It is seen
from Fig. 5 that the Al concentration required for silicon
subdoping decreases with the initial resistivity
increasing. However, the time expenses for crystals
arrangement under the beam and for measurement
carrying out decrease the gain of cost for silicon with
higher initial resistivity. Therefore, the cost of
increasing the resistance of silicon with the ∼2 kOhm×
cm initial resistivity is ∼$80 per one kg. The high cost
of silicon with the resistivity above 3 kOhm×cm (∼
$1000 per one kg) indicates on the expediency of the
technique of increasing the detector silicon resistance
being developed.
CONCLUSIONS
The transmutation doping was carried out to produce
an n-type high-resistivity semiconductor of detector
quality. The express technique for measurement of the
concentration of transmutation producing the acceptor
minority (Al) in high resistant detector silicon was
developed. Using this technique, the efficiency of
photonuclear transmutation doping was investigated and
the new experimental quantitative data on efficiency of
the detector silicon doping with the gamma-ray
bremsstrahlung was obtained.
The cost of doping ∼$100 is determined with taking
into account the measured dependence on the doping
efficiency and the expected cost of ≥25 MeV electron
beam by the ≤500 µA average current (linear electron
accelerator "EPOS"). The cost of silicon doping of an
initial resistivity ≥1 kOhm×cm (for production of the
detector silicon of a resistivity ≥5 kOhm×cm) is ≤$100
per one kg. The high cost of silicon with the resistivity
above 3 kOhm×cm (∼$1000 per one kg) indicates on the
expediency of the technique of increasing the detector
silicon resistance being developed.
ACKNOWLEDGMENTS
The authors are very thankful to many colleagues for
the valuable discussions and constructive remarks. This
work was supported by STCU under the Grant № 285.
REFERENCES
1. P. Dreier. High resistivity silicon for detector
applications // Nucl. Instr. and Meth. A 1990,
v. 288, p. 272-277.
2. Joachim Martinua. Verfaren zum Hersteller
von homogen dotlertem Halbleitermaterial mit p-
Zeitfahigkeit. Patent BRD 1976, № 2439430.
3. V.V. Zablotskij, N.А. Ivanov, V.F. Коsмаch
et al. // Sov. J. Phys. and Tech. Semic. 1986, v 4,
p. 625-628 (in Russian).
4. V.V. Zablotskij, N.А. Ivanov, V.F. Коsмаch
et al. // Sov. J. At. Energy 1991, v. 6, p. 561-563 (in
Russian).
5. D.J.S. Findlay and D.H.J. Totterdell //
Semicond. Sci. Technol. 1988, v 3, p 388-396.
6. N.I. Maslov, S.V. Blazhevich, G.L. Bochek
et al. Photonuclear transmutation doping of silicon
crystals by aluminum // Problems of Atomic
54
Science and Technology. Ser:PRD&RS, Kharkov,
NSC ”KhIPT” 1996, v. 1(64), p. 58-59.
55
PACS: 29.40.Wk
INTRODUCTION
1. TRANSMUTATION DOPING TECHNIQUE
2. DOPING THE DETECTOR SILICON INGOTS
THE DETECTOR SILICON DOPING
CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
|
| id | nasplib_isofts_kiev_ua-123456789-80100 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-11-28T15:29:36Z |
| publishDate | 2002 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Bochek, G.L. Kulibaba, V.I. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Ryabka, P.M. 2015-04-11T19:00:11Z 2015-04-11T19:00:11Z 2002 Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ. 1562-6016 PACS: 29.40.Wk https://nasplib.isofts.kiev.ua/handle/123456789/80100 New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation doping is studied for increase of the detector silicon resistivity from about 1 to 5 kOhm x cm and for correction of the resistivity distribution over the silicon bulk. The studies of photonuclear doping were performed applying the beams of gamma-bremsstrahlung with Egmax ~ 25 MeV. Using the doping efficiency data, the cost of detector silicon doping was calculated for case of the bremsstrahlung of 25 MeV energy electrons. The authors are very thankful to many colleagues for the valuable discussions and constructive remarks. This work was supported by STCU under the Grant № 285. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Experimental methods and processing of data Photonuclear transmutation doping of the n-type detector silicon Фотоядерное трансмутационное легирование детекторного кремния n-типа Article published earlier |
| spellingShingle | Photonuclear transmutation doping of the n-type detector silicon Bochek, G.L. Kulibaba, V.I. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Ryabka, P.M. Experimental methods and processing of data |
| title | Photonuclear transmutation doping of the n-type detector silicon |
| title_alt | Фотоядерное трансмутационное легирование детекторного кремния n-типа |
| title_full | Photonuclear transmutation doping of the n-type detector silicon |
| title_fullStr | Photonuclear transmutation doping of the n-type detector silicon |
| title_full_unstemmed | Photonuclear transmutation doping of the n-type detector silicon |
| title_short | Photonuclear transmutation doping of the n-type detector silicon |
| title_sort | photonuclear transmutation doping of the n-type detector silicon |
| topic | Experimental methods and processing of data |
| topic_facet | Experimental methods and processing of data |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/80100 |
| work_keys_str_mv | AT bochekgl photonucleartransmutationdopingofthentypedetectorsilicon AT kulibabavi photonucleartransmutationdopingofthentypedetectorsilicon AT maslovni photonucleartransmutationdopingofthentypedetectorsilicon AT ovchinnikvd photonucleartransmutationdopingofthentypedetectorsilicon AT potinsm photonucleartransmutationdopingofthentypedetectorsilicon AT ryabkapm photonucleartransmutationdopingofthentypedetectorsilicon AT bochekgl fotoâdernoetransmutacionnoelegirovaniedetektornogokremniântipa AT kulibabavi fotoâdernoetransmutacionnoelegirovaniedetektornogokremniântipa AT maslovni fotoâdernoetransmutacionnoelegirovaniedetektornogokremniântipa AT ovchinnikvd fotoâdernoetransmutacionnoelegirovaniedetektornogokremniântipa AT potinsm fotoâdernoetransmutacionnoelegirovaniedetektornogokremniântipa AT ryabkapm fotoâdernoetransmutacionnoelegirovaniedetektornogokremniântipa |