Photonuclear transmutation doping of the n-type detector silicon
New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation dopi...
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| Veröffentlicht in: | Вопросы атомной науки и техники |
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| Datum: | 2002 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2002
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862607750202130432 |
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| author | Bochek, G.L. Kulibaba, V.I. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Ryabka, P.M. |
| author_facet | Bochek, G.L. Kulibaba, V.I. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Ryabka, P.M. |
| citation_txt | Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation doping is studied for increase of the detector silicon resistivity from about 1 to 5 kOhm x cm and for correction of the resistivity distribution over the silicon bulk. The studies of photonuclear doping were performed applying the beams of gamma-bremsstrahlung with Egmax ~ 25 MeV. Using the doping efficiency data, the cost of detector silicon doping was calculated for case of the bremsstrahlung of 25 MeV energy electrons.
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| first_indexed | 2025-11-28T15:29:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-80100 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-11-28T15:29:36Z |
| publishDate | 2002 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Bochek, G.L. Kulibaba, V.I. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Ryabka, P.M. 2015-04-11T19:00:11Z 2015-04-11T19:00:11Z 2002 Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ. 1562-6016 PACS: 29.40.Wk https://nasplib.isofts.kiev.ua/handle/123456789/80100 New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation doping is studied for increase of the detector silicon resistivity from about 1 to 5 kOhm x cm and for correction of the resistivity distribution over the silicon bulk. The studies of photonuclear doping were performed applying the beams of gamma-bremsstrahlung with Egmax ~ 25 MeV. Using the doping efficiency data, the cost of detector silicon doping was calculated for case of the bremsstrahlung of 25 MeV energy electrons. The authors are very thankful to many colleagues for the valuable discussions and constructive remarks. This work was supported by STCU under the Grant № 285. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Experimental methods and processing of data Photonuclear transmutation doping of the n-type detector silicon Фотоядерное трансмутационное легирование детекторного кремния n-типа Article published earlier |
| spellingShingle | Photonuclear transmutation doping of the n-type detector silicon Bochek, G.L. Kulibaba, V.I. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Ryabka, P.M. Experimental methods and processing of data |
| title | Photonuclear transmutation doping of the n-type detector silicon |
| title_alt | Фотоядерное трансмутационное легирование детекторного кремния n-типа |
| title_full | Photonuclear transmutation doping of the n-type detector silicon |
| title_fullStr | Photonuclear transmutation doping of the n-type detector silicon |
| title_full_unstemmed | Photonuclear transmutation doping of the n-type detector silicon |
| title_short | Photonuclear transmutation doping of the n-type detector silicon |
| title_sort | photonuclear transmutation doping of the n-type detector silicon |
| topic | Experimental methods and processing of data |
| topic_facet | Experimental methods and processing of data |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/80100 |
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