Photonuclear transmutation doping of the n-type detector silicon

• Published in: Вопросы атомной науки и техники
• Date: 2002
• Main Authors: Bochek, G.L., Kulibaba, V.I., Maslov, N.I., Ovchinnik, V.D., Potin, S.M., Ryabka, P.M.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2002
• Subjects: Experimental methods and processing of data
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/80100
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ.

New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation dopi...