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Photonuclear transmutation doping of the n-type detector silicon

New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation dopi...

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Veröffentlicht in:	Вопросы атомной науки и техники
Datum:	2002
Hauptverfasser:	Bochek, G.L., Kulibaba, V.I., Maslov, N.I., Ovchinnik, V.D., Potin, S.M., Ryabka, P.M.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2002
Schlagworte:	Experimental methods and processing of data
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/80100
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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