Photonuclear transmutation doping of the n-type detector silicon
New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation dopi...
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| Date: | 2002 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2002
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/80100 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ. |