Dolgolenko, A. (2006). The annealing of high - level doped materials on the base of the n – and p – Si₀.₇ Ge₀.₃ solid solution under reactor irradiation. Вопросы атомной науки и техники.
Chicago Style (17th ed.) CitationDolgolenko, A.P. "The Annealing of High - Level Doped Materials on the Base of the N – and P – Si₀.₇ Ge₀.₃ Solid Solution Under Reactor Irradiation." Вопросы атомной науки и техники 2006.
MLA (8th ed.) CitationDolgolenko, A.P. "The Annealing of High - Level Doped Materials on the Base of the N – and P – Si₀.₇ Ge₀.₃ Solid Solution Under Reactor Irradiation." Вопросы атомной науки и техники, 2006.
Warning: These citations may not always be 100% accurate.