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Studying electro-physical characteristics of detecting elements on the ohmic side of silicon microstrip detector

The results of studying the ohmic side of the double-sided microstrip detectors (DSMD) possessing the diode separating p⁺ stop structure of different type and size are presented. The effect of the p⁺ stop structure on the DSMD interstrip resistance and interstrip capacitance is considered. Предс...

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Bibliographic Details
Published in:Вопросы атомной науки и техники
Date:2005
Main Authors: Maslov, N.I., Potin, S.M., Starodubtsev, A.F.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2005
Subjects:
Экспериментальные методы и обработка даных
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/81227
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Studying electro-physical characteristics of detecting elements on the ohmic side of silicon microstrip detector / N.I. Maslov, S.M. Potin, A.F. Starodubtsev // Вопросы атомной науки и техники. — 2005. — № 6. — С. 50-53. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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