Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation
In this work is shown that: (i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra; (ii) The Si-SiO2 interface structure is regulated under the ele...
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| Опубліковано в: : | Вопросы атомной науки и техники |
|---|---|
| Дата: | 1999 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/81353 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation / L.A. Matveeva, E.F. Vanger, R.Yu. Holine // Вопросы атомной науки и техники. — 1999. — № 3. — С. 103-104. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-81353 |
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Matveeva, L.A. Vanger, E.F. Holiney, R.Yu. 2015-05-14T20:12:53Z 2015-05-14T20:12:53Z 1999 Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation / L.A. Matveeva, E.F. Vanger, R.Yu. Holine // Вопросы атомной науки и техники. — 1999. — № 3. — С. 103-104. — Бібліогр.: 7 назв. — англ. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/81353 In this work is shown that: (i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra; (ii) The Si-SiO2 interface structure is regulated under the electron irradiation that was shown by the compression of the location region of the plastic deformation to the interface region; (iii) For IMS relaxation and structural regulation of the interface the electron irradiation with high energy is more effective than that with energy less than the threshold one for the silicon. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation Использование электронных лучей для релаксации механических напряжений и структурного упорядочения границы раздела SI-SIO₂ Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| spellingShingle |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation Matveeva, L.A. Vanger, E.F. Holiney, R.Yu. |
| title_short |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_full |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_fullStr |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_full_unstemmed |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_sort |
electron beam application for mechanical stress relaxation and for si-sio₂ interface structural regulation |
| author |
Matveeva, L.A. Vanger, E.F. Holiney, R.Yu. |
| author_facet |
Matveeva, L.A. Vanger, E.F. Holiney, R.Yu. |
| publishDate |
1999 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| title_alt |
Использование электронных лучей для релаксации механических напряжений и структурного упорядочения границы раздела SI-SIO₂ |
| description |
In this work is shown that:
(i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra;
(ii) The Si-SiO2 interface structure is regulated under the electron irradiation that was shown by the compression of the location region of the plastic deformation to the interface region;
(iii) For IMS relaxation and structural regulation of the interface the electron irradiation with high energy is more effective than that with energy less than the threshold one for the silicon.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/81353 |
| citation_txt |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation / L.A. Matveeva, E.F. Vanger, R.Yu. Holine // Вопросы атомной науки и техники. — 1999. — № 3. — С. 103-104. — Бібліогр.: 7 назв. — англ. |
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2025-12-02T04:50:05Z |
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