Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron
The modulator based on PFN described above has been operated during several hundreds hours at a PFN charge voltage U=20 kV and repetition rate of 50 Hz. At present the klystron and modulator are used for RF power supply of a photogun cavity of VEPP-5 injection complex. PFN testing at operating condi...
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| Опубліковано в: : | Вопросы атомной науки и техники |
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| Дата: | 1999 |
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| Мова: | English |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
1999
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron / V.E. Akimov, P.A. Bak, R.N. Galimov, I.V. Kazarezov, A.A. Korepanov, N.H. Kot // Вопросы атомной науки и техники. — 1999. — № 3. — С. 50-51. — Бібліогр.: 5 назв. — англ. |
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Akimov, V.E. Bak, P.A. Galimov, R.N. Kazarezov, I.V. Korepanov, A.A. Kot, N.H. 2015-05-14T20:37:09Z 2015-05-14T20:37:09Z 1999 Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron / V.E. Akimov, P.A. Bak, R.N. Galimov, I.V. Kazarezov, A.A. Korepanov, N.H. Kot // Вопросы атомной науки и техники. — 1999. — № 3. — С. 50-51. — Бібліогр.: 5 назв. — англ. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/81368 The modulator based on PFN described above has been operated during several hundreds hours at a PFN charge voltage U=20 kV and repetition rate of 50 Hz. At present the klystron and modulator are used for RF power supply of a photogun cavity of VEPP-5 injection complex. PFN testing at operating conditions under a voltage of 40 kV will be carried out in the future. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron Модулятор на базе конденсаторов К15-10 для питания клистрона КИУ-12 Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron |
| spellingShingle |
Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron Akimov, V.E. Bak, P.A. Galimov, R.N. Kazarezov, I.V. Korepanov, A.A. Kot, N.H. |
| title_short |
Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron |
| title_full |
Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron |
| title_fullStr |
Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron |
| title_full_unstemmed |
Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron |
| title_sort |
modulator based on k15-10 capacitors for a power supply of the kiu-12 klystron |
| author |
Akimov, V.E. Bak, P.A. Galimov, R.N. Kazarezov, I.V. Korepanov, A.A. Kot, N.H. |
| author_facet |
Akimov, V.E. Bak, P.A. Galimov, R.N. Kazarezov, I.V. Korepanov, A.A. Kot, N.H. |
| publishDate |
1999 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| title_alt |
Модулятор на базе конденсаторов К15-10 для питания клистрона КИУ-12 |
| description |
The modulator based on PFN described above has been operated during several hundreds hours at a PFN charge voltage U=20 kV and repetition rate of 50 Hz. At present the klystron and modulator are used for RF power supply of a photogun cavity of VEPP-5 injection complex. PFN testing at operating conditions under a voltage of 40 kV will be carried out in the future.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/81368 |
| citation_txt |
Modulator based on K15-10 capacitors for a power supply of the KIU-12 klystron / V.E. Akimov, P.A. Bak, R.N. Galimov, I.V. Kazarezov, A.A. Korepanov, N.H. Kot // Вопросы атомной науки и техники. — 1999. — № 3. — С. 50-51. — Бібліогр.: 5 назв. — англ. |
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2025-11-24T15:58:13Z |
| last_indexed |
2025-11-24T15:58:13Z |
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| fulltext |
MODULATOR BASED ON K15-10 CAPACITORS FOR A POWER
SUPPLY OF THE KIU-12 KLYSTRON
V.E. Akimov, P.A. Bak, R.H. Galimov, I.V. Kazarezov, A.A. Korepanov, N.H. Kot
Budker Institute of Nuclear Physics, Novosibirsk, Russia
KIU-12 klystrons, the most powerful among
serial domestic microwave devices of a ten-centimeter
range, have found wide application in scientific
laboratories of the countries of CIS. In the Institute of
Nuclear Physics SB RAS that klystron is used in a
complex research of accelerating system units for
VEPP-5 preinjector prototype [1]. The klystron was
powered by a standard modulator on the basis of a
double pulse forming network (PFN), obtained from
NSC KIPT (Ukraine). Unfortunately, the long-term
operation of the modulator in NSC and further in INP
SB RAS has caused the failure of a main modulator
component – pulse forming network assembly.
Therefore there was a necessity to modify the modulator
on the basis of available capacitors K15-10 of 0,01 µF
capacitance on voltage of 40 kV.
The circuit features, design, and operational
experience of the pulse forming network (PFN) are
described below.
PFN DESIGN
PFN is of a blumlein type because the pulse
transformer design remains the same (transformer turns
ratio K=7). The characteristic impedance of the network
is half the klystron load impedance relative to the
primary winding of the pulse transformer. Service
experience obtained during development and
maintenance of numerous facilities based on the
capacitors considered above [2, 3, 4] has been taken into
account in PFN design.
Previous research [2, 5] revealed that the main
cause of capacitor breakdown is associated with the
partial discharges at the washer area. The washer is
brazed to the silver coating and serves as a terminal for
connecting and supporting the capacitor. Therefore
capacitors of lead-free design are used in PFN in order
to increase its reliability and exclude capacitor failures
due to partial discharges.
PFN (Fig.1) consists of 12 capacitor sections (1)
(6 sections for each half-line), each section contains 8
capacitors (2), series-parallel connected with one
another in each cell. Springs made of beryllium bronze
(3) are installed to provide an electric contact between
the capacitors, a section is tied by steel studs (4). Given
the insufficient capacitance of every capacitor (average
capacitance is 9000 pF), the total PFN capacitance is
0.215 µF.
The coil design (5) allows us to tune the network
bodily by shifting the core (6) within the coil.
The transformer oil is used as an insulation
media.
Fig. 1: PFN design.
SPECIAL FEATURES OF THE MODULATOR
CIRCUIT
Fig. 2 represents the simulation circuit of a
blumlein type PFN. Two end of line clipper (EOLC)
systems R1-D1 and R2-D2 are the special features of
this circuit. R1-D1 circuit is placed in parallel with a
thyratron to limit the thyratron inverse voltage. R2-D2
circuit is needed for dissipation of energy retained in
pulse transformer magnetization inductance µL at the
end of pulse voltage on the klystron. These EOLC
systems limit the maximal voltage difference on PFN
capacitors, therefore their service life increases. The
thyratron in the circuit is represented as an ideal switch
S and diode D3. The resistor R2 is chosen so that in the
process of dissipation of energy stored in µL of the
pulse transformer, PFN capacitance does not recharge,
and voltage undershoot on the klystron does not exceed
safe limits. Therefore, resistance R2, on the one hand,
should be small enough, but, on the other hand, small
value of R2 leads to increasing of an average current
through the diode. The optimal value R2=60 Ohm has
been chosen by simulation of processes in the circuit
shown on Fig.2. Value of resistance R1 has an effect on
both the voltage undershoot on the thyratron and on
oscillation processes in PFN after a pulse, i.e.
oscillations in PFN will be damped slower if R1
appreciably differs from PFN characteristic impedance
of 14 Ohms.
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 1999. №3.
Серия: Ядерно-физические исследования. (34), с. 50-51.
50
Fig. 2: PFN simulation circuit.
Simulation of these processes shows, that at
R1=14 Ohms the inverse voltage applied to the
thyratron after cut-off does not exceed the maximum
safe value. Current and voltage curves in circuit
elements in a process of voltage pulse forming on the
load are shown in Fig.3.
Fig. 3: Current and voltage curves in PFN circuit
elements.
Diodes D1 and D2 were assembled of high-
voltage stacks SDL 800. D1 is 2 diodes connected in
parallel, and D2 is 4 diodes. Resistors R1 and R2 are
assembled from resistors of ТVО-60 type. Power
dissipated in R1 is ~100 W, and in R2 is ~350 W.
Circuits described above are located on the tank cover
of PFN.
FEATURES OF KIU-12 KLYSTRON CONTROLS
A klystron control circuit is equipped by
“Regime and protection” unit, which scans every pulse
of modulator and klystron operation. In the case of
forward or inverse overvoltage on PFN or rectifier, start
of the thyratron is cancelled. It is also cancelled when a
voltage on the klystron exceeds 300 kV in the previous
pulse, as well as at klystron electron beam perveance
decreasing, withloss of vacuum in the klystron, and after
three-fold discharge inside the klystron. In the case of
discharge on the klystron dielectric window surface or
in the waveguide section the klystron continues to
operate in diode mode, and input RF power pulse is
shifted by 100 µs relative to the modulator pulse. After
one-minute delay the pulses are brought together
automatically. Every case of non-nominal operation is
indicated by a LED on “Regime and protection” unit’s
panel.
RESULTS OF THE WORK
The modulator based on PFN described above
has been operated during several hundreds hours at a
PFN charge voltage U=20 kV and repetition rate of
50 Hz. At present the klystron and modulator are used
for RF power supply of a photogun cavity of VEPP-5
injection complex. PFN testing at operating conditions
under a voltage of 40 kV will be carried out in the
future.
REFERENCES
[1] M.S. Avilov et al., Prototype of VEPP-5/
preinjector. − Atomic science and technics issues ,
“Nuclear physics research” series, 1997, is. 2,3, 206 p.
(in Russian).
[2] S.B. Vasserman et al., High-voltage capacitance
pulse power accumulator. − Preprint INP 80-129,
Novosibirsk, 1980 (in Russian).
[3] Electron beam generator for a prototype of VLEPP
RF generator./ V.E. Balakin et. al. – In: Atomic science
and technics issues, “Physical experiment technics”
series. Kharkov, 1982, is. 1(10), pp. 6-8 (in Russian).
[4] I.V. Kazarezov, Sitall Capacitors in High Voltage
Pulse Generators, Proceeding of the VII International
Workshop on Linear Colliders, Sept. 29-Oct. 3, 1997
Zvenigorod, Russia.
[5] I.V. Kazarezov, Pulse electron beam source for
powerfull RF oscillations of centimetric range
generation. – PhD thesis, Novosibirsk, 1985, 153 p. (in
Russian).
51
PFN design
special features of the modulator circuit
Results of the work
References
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