The silica and silicon luminescence induced by fast hydrogen ions
The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light...
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| Veröffentlicht in: | Вопросы атомной науки и техники |
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| Datum: | 2000 |
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| Sprache: | Englisch |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2000
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862633212409282560 |
|---|---|
| author | Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. |
| author_facet | Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. |
| citation_txt | The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light intensity and implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton dose in quartz was proposed.
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| first_indexed | 2025-11-30T14:34:30Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-81676 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-11-30T14:34:30Z |
| publishDate | 2000 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. 2015-05-19T08:46:51Z 2015-05-19T08:46:51Z 2000 The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/81676 533.9 The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light intensity and implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton dose in quartz was proposed. The autors are grateful to the Member of National
 Academy of Science of Ukraine V.Storighko for help. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Нерелятивистская плазменная элeктрoника The silica and silicon luminescence induced by fast hydrogen ions Article published earlier |
| spellingShingle | The silica and silicon luminescence induced by fast hydrogen ions Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. Нерелятивистская плазменная элeктрoника |
| title | The silica and silicon luminescence induced by fast hydrogen ions |
| title_full | The silica and silicon luminescence induced by fast hydrogen ions |
| title_fullStr | The silica and silicon luminescence induced by fast hydrogen ions |
| title_full_unstemmed | The silica and silicon luminescence induced by fast hydrogen ions |
| title_short | The silica and silicon luminescence induced by fast hydrogen ions |
| title_sort | silica and silicon luminescence induced by fast hydrogen ions |
| topic | Нерелятивистская плазменная элeктрoника |
| topic_facet | Нерелятивистская плазменная элeктрoника |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/81676 |
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