The silica and silicon luminescence induced by fast hydrogen ions
The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2000
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| Cite this: | The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ. |
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| author | Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. |
| author_facet | Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. |
| citation_txt | The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ. |
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| description | The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light intensity and implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton dose in quartz was proposed.
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ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ 2000. №1.
Серия: Плазменная электроника и новые методы ускорения (2), с. 189-192.
189
UDK 533.9
THE SILICA AND SILICON LUMINESCENCE
INDUCED BY FAST HYDROGEN IONS.
O.V.Kalantaryan, S.I.Kononenko, V.I.Muratov.
Kharkov National University, Kharkov, Ukraine
The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷
0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra
of SiO2 were changed under hydrogen ions bombardment essentially. The relation between light intensity and
implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible
regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was
not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover
oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton
dose in quartz was proposed.
1. Introduction
It is well known that charged particle beam
bombardment of different materials is accompanied by
electromagnetic radiation. The projectile energy are
spent at two alternative correlated channels, namely,
luminescence generation and creation or annealing
defects in the sample. The some properties of substance
are changed in this case. These changes are determined
by forming and annealing of different types of defects
and setting a dynamic equilibrium of these processes in
the samples. [1,2]. The intensity of these processes
increase by ion irradiation of the sample essentially.
Moreover, in this case the situation is complicated
because ions have the nuclear cross-section more
significantly than other particles. The parameters of
ionluminescence are unique channel of obtaining of an
information about an absorption dose and sample
properties.
In modern science and technology the some
materials are widely used under high irradiation
conditions. It took place at the manufacture of ion
implanted semiconductors, in the space, in a active
region of nuclear reactors, in the accelerators, etc.. The
commonly used materials for microelectronic are silica
and silicon. These materials are jointly used for
producing MOS-structures ( metal - oxide -
semiconductor ). The results of investigations of these
material ionluminescence are presented in this paper.
In visible region the luminescence spectra of
silica ( induced of different sources) consists of two
wide bands (see, for example, [3]). The first band
maximum was situated near 455 nm wavelength. This
radiation was connected with one of intrinsic silica
defects, namely, E′-centers [4].The second band has
maximum which was near 645 nm. Its nature are
determined another intrinsic silica defects as non-
bridging oxygen centers [5]. The optical properties of
silica were significantly changed by means of hydrogen
present in sample. It was shown in [6] that absorption of
light bands with maximums at 4,75 eV and 2,0 eV was
essentially decreased by implanted hydrogen. Usually
this absorption bands were related with non-bridging
oxygen centers.
In the previous investigations [1-3] the silica
luminescence was studied for irradiation doses less than
1021 keV/cm3 and fixing wavelength only. It is necessary
to emphasize that the luminescence was investigated
from previously irradiated sample by different particles
and was excited by ultraviolet sources at majority
carried out experiments.
There is a considerable amount of experiments
devoted to the research into silicon luminescence. Most
of them study the radiation spectra of the sample in the
infrared region of wavelength using photoluminescence
methods [7 - 12]. The spectra consisted of the
selfluminescence band in the range from 1.08µm to
1.27µm (1.15 - 0.96 eV) and from some narrow lines.
The authors of those articles explained the generation of
these lines by the presence of admixture centres and
some defects formed by preliminary forces upon the
sample (irradiation by ions [7,10], electrons [8,9]
neutrons and γ-quanta [12], temperature annealing,
cleavage [13]).
The structure Si - SiO2 is one of the most
important objects of experimental research because it is
widely used in the electronic industry. It is usually
created by different ways of silicon oxidation. The
thickness of dioxide film is usually from some ten to
hundred nm. Photoluminescence [14],
cathodoluminescence [15 - 17] and electroluminescence
[14, 18, 19] spectra of these samples consist of some
wide bands with their maxima at the wavelength of 650
nm (1.9 eV), 540 - 550 nm (2.3 - 2.2 eV), 460 - 450
nm (2.7 - 2.6 eV) and 280 - 290 nm (4.4 - 4.3 eV). A
number of mechanisms of generating these bands has
been proposed.
Particularly the radiation at the maximum at
650 nm is explained with the center of nonbridge
oxygen in the dioxide film. The radiation at the
maximum 460 - 480 nm is connected with the
shortliving defect recombination such as split silicon-
oxygen bonds in SiO2. At this time there are some other
models of the luminescence centres. This paper presents
the results of different materials luminescence induced
by fast light ionbombardment in the near ultraviolet and
visible regions of wavelength. There are silica and
silicon samples in our investigation. The experimental
results of study of luminescence spectra of silica during
190
ion bombardment by implanted doses up to 1024
keV/cm3 were obtained. The relation between
ionluminescence silica spectra parameters and
absorption doses was investigated. Investigation of the
possibilities to discover oxide layer formed by the
natural way on a silicon surface are shown.
2.Experiment
The measurements of the luminescence induced
by ion bombardment of the different targets were carried
out using the setup described in detail in [20]. The
block diagram of this setup is shown at the Fig. 1. Two
different Van der Graaf accelerators were used in
experiments. The parametres of first accelerator were
Fig. 1 The block diagrame of setup
such as: energies from 0.8 MeV to 2.4 MeV and
current density up to 1 µA/cm2 and for second case: the
energy range was 210-420 keV and current density was
up to 30 µA/cm2. The targets were situated in vacuum
chamber 1. The residual gas pressure up to 10-4 Pa was
maintained by a magnetic-discharge pump. There were
targes pure silica and silicon samples of 0.9999 purity
(specific resistivity about 1Ω⋅m were of two kinds: with
rough and polished surfaces) in our experiments.The
optical radiation from the target surface was pojected
by one of two optical channels 2 on the entrance slit of
the grating monochromator 3.
The first channel consist of the flexible light
guide and the quartz condenser. In this case, the
samplewas set at the angle 30° with respect to the beam
(all angles were measured relatively to the perpendicular
to the target surface). The optical radiation was
collected by face of flexible light guide under chosen
direction. The light from the back of light guide was
projected by quartz condenser on the entrance slit of
grating monochromator 3. The observation angle was
changed from 0° to 60° by turning of the light guide face
in a plate which it perpendicular to the target surface.
Detection of the luminescence was performed using a
photomultiplier detector in the wavelength region of
400-700 nm. Such experimental scheme permited to
change the angle of incedence and the observation angle
independently. But sensitivity and spectral range were
smaller than of the second optical channel.
For the second channel, the optical radiation
from the target surface was pojected by quartz
condenser on the entrance slit of the grating
monochromator.. The target was put at an angle of 45
with respect to the beam. The axis of the optical system
was put at the angle of 90° with respect to the beam.
The radiation was studied in the wavelength region
250 to 800 nm.
Detection of light was performed using a
photomultiplier detector in the current mode. The
obtaining informations arrived to small computer 5 by
means interface 4. Detection and signal processing,
control of the all setup system work were carried by
this computer 5. The optical channels of the device
were calibrated in respect of the incandescence
spectrum-metric lamp 6. Luminescence spectra were
corrected according to the spectral sensitivity and
were normalized per the beam current.
3.Experimental results and discussion
The typical luminescence spectra of nonirradiated si-
lica under ion bombardment are shown in Fig.2 (curve 1).
This spectra form was earlier observed for pure
silica by the different type of excitation [1-3 ]. The most
intensive (first) band had maximum at 460 nm . Its
presence was connected with E′ - center defects [4]. The
second band had the maximum at 650 nm and situated
on the long wave wing of the first band. The irradiation
in this band was associated with non-bridging oxygen
centers [5].
Wavelength, nm
I,
ar
b.
un
it
0
2
4
6
8
10
400 450 500 550 600 650 700
1 2
Fig.2 The ionluminescence spectra of SiO2 under proton
bombardment : curve 1 - nonirradiated quartz, curve2 -
by implanted proton doses of 3⋅ 1021 cm -3m ( 0.7 ⋅1024
keV/cm-3)
The ionluminescence spectra was changed when the
proton (or other hydrogen ions - H2
+, H3
+) dose
increased. The intensity of the long wave wing of the
first band grown ( see Fig. 2, curve 2). The intensity of
the short wave wing and maximum were unchanged.
The ratio of intensities in the point with wavelength of
λ=620 nm to ones at first band maximum increased from
5,6⋅10-2 ( nonirradiated silica) to 7,3⋅10-2 ( for dose ∼
3⋅1021 cm-3). The intensity of second band decreased and
became almost indistinguishable on background of the
first band. There results were obtained for proton energy
of 210 keV. The similar results were obtained for using
ion energy and for different observation angles.
The spectra changes were determined by
implanting dose. We proposed method for control of
191
absorption hydrogen doses by using of the ratio R of
luminescence intensity at 650 nm to ones at 620 nm. It
was obtained that the amount of K = R/l, (where l was
path length of proton in SiO2) was depended only from
the hydrogen ion density in the silica sample but was
practically independent from projectile energy and
observation angles (see Fig. 3 ).
Fig.3 The coefficient K dependence from proton dose:
curve 1 -the proton energy 420 keV; curve 2 - the
proton energy 210 keV
At Fig. 4 are presented the luminescence
spectra of the rough (curve 1) and polished (curve 2)
samples, while being irradiated by protons with energy
of 0.8 MeV.
200 300 400 500 600 700
0
50
100
150
200
250
300
2
1
In
te
ns
ity
, a
rb
. u
ni
ts
Wavelength, nm
Fig. 4 The spectra of ionluminescence of silicon induced
by 0.8 MeV: 1 - rough sample; 2 - polished sample
The spectra consist of three wide bands. The
most intensive band begins from 380 nm and smoothly
increases in the long wavelength side. Increasing the
proton energy leads to decreasing light yield in this
band for both studied samples. This radiation band is
the shortwave border of the silicon selfluminescence
which was observed by some authors [7-9]. But this
was not observed while researching
electroluminescence [14,19] and cathodoluminescence
[15 - 17] of Si - SiO2 systems. The radiation intensity in
this band slightly depends on the surface condition
state though the rough surface increases it. In the
wavelength region of about 300 - 700 nm silicon is
nontransparant [21]. The calculations based on the
optical constants of silicon show that the skin-layer
depth in this case does not exceed 30 nm and it is much
less than the path of protons with given energy (this path
is of the order of 10-3 cm). Hence radiation yield of
these wavelengths we measure is possible only from the
narrow surface region. It is known that specific energy
losses for protons with given energies E are described
by the formula of Bethe [22]:
− = ⋅
dE
dx
M Z e
mE
Z N mE
IM
2 1
2 4
2
π
ln ,
where Z1, Z2 are charges of a projectile and the target
atom correspondingly; e, m are charge and mass of
electron, M is mass of ion; N is density of target atoms,
I is average potential of excitation of target atoms. As
we can see from the formula the specific losses decrease
with the growth of projectile energy. Hence,
increasing the energy of bombarding particles leads to
decreasing of the absolute value of energy given by
ion to layer where the radiation comes out. As the result
the light yield decreases. It was this regularity that we
observed in our experiment.
The light band with the maximum at 460 nm
(2.7 eV) is clearly seen on the background of the first
band and is present in all the spectra of ionluminescence
of rough sample. The intensity of this band falls down
when the proton energy increases. For the polished
sample it is almost indistinguishable at the energy of 2.4
MeV and essentially less than for the rough sample at
the energy of 0.8 and 1.6 MeV . The existence of the
band with the maximum at 460 nm (see Fig.4.) is the
distinctive feature of SiO2 ( to compare with Fig2,
curve 1 ). It is connected with the presence of the
dioxide film on silicon surface. The generation of
radiation with its maximum at 460 nm was observed
when the oxide film thickness was more than 40 - 50
nm for electroluminescence or cathodoluminescence
investigations [15,16]. In our case the band with its
maximum at 460 nm is generated in the oxide film
with the thickness of some atomic layers formed by the
natural way. The band with maximum at 650 nm was
indistinguishable among the others.
The fact that the light yield in this band
depends on the surface roughness can be explained with
the following two factors. First, rough surface leads
to the forming of more thick oxide layer. Second, rough
surface increases the efficiency of transforming the
excitations which spread in the oxide layer into electro-
magnetic wave.
Radiation with its maximum at 326 - 328 nm
(~ 3.78 eV) is present in the rough sample spectrum in
the whole region of proton energies. The polished
sample has such a radiation of essentially less intensity,
which was observed clearly only at Ep = 2.4 MeV.
Increasing the proton energy leads to the growth of
radiation intensity but the band shape was not changed .
This radiation has not been observed earlier neither in
the Si - SiO2 structures, nor in pure silicon.
The generating mechanism of the band with the
maximum at 326 - 328 nm is not clear still. The oxide
film cannot be the source of this radiation because
quartz has no such a luminescence band while being
0 10 20 30 40
0,8
0,9
1,0
1,1
1,2
1,3
1,4
1,5
2
1
20 2
K
, a
rb
. u
ni
t
Dose x 10 , particles/cm
192
bombarded by ions. This radiation cannot be
bremsstrahlung or transition one. In those cases the
optical constants in the given wavelength region must
be essentially changed, but it is not observed for silicon
[21]. Moreover, the generated radiation must have
approximately equal intensities both from rough and
polished samples. Taking into account the same reasons
we can say that this radiation cannot be induced by
interband transitions. Nevertheless we can propouse
some mechanism to explain the generation of this band.
Probably excitations are generated along the whole ion
track. These excitations can easily or with a small
attenuation spread in the sample. Reaching the surface
this excitation transforms into electromagnetic wave
observed by us. This statement is confirmed by two
facts. First, intensity is proportional to the ion
range length in the substance. Second, the light
yield in this band depends essentially on the surface
condition state: for a rough sample it is five times
higher than for a polished one.
4. Conclusion.
It was obtained that the ionluminescence spectra of
SiO2 were changed under proton bombardment
essentially. The relation between light intensity and
implantation dose was determined. The novel method
for control of proton dose in quartz was proposed.
Acknowledgements
The autors are grateful to the Member of National
Academy of Science of Ukraine V.Storighko for help.
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|
| id | nasplib_isofts_kiev_ua-123456789-81676 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-11-30T14:34:30Z |
| publishDate | 2000 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. 2015-05-19T08:46:51Z 2015-05-19T08:46:51Z 2000 The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/81676 533.9 The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light intensity and implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton dose in quartz was proposed. The autors are grateful to the Member of National Academy of Science of Ukraine V.Storighko for help. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Нерелятивистская плазменная элeктрoника The silica and silicon luminescence induced by fast hydrogen ions Article published earlier |
| spellingShingle | The silica and silicon luminescence induced by fast hydrogen ions Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. Нерелятивистская плазменная элeктрoника |
| title | The silica and silicon luminescence induced by fast hydrogen ions |
| title_full | The silica and silicon luminescence induced by fast hydrogen ions |
| title_fullStr | The silica and silicon luminescence induced by fast hydrogen ions |
| title_full_unstemmed | The silica and silicon luminescence induced by fast hydrogen ions |
| title_short | The silica and silicon luminescence induced by fast hydrogen ions |
| title_sort | silica and silicon luminescence induced by fast hydrogen ions |
| topic | Нерелятивистская плазменная элeктрoника |
| topic_facet | Нерелятивистская плазменная элeктрoника |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/81676 |
| work_keys_str_mv | AT kalantaryanov thesilicaandsiliconluminescenceinducedbyfasthydrogenions AT kononenkosi thesilicaandsiliconluminescenceinducedbyfasthydrogenions AT muratovvi thesilicaandsiliconluminescenceinducedbyfasthydrogenions AT kalantaryanov silicaandsiliconluminescenceinducedbyfasthydrogenions AT kononenkosi silicaandsiliconluminescenceinducedbyfasthydrogenions AT muratovvi silicaandsiliconluminescenceinducedbyfasthydrogenions |