Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors

Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors

The characteristics and radiation tolerance of a double-sided microstrip detector (DSMD) were studied, and the suitability of the detector to the ALICE experiment requirements was analyzed. The sensitive area of the silicon microstrip detector measures 40x75 mm. The DSMD consists of 750 registering...

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Бібліографічні деталі
Опубліковано в: :Вопросы атомной науки и техники
Дата:2000
Автори: de Haas, A.P., Kuijer, P., Kulibaba, V.I., Maslov, N.I., Perevertailo, V.L., Ovchinnik, V.D., Potin, S.M., Starodubtsev, A.F.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2000
Теми:
Experimental methods
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/82264
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors / A.P. de Haas, P. Kuijer, V.I. Kulibaba, N.I. Maslov, V.L. Perevertailo, V.D. Ovchinnik, S.M. Potin, A.F. Starodubtsev // Вопросы атомной науки и техники. — 2000. — № 2. — С. 26-33. — Бібліогр.: 11 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-82264
record_format dspace
spelling de Haas, A.P.
Kuijer, P.
Kulibaba, V.I.
Maslov, N.I.
Perevertailo, V.L.
Ovchinnik, V.D.
Potin, S.M.
Starodubtsev, A.F.
2015-05-27T11:50:12Z
2015-05-27T11:50:12Z
2000
Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors / A.P. de Haas, P. Kuijer, V.I. Kulibaba, N.I. Maslov, V.L. Perevertailo, V.D. Ovchinnik, S.M. Potin, A.F. Starodubtsev // Вопросы атомной науки и техники. — 2000. — № 2. — С. 26-33. — Бібліогр.: 11 назв. — англ.
1562-6016
PACS: 29.40.Wk
https://nasplib.isofts.kiev.ua/handle/123456789/82264
The characteristics and radiation tolerance of a double-sided microstrip detector (DSMD) were studied, and the suitability of the detector to the ALICE experiment requirements was analyzed. The sensitive area of the silicon microstrip detector measures 40x75 mm. The DSMD consists of 750 registering strips on each side. The strip pitch is 100 mm and the strip length is 40 mm. Strips of the p+-side were oriented parallel to the side edge, the n+-strips were placed at 30 mrad stereo angle with respect to p+-strips and were separated by a common p+-stop structure. Both p+- and n+-strips are biased by integrated polysilicon resistors with a resistance no less than 10 MOhm. The data readout is realized with use of 120 pF coupling capacitors. The radiation tolerance of the microstrip detector was studied using 20 MeV electrons. The leakage current increases from 2 up to 5 nA per one strip and the interstrip resistance decreases from 43 down to 30 GOhm after 10 krad irradiation dose. The other DSMD features remain unchanged under irradiation. To evaluate the detector efficiency, the yield of good coupling capacitors and biasing resistors, as well as strip leakage currents, interstrip resistance and interstrip capacitance were studied. Based on the data obtained, the number of defective strips is found not to exceed 3%; this provides the required detector efficiency of about 97%.
The authors are very thankful to many colleagues for the valuable discussions and constructive remarks, especially P. Giubellino and O. Runolfsson. This work was supported by INTAS under the Grant 96-0678.
en
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
Вопросы атомной науки и техники
Experimental methods
Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors
Характеристики и радиационная стойкость двустороннего микрострипового детектора с поликремниевыми резисторами смещения
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors
spellingShingle Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors
de Haas, A.P.
Kuijer, P.
Kulibaba, V.I.
Maslov, N.I.
Perevertailo, V.L.
Ovchinnik, V.D.
Potin, S.M.
Starodubtsev, A.F.
Experimental methods
title_short Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors
title_full Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors
title_fullStr Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors
title_full_unstemmed Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors
title_sort characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors
author de Haas, A.P.
Kuijer, P.
Kulibaba, V.I.
Maslov, N.I.
Perevertailo, V.L.
Ovchinnik, V.D.
Potin, S.M.
Starodubtsev, A.F.
author_facet de Haas, A.P.
Kuijer, P.
Kulibaba, V.I.
Maslov, N.I.
Perevertailo, V.L.
Ovchinnik, V.D.
Potin, S.M.
Starodubtsev, A.F.
topic Experimental methods
topic_facet Experimental methods
publishDate 2000
language English
container_title Вопросы атомной науки и техники
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
format Article
title_alt Характеристики и радиационная стойкость двустороннего микрострипового детектора с поликремниевыми резисторами смещения
description The characteristics and radiation tolerance of a double-sided microstrip detector (DSMD) were studied, and the suitability of the detector to the ALICE experiment requirements was analyzed. The sensitive area of the silicon microstrip detector measures 40x75 mm. The DSMD consists of 750 registering strips on each side. The strip pitch is 100 mm and the strip length is 40 mm. Strips of the p+-side were oriented parallel to the side edge, the n+-strips were placed at 30 mrad stereo angle with respect to p+-strips and were separated by a common p+-stop structure. Both p+- and n+-strips are biased by integrated polysilicon resistors with a resistance no less than 10 MOhm. The data readout is realized with use of 120 pF coupling capacitors. The radiation tolerance of the microstrip detector was studied using 20 MeV electrons. The leakage current increases from 2 up to 5 nA per one strip and the interstrip resistance decreases from 43 down to 30 GOhm after 10 krad irradiation dose. The other DSMD features remain unchanged under irradiation. To evaluate the detector efficiency, the yield of good coupling capacitors and biasing resistors, as well as strip leakage currents, interstrip resistance and interstrip capacitance were studied. Based on the data obtained, the number of defective strips is found not to exceed 3%; this provides the required detector efficiency of about 97%.
issn 1562-6016
url https://nasplib.isofts.kiev.ua/handle/123456789/82264
citation_txt Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors / A.P. de Haas, P. Kuijer, V.I. Kulibaba, N.I. Maslov, V.L. Perevertailo, V.D. Ovchinnik, S.M. Potin, A.F. Starodubtsev // Вопросы атомной науки и техники. — 2000. — № 2. — С. 26-33. — Бібліогр.: 11 назв. — англ.
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last_indexed 2025-11-30T14:02:45Z
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