Experimental research of ICP reactor for plasma-chemical etching

• Опубліковано в: : Вопросы атомной науки и техники
• Дата: 2006
• Автори: Dudin, S.V., Zykov, A.V., Dahov, A.N., Farenik, V.I.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2006
• Теми: Low temperature plasma and plasma technologies
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/82289
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Experimental research of ICP reactor for plasma-chemical etching / S.V. Dudin, A.V.Zykov, A.N.Dahov, V.I. Farenik // Вопросы атомной науки и техники. — 2006. — № 6. — С. 189-191. — Бібліогр.: 3 назв. — англ.

The results of systematic experimental researches of plasma-chemical etching reactor in the inductive mode are presented
 in this paper. Measurements of the integral discharge parameters (inductor voltage, gas pressure, input power)
 have been carried out as well as probe measurements of spatial distribution of local plasma parameters (plasma density,
 temperature and electron energy distribution function) and radial profiles of ion current to processed surface. The
 measured dependences differ essentially for atomic (Ar) and molecular (O₂,N₂,CF₄) gases. As the range of working
 pressure covers diffusive and collisionless modes of charged particles movement, radial distribution of ion current density
 and its absolute value change significantly. Comparison of the obtained results with the calculations executed using
 “Global” spatially averaged model and 2D-fluid model is carried out.