Investigation of thin films deposition into porous material

Although the direct contact of the treated material with the plasma is assumed by the plasma community as a
 necessary condition of successful plasma treatment, several references mention penetration of active species into the
 porous material. Hydrophylity enhancement has been obser...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Вопросы атомной науки и техники
Datum:2006
Hauptverfasser: Sedláková, L., Kolouch, A., Hladík, J., Spatenka, P.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2006
Schlagworte:
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/82307
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Investigation of thin films deposition into porous material / L. Sedláková, A. Kolouch, J. Hladík, P. Spatenka // Вопросы атомной науки и техники. — 2006. — № 6. — С. 207-209. — Бібліогр.: 6 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:Although the direct contact of the treated material with the plasma is assumed by the plasma community as a
 necessary condition of successful plasma treatment, several references mention penetration of active species into the
 porous material. Hydrophylity enhancement has been observed even inside porous material. The aim of this study is
 experimental investigation of plasma. This work is aimed to experimental investigation of thin layers deposition on
 porous substrates.
 The porous substrate was simulated with a specimen made from two glass wafers, on the margins of which two
 difference strips of varying thickness were placed. These strips define the thickness of the slot in the middle. After the
 deposition the substrate was decomposed and the film deposited inner walls of the glass wafers was investigated. Layers
 were deposited by method PECVD used RF plasma from gas C2H2. The film thickness was measured in dependence on
 the distance from the margin into the centre of the slab by optical profilometer. Penetration dept was tested in
 dependence on deposition conditions and geometric configuration of the substrate. Depending on deposition conditions,
 the film deposition was observed even on the whole substrate.
ISSN:1562-6016