Investigation of thin films deposition into porous material
Although the direct contact of the treated material with the plasma is assumed by the plasma community as a
 necessary condition of successful plasma treatment, several references mention penetration of active species into the
 porous material. Hydrophylity enhancement has been obser...
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| Date: | 2006 |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2006
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| Cite this: | Investigation of thin films deposition into porous material / L. Sedláková, A. Kolouch, J. Hladík, P. Spatenka // Вопросы атомной науки и техники. — 2006. — № 6. — С. 207-209. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860063960313626624 |
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| author | Sedláková, L. Kolouch, A. Hladík, J. Spatenka, P. |
| author_facet | Sedláková, L. Kolouch, A. Hladík, J. Spatenka, P. |
| citation_txt | Investigation of thin films deposition into porous material / L. Sedláková, A. Kolouch, J. Hladík, P. Spatenka // Вопросы атомной науки и техники. — 2006. — № 6. — С. 207-209. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | Although the direct contact of the treated material with the plasma is assumed by the plasma community as a
necessary condition of successful plasma treatment, several references mention penetration of active species into the
porous material. Hydrophylity enhancement has been observed even inside porous material. The aim of this study is
experimental investigation of plasma. This work is aimed to experimental investigation of thin layers deposition on
porous substrates.
The porous substrate was simulated with a specimen made from two glass wafers, on the margins of which two
difference strips of varying thickness were placed. These strips define the thickness of the slot in the middle. After the
deposition the substrate was decomposed and the film deposited inner walls of the glass wafers was investigated. Layers
were deposited by method PECVD used RF plasma from gas C2H2. The film thickness was measured in dependence on
the distance from the margin into the centre of the slab by optical profilometer. Penetration dept was tested in
dependence on deposition conditions and geometric configuration of the substrate. Depending on deposition conditions,
the film deposition was observed even on the whole substrate.
|
| first_indexed | 2025-12-07T17:06:03Z |
| format | Article |
| fulltext |
Problems of Atomic Science and Technology. 2006, 6. Series: Plasma Physics (12), p. 207-209 207
INVESTIGATION OF THIN FILMS DEPOSITION
INTO POROUS MATERIAL
L. Sedláková1, A. Kolouch1, J. Hladík1, P. patenka1,2
1 Technical University of Liberec, Department of Material Science,
Hálkova 6, 46017, Liberec, Czech Republic;
2 University of South Bohemia, Department of Physics,
Jeronýmova 10, 370 01 eské Bud jovice, Czech Republic
Although the direct contact of the treated material with the plasma is assumed by the plasma community as a
necessary condition of successful plasma treatment, several references mention penetration of active species into the
porous material. Hydrophylity enhancement has been observed even inside porous material. The aim of this study is
experimental investigation of plasma. This work is aimed to experimental investigation of thin layers deposition on
porous substrates.
The porous substrate was simulated with a specimen made from two glass wafers, on the margins of which two
difference strips of varying thickness were placed. These strips define the thickness of the slot in the middle. After the
deposition the substrate was decomposed and the film deposited inner walls of the glass wafers was investigated. Layers
were deposited by method PECVD used RF plasma from gas C2H2. The film thickness was measured in dependence on
the distance from the margin into the centre of the slab by optical profilometer. Penetration dept was tested in
dependence on deposition conditions and geometric configuration of the substrate. Depending on deposition conditions,
the film deposition was observed even on the whole substrate.
PACS: 52.77.Dq, 68.00.00
1. INTRODUCTION
By deposition on porous material overall coverage is
an important factor, i.e. penetration of active particles into
single pores of the substrate. SiO2 and TiO2 layers were
deposited on porous material (textile fabric) by method
sol-gel. Resulting layer was only on surface of the fabric
and material inside of binding points of fabric remained
untreated [1]. This undesirable effect could be avoided by
application of PECVD method. Owing to active particles
motion in plasma discharge is achieved more effective
penetration into porous substrates. This work is focused
on investigation of above mentioned methods and
processes of plasma treatment.
Penetration of plasma effects is subject of research at
many institutions. Many of the works are focused on
penetration of porous material plasma modification.
Measurement of penetration is carried out by many
various methods. Testing of penetration at powder
materials is based on wettability change of modified
material. Wettability of separate layers of modified
material is measured [2-4]. Testing of plasma effects
penetration into textile structures also uses wettability-
based method [5]. Other approach involves chemistry
detection of separate layers of treated fabric by ESCA
method [6].
2. EXPERIMENTAL
The low-pressure PECVD device was RF planar
reactor schematically shown in Fig. 1. The reactor
consists of a high-voltage electrode and a vertically
adjustable substrate holder. Distance between substrate
and RF electrode are 60 mm. The volume of the vessel
was about 125 l. The powered electrode was capacitive
coupled to the RF generator via a matching unit. The
applied power was up to 15 W with the frequency
13,56 MHz. The vessel was evacuated by pumping
system consisted of rotary oil pump and Root’s pump.
Ultimate pressure was below 1 Pa. Pressure during
deposition vas 2, 5, 8, 10 Pa. The pumping system was
protected by a cold trap cooled by liquid nitrogen. The
butterfly valve was used to reduce the pumping speed and
control the pressure. C2H2 was used as the working gas.
The gas was introduced into the reactor through the tube
positioned on the side of the reactor. The flow of the
working gas was controlled by mass-flow meter. Mass
flow of the working gas C2H2 was 10 sccm.
reaction chamber
matching unit
RF Generator
shielding
movable
substrate
holder
high-
voltage
electrode
mass-flow
meters
rotary oil
pump
roots
pump
butterfly
valve
cold trap
Fig. 1. Schematic diagram of the vacuum PECVD
deposition device
The porous substrate was simulated with a specimen
made from two glass wafers, on the margins of which two
difference strips of varying thickness were placed. These
strips define the thickness of the slot in the middle.
Thickness of difference strips 0,8; 1,6; 6; 10 mm was
used. Length of slot was 80 mm and width 8 mm. Fig. 3
shows the model substrate.
208
Fig. 2. Model substrate with defined slot
After the deposition the substrate was decomposed
and the film deposited inner walls of the glass wafers was
investigated. The resulting film thickness depending on a
distance from the slot opening was measured by means of
the optical profilometer. In addition to the model
substrate, reference sample without slot was deposited.
This reference sample was used for confrontation of
deposition process with and without slot.
3. RESULTS AND DISCUSSION
This paper is focused on testing of penetration depth
into defined slot. This slot was model for porous
substrate. Penetration depth was tested in dependence on
deposition conditions and geometric configuration of the
substrate. Thin film was ascertained in the whole length
of substrate.
Layers thickness at the opening of the slot was
measured in tenths micrometers. Towards the centre of
the substrate the layer thinned beneath measurable values.
The thickness was measured in defined intervals from
opening of the slot by optical profilometer. For greater
clarity and comparability is a relative thickness indicated.
The relative thickness determines ratio of layer thickness
measured in the slot and respective layer on plain sample
without the slot.
0
0,01
0,02
0,03
0,04
0,05
0,06
0,07
0,08
0,09
0 5 10 15 20
Distance from slot opening [mm]
re
la
tio
n
th
ic
kn
es
s
[-]
A
B
C
D
Fig. 3. Dependence of relative layer thickness on distance
from the opening of the slot for different size of slot.
Deposition pressure was 10 Pa
Fig 3 shows dependence of relative layer thickness on
distance from the opening of the slot. Dependence on
geometric configuration of the substrate is shown also on
the fig 3. Results for substrate with 0,8 mm slot high
describes line A. Line E is for 10 mm slot high.
According to presumption was highest penetration
ascertained on samples with bigger slot.
Fig. 4 depicts influence of pressure during deposition
process on active particle penetration. Highest penetration
was ascertained on samples deposited at pressure 10 Pa.
The layer was still measurable 14 mm from the slot
opening. The lowest penetration showed the sample
deposited at pressure 2 Pa. This sample's layer was
measurable only 6 mm from the slot opening.
This result supports presumption based on mean free
path of active particles. This mean free path lowers with
increasing pressure. Higher pressure causes higher
number of active particles collisions. Due of this effect,
some active particles can be bounced perpendicular in the
direction of the field activity between the electrode and
the substrate.
These active particles could form the layer in the
limited space of the slot.
0
0,05
0,1
0,15
0,2
0,25
0,3
0,35
0,4
0 5 10 15 20
Distance from slot opening [mm]
re
la
tio
n
th
ic
kn
es
s
[-
]
2 Pa
5 Pa
8 Pa
10 Pa
Fig.4. Dependence of relative layer thickness on distance
from the opening of the slot for different deposition
pressures. High of slot was 10 Pa
CONCLUSIONS
Most suitable deposition conditions in relation to
penetration of active praticles were tested. Complex form
substrate was simulated by glas substrate with the slot.
The deposition pressure is a distinctive factor influencing
the penetration into the limited space of the slot. Highest
penetration was ascertained on samples deposited at
pressure 10 Pa. The layer was still measurable 14 mm
from the slot opening. The lowest penetration showed the
sample deposited at pressure 2 Pa.
Mass of work gas and distance of substrate from
electrode could be next factors, which influence the
penetration. These parameters wil be further tested.
ACKNOWLEDGEMENT
This project was supported by the GACR, project No.
202/05/2242 and Centrum, project No. 1M0577
REFERENCES
1. P. Exnar, J. Wiener, E. Heydukova, V. Kovacic.
Inorganic modifications of fibres // International
conference Structure and structural mechanics of textiles,
Liberec, 2005, ISBN 80-7372-002-7, p. 281-289.
209
2. J. Hladik, A. Kolouch, M. Jodas, P. Spatenka. Plasma
treatment of a polyethylene powder - effect of plasma
penetration under the upper layer of the powder //
Symposium on Applications of Plasma Processes,
Podbanské, 2005, ISBN 80–223–2018-8, p. 169 – 170.
3. J. Hladik, M. Jodas, A. Kolouch, P. Spatenka.
Penetration of the active particles to the powder //
International Conference 4-th Nanodiamond and Related
materials jointly with 6-th Diamond and Related Films,
Lodz, 2005, ISBN 83-917309-5-6.
4. P. Spatenka, J. Hladik, A. Kolouch, A.Pfitzmann,
P.Knoth. Plasma Treatment of Polyethylene Powder -
Process and Application. 2005 Society of Vacuum
Coaters 505/856-7188 / 48th Annual Technical
Conference Proceedings (2005). ISSN 0737-5921,
p. 95-98.
5. H. U. Poll, U. Schladitz, S. Schreiter. Penetration of
plasma effects into textile structures // Surface and
Coatings Technology. 2001, p. 489 – 493.
6. E. Krensel, S. Fusselman, H. Yasuda, T. Yasuda,
M. Miyama. Penetration of plasma surface modification.
II. CF4 and C2F4 low-temperature cascade arc torch//
Journal of Polymer Science part Polymer Chemistry.
1994, v. 32, p. 1839-1845.
L. Sedláková, A. Kolouch, J. Hladík, P. patenka
,
,
.
. –
.
,
. .
,
. PECVD C2H2.
.
.
.
L. Sedláková, A. Kolouch, J. Hladík, P. patenka
,
,
.
. –
.
,
. .
, .
PECVD C2H2.
.
.
.
|
| id | nasplib_isofts_kiev_ua-123456789-82307 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T17:06:03Z |
| publishDate | 2006 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Sedláková, L. Kolouch, A. Hladík, J. Spatenka, P. 2015-05-27T15:27:07Z 2015-05-27T15:27:07Z 2006 Investigation of thin films deposition into porous material / L. Sedláková, A. Kolouch, J. Hladík, P. Spatenka // Вопросы атомной науки и техники. — 2006. — № 6. — С. 207-209. — Бібліогр.: 6 назв. — англ. 1562-6016 PACS: 52.77.Dq, 68.00.00 https://nasplib.isofts.kiev.ua/handle/123456789/82307 Although the direct contact of the treated material with the plasma is assumed by the plasma community as a
 necessary condition of successful plasma treatment, several references mention penetration of active species into the
 porous material. Hydrophylity enhancement has been observed even inside porous material. The aim of this study is
 experimental investigation of plasma. This work is aimed to experimental investigation of thin layers deposition on
 porous substrates.
 The porous substrate was simulated with a specimen made from two glass wafers, on the margins of which two
 difference strips of varying thickness were placed. These strips define the thickness of the slot in the middle. After the
 deposition the substrate was decomposed and the film deposited inner walls of the glass wafers was investigated. Layers
 were deposited by method PECVD used RF plasma from gas C2H2. The film thickness was measured in dependence on
 the distance from the margin into the centre of the slab by optical profilometer. Penetration dept was tested in
 dependence on deposition conditions and geometric configuration of the substrate. Depending on deposition conditions,
 the film deposition was observed even on the whole substrate. This project was supported by the GACR, project No.
 202/05/2242 and Centrum, project No. 1M0577 en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Low temperature plasma and plasma technologies Investigation of thin films deposition into porous material Article published earlier |
| spellingShingle | Investigation of thin films deposition into porous material Sedláková, L. Kolouch, A. Hladík, J. Spatenka, P. Low temperature plasma and plasma technologies |
| title | Investigation of thin films deposition into porous material |
| title_full | Investigation of thin films deposition into porous material |
| title_fullStr | Investigation of thin films deposition into porous material |
| title_full_unstemmed | Investigation of thin films deposition into porous material |
| title_short | Investigation of thin films deposition into porous material |
| title_sort | investigation of thin films deposition into porous material |
| topic | Low temperature plasma and plasma technologies |
| topic_facet | Low temperature plasma and plasma technologies |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/82307 |
| work_keys_str_mv | AT sedlakoval investigationofthinfilmsdepositionintoporousmaterial AT koloucha investigationofthinfilmsdepositionintoporousmaterial AT hladikj investigationofthinfilmsdepositionintoporousmaterial AT spatenkap investigationofthinfilmsdepositionintoporousmaterial |