Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma
Synthesis of Ti-Si and Ti-Si-N coatings using a filtered vacuum-arc plasma source with consumable titaniumsilicon cathode was investigated. The thickness of films and their elemental composition were defined by means of the X-ray fluorescent analysis. It has been established, that the silicon conc...
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| Veröffentlicht in: | Вопросы атомной науки и техники |
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| Datum: | 2009 |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2009
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| Zitieren: | Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma / D.S. Aksyonov, I.I. Aksenov, A.A. Luchaninov, E.N. Reshetnyak, V.E. Strel’nitskij // Вопросы атомной науки и техники. — 2009. — № 6. — С. 268-272. — Бібліогр.: 4 назв. — рос. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859632863006162944 |
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| author | Aksyonov, D.S. Aksenov, I.I. Luchaninov, A.A. Reshetnyak, E.N. Strel’nitskij, V.E. |
| author_facet | Aksyonov, D.S. Aksenov, I.I. Luchaninov, A.A. Reshetnyak, E.N. Strel’nitskij, V.E. |
| citation_txt | Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma / D.S. Aksyonov, I.I. Aksenov, A.A. Luchaninov, E.N. Reshetnyak, V.E. Strel’nitskij // Вопросы атомной науки и техники. — 2009. — № 6. — С. 268-272. — Бібліогр.: 4 назв. — рос. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | Synthesis of Ti-Si and Ti-Si-N coatings using a filtered vacuum-arc plasma source with consumable titaniumsilicon
cathode was investigated. The thickness of films and their elemental composition were defined by means of
the X-ray fluorescent analysis. It has been established, that the silicon concentration in coating can be changed over
a wide range, from zero to the maximum value defined by silicon content in the cathode, by adjustment deposition
process parameters – working gas pressure, substrate negative bias voltage, magnetic field intensity and its spatial
distribution.
Досліджено процес синтезу Ti-Si- та Ti-Si-N–покриттів з використанням джерела фільтрованої вакуумно-
дугової плазми з титан-силіцієвим катодом, що витрачається. Товщина плівок та їх елементний склад
визначались рентгенофлуоресцентним методом. Установлено, що концентрація силіцію в покритті може
змінюватись в широкому діапазоні, від нуля до максимальної величини, що визначається вмістом силіцію в
катоді, шляхом регулювання параметрів процесу – тиску робочого газу, негативної напруги зміщення на
підкладці, напруженості та просторового розподілу магнітних полів.
Исследован процесс синтеза Ti-Si- и Ti-Si-N–покрытий с использованием источника фильтрованной
вакуумно-дуговой плазмы с титан-кремниевым катодом. Толщина плёнок и их элементный состав
определялись рентгенофлуоресцентным методом. Установлено, что концентрация кремния в покрытии
может быть изменена в широких пределах, от нуля до максимальной величины, определяемому
содержанием кремния в катоде, путём регулировки параметров процесса осаждения – давления рабочего
газа, отрицательного напряжения смещения на подложке, напряжённости и пространственного
распределения магнитных полей.
|
| first_indexed | 2025-12-07T13:12:33Z |
| format | Article |
| fulltext |
УДК 621.793
SYNTHESIS OF Ti-Si AND Ti-Si-N COATINGS BY CONDENSATION
OF FILTERED VACUUM-ARC PLASMA
D.S. Aksyonov, I.I. Aksenov, A.A. Luchaninov, E.N. Reshetnyak, V.E. Strel’nitskij
National Science Centre "Kharkov Institute of Physics and Technology",
Kharkov, Ukraine
Synthesis of Ti-Si and Ti-Si-N coatings using a filtered vacuum-arc plasma source with consumable titanium-
silicon cathode was investigated. The thickness of films and their elemental composition were defined by means of
the X-ray fluorescent analysis. It has been established, that the silicon concentration in coating can be changed over
a wide range, from zero to the maximum value defined by silicon content in the cathode, by adjustment deposition
process parameters – working gas pressure, substrate negative bias voltage, magnetic field intensity and its spatial
distribution.
INTRODUCTION
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2009. №6.
Серия: Вакуум, чистые материалы, сверхпроводники (18), с. 268-272.
The synthesis of the Ti-Si-N composite films with
hardness above 40 GPa is one of the most significant
achievements in the field of functional thin coatings
production. The remarkable properties of coatings made
of this material can be attributed to peculiarities of their
structure: nanodimensional crystallites of titanium
nitride are embedded in the amorphous silicon nitride
matrix. These coatings have high mechanical and
tribotechnical characteristics that are retained at high
temperatures. In some cases, this quality makes them
irreplaceable when used on cutting tools.
One of the promising methods of said composite
material synthesis is the vacuum-arc one. Since the
sputtering of silicon by vacuum-arc is rather
problematical, the following technique is used. Cathode
is made of electrically conductive material which
consists of titanium and silicon in the needed
proportion. Cathode sputtering products in the form of
plasma flux are directed onto the substrate. If they are
being condensed in vacuum or argon presence, a Ti-Si
film is being formed, if in nitrogen medium – a Ti-Si-N
film is being deposited. However, there are no currently
published data related to the formation of filtered
(without macroparticles – droplets or/and solid
fragments of the cathode material) plasma fluxes
generated by vacuum-arc discharge with titanium-
silicon cathode and to the Ti-Si and Ti-Si-N films
synthesis by condensation of those fluxes.
This work studies some features of the said films
deposition using a dual vacuum-arc plasma source
whith a T-shaped two-channel magnetic filter.
1. EXPERIMENTAL DETAILS
Deposition of Ti-Si and Ti-Si-N films was
performed in a laboratory apparatus which contain a
two-channel vacuum-arc plasma flux formation system
having a T-shaped plasma filter. Structure and operation
principle of this system in detail was described
previously [1]. In this research we used its single-
cathode variant schematically shown in Fig. 1. Only one
input channel of the filter was currently active (right in
Fig. 1). Other channel had no plasma source: its anode
was closed by a flange having a current lead with a
collector 6 instead of cathode. The distance z1 between
the substrate holder 7 and the plasma duct outlet in most
experiments was + 25 mm until explicitly noted.
Substrate position inside plasma duct is marked with a
minus sign. The distance z2 between the collector and
the plasma duct outlet 3 axis was 140 mm. Magnetic
coils of the passive channel (left) in all experiments
were turned off (except specified in the text), so this
channel was used only as a trap for macroparticles.. The
values and directions of currents in the coils for three
operating modes (a, b and c) are given in Table. Coil
currents generating magnetic field opposite to other
coils, were marked with a minus sign.
A titanium-silicon alloy was used as a cathode
material; silicon content in it was 5 wt.%. The coatings
were deposited on polished molybdenum samples
20×17×0.3 mm in size. Two such samples were placed
on the substrate holder 7 with a 5 mm gap. Data
obtained from these two samples were averaged. In
some experiments a third sample was placed on the
Current modes of system coils
Current, А Mode IS IA21 IA22 IF2 IF3 IF4
a 1,5 − 0,4 0,5 2,0 4,0 3,0
b 1,5 − 0,4 0,5 2,0 4,0 − 3,0
c 1,5 0,4 0,5 2,0 4,0 3,0
Fig. 1. Filtered vacuum-arc plasma source:
1,2 and 3 − input and output sections of the T-shaped
plasma duct respectively; 4 – anode; 5 − cathode unit
case; 6 – collector; 7 − substrate holder; 8 – cathode;
S2 − stabilizing coil, A21, A22, A11, A12,
F1 − F4 − plasma guiding coils
268
collector 6. Film deposition rate and composition radial
distributions investigation was carried out using the
substrate holder having 9 samples. The samples were
arranged in one horizontal row with a 20 mm pitch.
The chamber was evacuated to the residual pressure
of 2·10−5 Torr before introducing working gas (Ar, N2)
in it. The nitrogen pressure PN was maintained at the
assigned level with the aid of an automatic inlet valve.
Film deposition was performed using a floating
potential on the substrates. For a qualitative evaluation
of higher negative bias Us effect on the film deposition
rate and its elemental composition, deposition was made
at Us = − 100 V. The arc current Ia in all experiments
was 100 A.
Thickness of coatings and their silicon content were
determined by X-ray fluorescent analysis using SPRUT
spectrometer, manufactured by "UkrRentgen" company.
2. RESULTS AND DISCUSSION
Fig. 2 and 3 show relationship between film
deposition rate v and its silicon content CSi versus argon
PAr and nitrogen PN pressures in the working chamber.
These curves were obtained with coils power supply in
mode "a" (see Table). From these figures one can
observe similarity in nature between the relations v(PAr)
and CSi(PAr) and the relations v(PN) and CSi(PN) at
floating substrate potential. The deposition rate in both
cases declines monotonously with increasing pressure.
Silicon concentration in the condensate deposited at low
pressure (less then 10−4 Torr) is fractions of one percent.
But it rises rapidly with pressure increase and after
reaching its maximum value has no significant changes
with further pressure growth. This nature of
relationships can be interpreted as follows. Low content
of silicon in the coatings, which is characteristic of the
left-hand branch of the curves CSi(PAr) and CSi(PN), may
be a result of the sputtering processes taking place
during the deposition of Ti-Si condensate. It is expected
that in case of the titanium-silicon vacuum arc plasmas
the sputtering process should be relatively intense, even
at such substrate bias potentials that are close to the
floating one, what is deduced from the following. The
energy ЕіZ of ion interacting with the substrate is
determined, mainly, by three terms:
ЕіZ = ЕіZ,0 + ZeUs + EiZ,p,
where ЕіZ,0 − ion energy when it leaves zone of its
origin (near the cathode spot); Z − multiplicity of
ionization; е − elementary charge; Us − substrate
potential (in this case it is floating); EiZ,p − the potential
energy (energy consumed for Z-fold ionization of
atom). By substituting the values of the right hand of the
said equality which are characteristic of single-, double-
and triple-charged ions of titanium [2], we obtain the
following values of energies: Еі1 = 114 eV, Еі2 = 190 eV
and Еі3 = 260 eV for substrate-incident ions of Ti1+, Ti2+
and Ti3+, respectively. Those kinds of energy values
highly exceed the condensate sputtering threshold (for
metals this threshold is about 20 … 30 eV [3]).
Assuming that silicon sputtering coefficient induced
by titanium (and other) ions, is higher than the
coefficient of titanium self-sputtering, it is expected that
the silicon concentration in the condensate should be
much lower as compared to its value for the cathode
material, what is observable in the left-hand branch of
the curves CSi(PAr) and CSi(PN) in Fig. 2 and 3,a. It can
also be assumed that the interaction cross-section of
silicon ions with gas particles is lower than titanium
ions one. Titanium ions are heavier and have a higher
mean charge than silicon ones, which means that silicon
flux component is less dissipated. In this case one can
expect increase of silicon content in the coating with gas
pressure growth. This happens due to decrease in
titanium/silicon ions ratio, which have came to
substrate. Moreover it should lead to noticeable
deposition rate drop. The assumption is confirmed by
the appropriate curves in Fig. 2 and 3,a. It also follows
from these figures that the coating concentration of
silicon attains higher values during its deposition in
nitrogen than in argon. This may be explained by
preferential silicon sputtering which in case of argon
Fig. 2. Deposition rate and silicon concentration
against argon pressure. Additive polarity
of the coil F4 (mode "a")
Fig. 4. Deposition rate and silicon concentration
against distance between substrate
and the plasma duct output
Fig. 3. Deposition rate and silicon concentration
against nitrogen pressure at substrate bias of − 100 V,
and at floating potential for additive (a)
and subtractive (b) polarity of the coil F4
a
b
269
presence is more intensive owing to a high sputtering
ability of argon ions [3].
At Us = − 100 V coating silicon content did not
exceed 1% in entire nitrogen pressure range. However,
the curve v(PN) for this case coincides with the one
obtained at the floating potential of the substrate
(Fig. 3,a). A steep decrease in CSi with the increasing
negative substrate potential can be attributed to
enhanced role of titanium ions in the preferential silicon
sputtering.
The nature of v(PAr) and v(PN) dependencies, as
shown in Fig. 2 and 3,a, is typical for plasma sources
with magnetic guiding of plasma fluxes: the deposition
rate decreases with increasing gas pressure due to
plasma flux particles scattering on gas target [4].
Fig. 3,b demonstrates change in v(PN) induced by
current polarity change in the output plasma guide coil
(mode "b"). The opposite current in the output coil
causes creation of cusp-shaped magnetic field [1]. It
follows from this figure that with such field geometry at
the system output, deposition rate and silicon content
are nitrogen pressure independent. In field of this shape
the energy of ions, that sputter the film, decreases [4].
Moreover, the film re-sputtering from the plasma duct
walls in the vicinity of the magnetic gap can be feasible.
Silicon, being preferentially sputtered (see above),
moves toward the substrate in form of neutral vapour,
insensitive to electromagnetic fields. This is indicated
by the weak dependence of CSi on z1 found in the
vicinity of the plasma guide output section (Fig. 4). An
observable tendency toward silicon concentration
enhancement away from the system output can be
attributed to decreasing density of titanium flow
arriving to the substrate which, being completely
ionized, follows the divergent bundle of the magnetic
force lines [4].
a
b
It should be noted, that silicon content in coating
deposited on collector substrate varies from 3 to 4 wt.%
within the said nitrogen pressure range. Neutral vapour
and macroparticles emitted by the cathode can freely
reach the collector. And since they make the main part
of the film total mass and have the same composition as
a cathode, it leads to such weak dependency of CSi on
PN.
Fig. 5. Deposition rate and silicon concentration
against anode coil А21 current at nitrogen pressure
0,6 mTorr (a), and 3 mTorr (b); mode "a"
Fig. 5 shows the relationships of deposition rate and
film silicon contamination versus magnitude and
direction of anode coil (A21) current. Negative current
values correspond to the contrary direction of the
currents as compared to the rest coils currents. The plot
indicates a strong influence of magnetic field
topography in the anode region on deposition rate and
silicon content. In particular, at PN = 3 mTorr, with the
variations of the current IA21 ranging from − 0,4 to
+ 0,4 А, the coating silicon concentration falls off
monotonously from its maximum value ~ 3 wt.% to
zero. Mechanisms responsible for the nature of the
above relationships are not yet clear.
Fig. 6 shows radial distribution curves of silicon
concentration and deposition rate at the plasma guide
output against argon pressure. It follows from the Figure
that film silicon concentration grows along with gas
pressure, while deposition rate becomes lower. This
agrees well with above data (Fig. 2). Additive coil F4
Fig. 6. Radial distribution of silicon concentration (a)
and deposition rate (b) for argon; mode "a"
a
b
a
b
Fig. 7. Radial distribution of silicon concentration (a)
and deposition rate (b) for argon; mode "b"
270
a
b
a
b
polarity leads to focusing both, silicon and titanium ion
fluxes. Their spatial distributions have similar form –
humped form. So component ratio remains nearly
unchanged, that leads to good silicon homogeneity.
Deposition rate, on the contrary, has said humped
profile due to ions flux focusing. Energizing of the
output coil F4 according to the mode "b" (Fig. 7)
changes components ion fluxes distributions. However,
it affects components in a different way due to
component ion mass and charge state differences.
Titanium ion flux remains more humped then silicon
one. And, as we can see from Fig. 7,a, silicon content
has lower values near the substrate center. Silicon
concentration lowering may be also the result of its
preferential sputtering by titanium ions which flux
intensity is much higher near the substrate center (see
above). The nature of deposition rate curves in Fig. 7,b
remains the same as in Fig. 6,b. The only sufficient
difference is mean deposition rate drop due to loses in
cusp-shaped magnetic field.
Radial distribution curves of silicon concentration
and coating deposition rate in nitrogen are shown in
Fig.8 and 9. The behavior of the curves is actually the
same as for argon, although there are certain variations
in the absolute values of the measured parameters.
Measurement results of CSi(PN) and v(PN) made for
mode "c" are shown in Fig. 8 as dashed lines.
Deposition rate under those conditions was
approximately two times lower with the silicon
concentration drop almost to zero.
Returning to Fig. 6, note that condensate maximum
deposition rate is shifted to the left, unlike other
Figures. The shift took place when coil F1 was turned
on (with 0.4 A current). It was done to clarify the
possibility of correcting flux radial displacement., which
was found to be successful.
The results of the measurements indicate that the
nature of CSi and v dependences on gas pressure at the
system axis in all cases do not contradict the
assumptions made while discussing the results shown in
Fig. 2 through 5. It is hard to do any unambiguous
conclusion about CSi and v radial distributions formation
mechanisms due to large quantity of interrelated factors
affecting final result. It can be gas type, its density and
ionization level, ion charge and energy spatial
distributions, film sputtering intensity. The influence
degree of majority of those factors on film formation
process for vacuum-arc technological systems that are
less complicated than described here is still unknown.
Further, more detailed studies are required in order to
establish the nature of the mechanisms that responsible
for the relationships obtained and to confirm (or refute)
the assumptions and suppositions made when
interpreting the results of the experiments.
3. CONCLUSIONS
The results presented in this work point out the
feasibility of using the vacuum-arc technique to deposit
composite coatings based on Ti and Si by condensing
the filtered plasma of the vacuum-arc discharge from
the titanium-silicon cathode. It has been demonstrated
that the coating deposition rate and components ratio in
the condensate can be adjusted within wide range by
changing of gas medium density (pressure), substrate
bias, intensity and distribution geometry of magnetic
field in the system.
It has been found that further study of deposition
process parameters are needed in order to determine
their influence on physical and functional properties of
the coatings.
Fig. 8. Radial distribution of silicon concentration (a)
and deposition rate (b) for nitrogen
c
Fig. 9. Radial distribution of silicon concentration (a),
deposition rate (b), and silicon line intensity (c)
for nitrogen; mode "b"
271
REFERENCES
3. L.I. Mycell. Thin film deposition by cathodic
sputtering // Physics of Thin Films / edit. G. Hass and
R.E. Tun. Moscow: "Mir", 1968, p.59 − 134 (in Rus.).
1. I.I. Aksenov, D.S. Aksyonov, V.V. Vasilyev,
A.A. Luchaninov, E.N. Reshetnyak, V.E. Strel’nitskij.
Filtered Vacuum Arc Plasma Source for Composite
Coatings Deposition. // Proc. ISDEIV-2008. Bucharest,
D1-001, p.567 − 570.
4. I.I. Aksenov. Vacuum arc in erosion plasma
sources. Kharkov: NSC-KIPT, 2005, 212 p. (in Rus.).
2. A. Anders. Atomic scale heating in cathodic arc
plasma deposition // Appl. Phys. Let. 2002, v. 80,
p. 1100 − 1102.
Статья поступила в редакцию 20.10.2009 г.
СИНТЕЗ Ti-Si- и Ti-Si-N-ПОКРЫТИЙ КОНДЕНСАЦИЕЙ ФИЛЬТРОВАННОЙ
ВАКУУМНО-ДУГОВОЙ ПЛАЗМЫ
Д.С. Аксёнов, И.И. Аксёнов, А.А. Лучанинов, Е.Н. Решетняк, В.Е. Стрельницкий
Исследован процесс синтеза Ti-Si- и Ti-Si-N–покрытий с использованием источника фильтрованной
вакуумно-дуговой плазмы с титан-кремниевым катодом. Толщина плёнок и их элементный состав
определялись рентгенофлуоресцентным методом. Установлено, что концентрация кремния в покрытии
может быть изменена в широких пределах, от нуля до максимальной величины, определяемому
содержанием кремния в катоде, путём регулировки параметров процесса осаждения – давления рабочего
газа, отрицательного напряжения смещения на подложке, напряжённости и пространственного
распределения магнитных полей.
СИНТЕЗ Ti-Si- ТА Tі-Si-N–ПОКРИТТІВ КОНДЕНСАЦІЄЮ ФІЛЬТРОВАНОЇ
ВАКУУМНО-ДУГОВОЇ ПЛАЗМИ
Д.С. Аксьонов, І.І. Аксьонов, О.А. Лучанінов, О.М. Решетняк, В.Є. Стрельницький
Досліджено процес синтезу Ti-Si- та Ti-Si-N–покриттів з використанням джерела фільтрованої вакуумно-
дугової плазми з титан-силіцієвим катодом, що витрачається. Товщина плівок та їх елементний склад
визначались рентгенофлуоресцентним методом. Установлено, що концентрація силіцію в покритті може
змінюватись в широкому діапазоні, від нуля до максимальної величини, що визначається вмістом силіцію в
катоді, шляхом регулювання параметрів процесу – тиску робочого газу, негативної напруги зміщення на
підкладці, напруженості та просторового розподілу магнітних полів.
272
|
| id | nasplib_isofts_kiev_ua-123456789-90791 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T13:12:33Z |
| publishDate | 2009 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Aksyonov, D.S. Aksenov, I.I. Luchaninov, A.A. Reshetnyak, E.N. Strel’nitskij, V.E. 2016-01-04T15:28:35Z 2016-01-04T15:28:35Z 2009 Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma / D.S. Aksyonov, I.I. Aksenov, A.A. Luchaninov, E.N. Reshetnyak, V.E. Strel’nitskij // Вопросы атомной науки и техники. — 2009. — № 6. — С. 268-272. — Бібліогр.: 4 назв. — рос. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/90791 621.793 Synthesis of Ti-Si and Ti-Si-N coatings using a filtered vacuum-arc plasma source with consumable titaniumsilicon cathode was investigated. The thickness of films and their elemental composition were defined by means of the X-ray fluorescent analysis. It has been established, that the silicon concentration in coating can be changed over a wide range, from zero to the maximum value defined by silicon content in the cathode, by adjustment deposition process parameters – working gas pressure, substrate negative bias voltage, magnetic field intensity and its spatial distribution. Досліджено процес синтезу Ti-Si- та Ti-Si-N–покриттів з використанням джерела фільтрованої вакуумно- дугової плазми з титан-силіцієвим катодом, що витрачається. Товщина плівок та їх елементний склад визначались рентгенофлуоресцентним методом. Установлено, що концентрація силіцію в покритті може змінюватись в широкому діапазоні, від нуля до максимальної величини, що визначається вмістом силіцію в катоді, шляхом регулювання параметрів процесу – тиску робочого газу, негативної напруги зміщення на підкладці, напруженості та просторового розподілу магнітних полів. Исследован процесс синтеза Ti-Si- и Ti-Si-N–покрытий с использованием источника фильтрованной вакуумно-дуговой плазмы с титан-кремниевым катодом. Толщина плёнок и их элементный состав определялись рентгенофлуоресцентным методом. Установлено, что концентрация кремния в покрытии может быть изменена в широких пределах, от нуля до максимальной величины, определяемому содержанием кремния в катоде, путём регулировки параметров процесса осаждения – давления рабочего газа, отрицательного напряжения смещения на подложке, напряжённости и пространственного распределения магнитных полей. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Физика и технология конструкционных материалов Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma Синтез Ti-Si- та Tі-Si-N–покриттів конденсацією фільтрованої вакуумно-дугової плазми Синтез Ti-Si- и Ti-Si-N-покрытий конденсацией фильтрованной вакуумно-дуговой плазмы Article published earlier |
| spellingShingle | Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma Aksyonov, D.S. Aksenov, I.I. Luchaninov, A.A. Reshetnyak, E.N. Strel’nitskij, V.E. Физика и технология конструкционных материалов |
| title | Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma |
| title_alt | Синтез Ti-Si- та Tі-Si-N–покриттів конденсацією фільтрованої вакуумно-дугової плазми Синтез Ti-Si- и Ti-Si-N-покрытий конденсацией фильтрованной вакуумно-дуговой плазмы |
| title_full | Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma |
| title_fullStr | Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma |
| title_full_unstemmed | Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma |
| title_short | Synthesis of Ti-Si and Ti-Si-N coatings by condensation of filtered vacuum-arc plasma |
| title_sort | synthesis of ti-si and ti-si-n coatings by condensation of filtered vacuum-arc plasma |
| topic | Физика и технология конструкционных материалов |
| topic_facet | Физика и технология конструкционных материалов |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/90791 |
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