IAP accelerator based facility for simulation and studies of radiation induced defects in materials
Report presents the programme and status of the works conducting at IAP NASU on the creation of the nanoanalytical center based on the electrostatic accelerators. The main purpose of the center is to investigate structure and composition of the reactor materials as well as to validate computer mo...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2009
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| Zitieren: | IAP accelerator based facility for simulation and studies of radiation induced defects in materials / V.Yu. Storizhko // Вопросы атомной науки и техники. — 2009. — № 4. — С. 17-28. — Бібліогр.: 13 назв. — англ. |
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| citation_txt | IAP accelerator based facility for simulation and studies of radiation induced defects in materials / V.Yu. Storizhko // Вопросы атомной науки и техники. — 2009. — № 4. — С. 17-28. — Бібліогр.: 13 назв. — англ. |
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| container_title | Вопросы атомной науки и техники |
| description | Report presents the programme and status of the works conducting at IAP NASU on the
creation of the nanoanalytical center based on the electrostatic accelerators. The main purpose of
the center is to investigate structure and composition of the reactor materials as well as to
validate computer modeling of the radiation defects.
Представлено програму та стан робіт, що проводяться в Інституті прикладної фізики по створенню наноаналітичного центру з використанням електростатичних прискорювачів. Головною метою центру є вивчення структури та складу реакторних матеріалів, а також комп’ютерне моделювання радіаційних дефектів.
Представлены программа и состояние работ, проводимых в Институте прикладной физики по созданию наноаналитического центра с использованием электростатических ускорителей. Главной целью центра является исследование структуры и состава реакторных материалов, а также компьютерное моделирование радиационных дефектов.
|
| first_indexed | 2025-11-30T17:30:00Z |
| format | Article |
| fulltext |
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2009. №4-1.
Серия: Физика радиационных повреждений и радиационное материаловедение (94), с. 17-28. 17
IAP ACCELERATOR BASED FACILITY FOR SIMULATION
AND STUDIES OF RADIATION INDUCED DEFECTS IN
MATERIALS
V.Yu. Storizhko
Institute of Applied Physics, National Academy of Sciences of Ukraine
E-mail: director@ipfcentr.sumy.ua
Report presents the programme and status of the works conducting at IAP NASU on the
creation of the nanoanalytical center based on the electrostatic accelerators. The main purpose of
the center is to investigate structure and composition of the reactor materials as well as to
validate computer modeling of the radiation defects.
1. INTRODUCTION
Due to the necessity to shorten a long cycle
of the new reactor material development novel
fields of the MeV energy accelerators
application appear. These accelerators are used
for simulation of the radiation defects
accumulation, hydrogen and helium content in
the reactor materials. This allows to reduce
significantly material test time and to select
the most perspective materials for intrareactor
tests. The second field of the MeV accelerator
application is validation of the modern
potentials and different empirical parameters
used while computer modelling of the material
radiation damages (ab-initio, molecular
dynamics, Monte-Carlo etc.). Precision
electrostatic accelerators and well-proven
nuclear methods open possibilities for
mentioned investigations and supplement
possibilities of the synchrotron radiation
sources and SNS facilities while their
considerably smaller cost and affordability for
the research institutes and universities. High
resolution is of great importance for
measurements of impurity distribution and
damages 3D profiles in the materials. To date
available resolution over surface is of 0.1 μm
and depth resolution is of nanometre values.
Existing photon and neutron sources are far to
reach these possibilities.
Research work done at the Institute of
Applied Physics of the National Academy of
Sciences of Ukraine (IAP) includes the
development of electrostatic accelerators for
the simulation of the radiation damage and 3D
characterization of the reactor materials
structure and composition. IAP laboratories
are well-equipped with different
instrumentations and support services for the
investigation of all aspects of the composition,
microstructure and defect properties of reactor
materials. 2 MV electrostatic accelerator is a
facility dedicated to ion microanalysis of
materials from atomic to microscopic levels.
Some capabilities of this instrument include:
Particle Induced X-ray Emission, Rutherford
Back Scattering, Rutherford Forward
Scattering, Nuclear Reaction Analysis,
Scanning Ion Microanalysis, Ion
Luminescence Spectroscopy. Different
analytical instruments are also available: Laser
Mass-Spectrometer with position sensitive
detector, Cf252 Desorbtion Mass Spectrometer,
Mass Spectrometer with soft ionization,
Atomic Absorption Spectrometer and others.
The laboratory for ion implantation
research is equipped with a high-current ion
implanter with replaceable ion sources capable
of operating at 150 kV. This instrument is used
for high dose ion implantation and
modification of surface layers of solid
samples. Presently this team is busy with the
design and construction of a high-current
(I~50 mA) H+/H-ion source and a cluster
source.
Now we have started to assemble the AMS-
4130 Accelerator Mass Spectrometer
purchased from the HVEE company and
intended for isotope mass analysis. Our
working schedule for 2009-2010 includes the
construction of another electrostatic
accelerator to produce electron/positron/ion
beams of energies approaching 6 MV which
are to be used in both microanalyses and
simulations of radiation damage at ultralow
temperatures.
mailto:director@ipfcentr.sumy.ua
2. NUCLEAR MICROANALYTICAL
TECHNIQUES WITH HIGH
LATERAL AND DEPTH
RESOLUTIONS
Laboratories engaged in reactor materials
research require instrumentation capable of
providing full microscopic information on the
test material under identical experimental
conditions. Typically, this information
concerns crystal structure, grain size analysis,
morphological and crystallographic texture,
impurity atom depth profiles, type of chemical
bond, electronic structure, impurity lattice and
surface location, defect depth profiles, internal
magnetic and electrostatic fields, etc.
The analytical equipment available at IAP
permits one to combine several techniques in a
single instrument, extract quantitative
information, avoid contamination and
destruction of samples.
A great variety of nuclear analytical
techniques include those which utilize
energetic ion beams and provide high lateral
resolution. Thus, neutron- or gamma-
activation which is now in widespread use has
very high sensitivity (10-12 to 10-13 g) and is
also applied to microanalysis. As a rule,
however, high accuracy can be achieved with
these techniques by means of radiochemical
separation, which makes them unsuitable for
fast multielemental analysis. The measurement
of the depth profile using neutron or gamma
activation is rather time-consuming and has
uncertainties connected with the distribution of
recoil atoms. The advantages of activation
techniques are clearly seen in the analysis of
the impurity content in the bulk of material
where low detection limits (10-10 at.%) place
them in the highest imposition in the
competition with other methods.
Microanalysis with ion beams has increasingly
more applications to measurements of the
surface impurity concentration. The basic
advantages of these techniques are high
accuracy reaching 1 to 3%, good lateral
resolution (~0,l μm) and depth resolution
(~nm) (Tabl. 1). High depth resolution allows
nondestructive measurement of depth profiles.
Nuclear microanalytical techniques based on a
strict quantitative theory of scattering and
nuclear reactions, generally do not require
reference standards while in practice it is
useful to employ standards to simplify
measurements (especially in PIXE). These
techniques are nondestructive and capable of
identifying every element with as low
detection limit as 10-6 at.%. The thickness of
the layers examined depends on the ion energy
and can be several μm at energies in the MeV
range. Precisely controlled heavy ion beams
now available permit helium and hydrogen
depth profiles to be measured to high accuracy
and good lateral resolution typical of nuclear
microanalysis.
Table I
Typical properties of different microanalytical techniques
Technique Elements
detected
Depth
resolution, nm
Lateral
resolution, μm
Depth probed,
μm
Detection
limit,
at.%
Accuracy,
%
RBS Z>1 0.3-30 0.5-5 1-10 100 -10-3 1-2
NRA Z<50 5 0.5-5 1-10 10-1 -10-6 3-5
PIXE Z>3 500 0.5-5 1-10 10-3 -10-5 3
At present, the lateral resolution provided
by nuclear microprobes is as good as 0.1 μm.
Improvements in beam focusing systems and
increased ion source brightness promise a
further reduction below 0.1 μm. The nuclear
microprobe has two distinct advantages over
the electron one: firstly, lower detection limits
and, secondly, as distinct from electrons, ions
are far less subject to scattering. For example,
a 3 MeV proton beam after passing through a
Ni foil 25 μm thick is only scattered by
0.25 μm, permitting depth analysis of films in
the range of thicknesses smaller than 10 μm.
The nuclear microprobe applied to single
crystals has another attractive feature.
Channeling and blocking affects can be
employed to locate impurities in the surface as
precisely as 0.02 Å, to extract quantitative
information on surface atom thermal
vibrations and surface chemical reactions, to
18
locate impurities in the lattice to a precision of
0.1 to 0.2 Å and identify the defect type and
determine their concentration.
Nuclear microanalytical techniques are
based on physical processes induced in the
specimen by bombardment with charged
particles of energy of a few MeV. The
intensity of the radiations subsequently
emitted from the specimen, their energy
spectra and angular distributions, which
depend on the ion species and energy, provide
a significant body of information about the
composition and structure of the specimen
analyzed. The microanalytical techniques
currently in widespread use employ elastic
scattering, nuclear reactions, and particle-
induced X-ray emission. To these techniques
we can add charged particle activation analysis
which is also a powerful instrument for the
determination of trace elements.
2.1. Rutherford Backscattering (RBS)
Elastic scattering of light ions (typically
protons and helium ions) is the most
commonly used technique. The cross section
for ion elastic scattering at low energies is
practically similar to that for Coulomb
scattering, the efficiency of the ion counting
with semiconductor detectors approaches
100%, and the ion stopping power is known
well enough, permitting the concentration of
the element of interest to be measured using
RBS to an accuracy of 1-2% without resorting
to any standards.
The best resolution is achieved for ions
scattered at angles close to 180°, so this
technique is commonly referred to as
backscattering spectrometry. Using incident
ions of greater mass one can improve mass
resolution. However, it is not usual practice to
employ ions heavier than helium ions because
of considerable radiation-induced damage in
detectors and analyzed samples. In the case of
thick samples the optimum conditions are
realized if the mass of the element to be
determined is greater than the mass of the host
atoms.
Energy spectra of elastically scattered ions
provide depth distribution information for all
the impurities present. The depth resolution
can be improved by means of a glancing
geometry where the angle of incidence (or
scattering) on the target surface is small.
Moreover, the depth resolution depends on the
beam energy spread (in electrostatic
accelerators energy spread can be decreased to
100 eV), beam energy straggling in the sample
and the geometry of the experimental setup.
Surface-barrier detectors provide a depth
resolution of 100-300 Å. High-resolution
magnetic spectrometers at IAP as well as the
glancing geometry permit the depth resolution
to be improved to 30-50 A. The use of high-
resolution, but low-transmission spectrometers
leads to greater duration of the analysis and
thus, longer exposition of the sample to the
analyzing beam. The decreased angle between
the beam direction and sample surface also
creates problems in the interpretation of the
data due to the migration of the beam on the
target. RBS is especially useful for studying
heavy impurities in a light matrix. In
favourable cases, the profiles are measured to
an accuracy of 2-5%. The thickness of the
analyzed layer depends on the ion energy,
amounting to a few um for energy of 2 MeV
sufficient for most applications. To examine
samples of greater thickness one has to
increase the ion energy. As a rule, the analysis
of the data recorded is unambiguous;
difficulties, however, arise where the impurity
concentration is large and varies with depth.
2.2. Nuclear Reaction Analysis (NRA)
A beam of light ions accelerated to MeV
energies impinges on the sample surface to
produce emission of charged particles,
neutrons and gamma-rays. Since at
bombarding energies below 3 MeV which are
generally used in commercial accelerators for
materials analysis, the Coulomb barrier
inhibits reactions with heavy elements, the
NRA technique is normally indicated for
profiling light elements. Although the energy
of incident ions is rather low, the mechanisms
underlying the nuclear reactions are far from
simple. Reactions with protons and helium
ions normally proceed via the formation of a
compound nucleus. As a result, their cross
sections abound in numerous narrow
resonances whose position and width exactly
correspond to the parameters of the compound
nucleus excited states. Reactions with d, t and
3He lead to very high excitation energies of the
compound nuclei (in the region near the giant
dipole resonance), their cross sections
19
including considerable contributions from
direct processes. There are, however,
numerous exceptions to this rule. Thus, in the
cross sections for the interactions of deutons
with light even-even nuclei (e.g. 4He, 12C, 16O,
etc.) one can observe pronounced resonances,
while in the radiative capture and inelastic
proton scattering sometimes direct processes
occur whose contribution to the cross section
is significant in the non-resonance region. The
absolute concentration of the element of
interest is determined from the measured
resonant reaction yield as well as the energy
spectra of the emitted particles.
For sufficiently narrow resonances nuclear
reactions provide depth resolution of 1 to
10 nm. The resolution provided by
nonresonant reactions is limited by the
detector resolution and beam energy straggling
in the sample. The resolution achievable with
semiconductor detectors amounts to tens of
nm, e.g. the 16O(d,a)14N reaction provides a
depth resolution of 13 nm and detection limit
of 0,1 ppm. Tabl. 2 presents data on the
detection and spatial resolution limits of this
technique.
Table 2
Detection limits and lateral resolution for some resonant nuclear reactions
Element Nuclear
reaction
Resonance
energy,
keV
Resonance
width,
eV
Resolution,
nm
Detection
limits
(1:106)
Hydrogen
1H(15N,αγ)15C
1H(19F,αγ)16O
6385
6421
6000
45000
4
23
30
100
Lithium 7Li(p,γ)8Be 441 12200 220 0,15
Boron
10B(α,p)13C
11B(p,γ)12C
11B(p,α)8Be
1507
163
660
18000
5200
300000
30
130
50
5000
50
100
Carbon
12C(p,γ)13N
13C(p,γ)14N
457
1748
31700
135
650
330
Nitrogen 14N(α,γ)18F 1531 600 2
Oxygen 18O(p,γ)15N 898
633
2200
2100
5
20 5
Fluorine 19F(p,γ)16O 340 2300 25 0,1
Natrium 23Na(p,γ)20Ne 592 600 15 0,5
Magnesium 24Mg(p,γ)25Al 223 <32 0,6
Aluminium 27Al(p,γ)28Si 405
992
87
105
1,1
10 100
Phosphorus
31P(p,γ)28Si
31P(p,γ)32S
1018
1147
<300
<160 10 100
50
Аrgon 40Ar(p,γ)41K 1102 90 7 2000
Тitanium 48Ti(p,γ)49V 1361 50 10 20
Chrome 52Cr(p,γ)53Mn 1005 9 100
2.3. Particle-Induced X-ray Emission
(PIXE)
Ions incident on solid targets produce X-
rays resulting from target atom ionization. A
typical X-ray spectrum shows the
characteristic X-ray lines imposed on a
continuous spectrum which is due to
bremsstrahlung of secondary electrons ejected
by the ion impact on the matrix atoms. The
characteristic line intensities and energies
depend on the energies and probabilities of
transitions between the atom energy levels.
Thus, by measuring X-ray spectra with a
sufficiently high energy resolution the matrix
composition can easily be determined. As a
rule, for the analysis the lines of highest
intensity are chosen corresponding to the
transitions between the lowest-lying levels.
The cross section for the matrix atom
ionization by incident ions is greatly enhanced
20
as the electron binding energy is decreased
(low Z) and the ion energy is increased.
The analytical capability of the PIXE
technique depends on the X-ray photon yield
contributing to the continuous spectrum.
Compton scattering of gamma-rays from the
nuclear reactions also contributes to the
continuous spectrum. In the case of
nonconducting samples the target voltage may
reach 10 kV. The X-ray bremsstrahlung
energy in breakdown may be as high as 10 kV,
seriously deteriorating the experimental
conditions. Taking into account the above-
mentioned effects, the lower detection limit in
PIXE is estimated to be 10-5 wt.% for thin
samples and 10-4 wt.% for thick samples. This
is a little better than conventional X-ray
fluorescence analysis can provide, and far
better than the value achievable with the
electron probe. The advantage of PIXE is that
it provides rapid multi-elemental trace
analysis. However, light elements with Z<10
are not readily detected with standard
semiconductor detectors.
The excitation of characteristic X-rays
occurs within a thin subsurface layer, the X-
ray yield being largely controlled by the
incident ion energy. This circumstance can be
employed for rough depth profiling. An
alternative technique providing, however, as
poor depth resolution consists measuring in the
X-ray yield for various angles of incidence.
2.4. Charged-Particle Activation Analysis
(CPAA)
Charged-particle activation analysis is
mostly used to determine elements with Z<10
in the cases where alternative techniques fail
to provide the required sensitivity. The CPAA
procedure is well established and was
described in detail by many authors.
2.5. Channeling
Channeling can complement any of the
above-mentioned techniques to improve
sensitivity, locate impurity atoms in the crystal
lattice more precisely, unambiguously
determine the defect type and concentration,
etc. If the incident ion beam is aligned with a
major crystal axis, the yields of nuclear
reactions with atoms sitting on substitutional
sites will be decreased essentially since the
incident ion does not undergo collisions with
neighbouring atoms in the lattice.
The lattice location of impurity atoms can
be determined by measuring the yields of
backscattering, X-ray production or nuclear
reactions as a function of the degree of
alignment of the incident ion beam with
respect to a major crystal axis. The precision
achieved taking account of the distribution of
the ion flux density across the channel and
along the penetration depth is 0.1-0.2 Å even
though the studied element is present in the
matrix in concentrations ranging from a few
hundredths to a few thousandths of wt.%. Ion
channeling in crystals can successfully be used
for profiling radiation-induced defects in
implanted samples with thicknesses in the
range of a few hundred to a thousand
angstroms. The defect concentration and depth
distribution are obtained from the
backscattering apectrum of the channeled ions.
The dechanneling cross section as a function
of the ion energy is specific to a type of defect:
σ~E-1 for randomly displaced atoms, σ~E1/2
for dislocations, σ~E0 for voids and stacking
faults, and σ~E-1/2 for interstitials. In a real
material a variety of defects are normally
present in varying concentrations. This
situation can be cleared up by using
channeling incombination with the perturbed
angular correlations or positron annihilation.
2.6. Nuclear Microprobe
The attempts to apply superior analytical
capabilities of nuclear techniques have led to
fast progress in the development of ion beam
systems. The most popular are the so-called
Russian quadruplet. It should be noted,
however, that doublet and triplet
configurations are easier to operate and
provide a-beam spot of practically similar size.
The beam energy spread has a pronounced
influence on the chromatic aberrations in the
ion optical system so it is quite understandable
that the best results have been obtained with
electrostatic accelerators. The beam intensity
is now limited by the ion source brightness to
1nA. Considerable effort is being invested into
the development of automated beam scanning
system to determine the impurity atom
distribution in the sample surface. The PIXE
technique with semiconductor detectors shows
the greatest potential. The improved efficiency
of the X-ray detection is expected to result in
about an order-of-magnitude reduction in time
21
required to measure two-dimensional
distributions of elements, and hence, less
severe radiation damage in the sample. Perfect
ion beam diagnostics based on the detection of
secondary electrons can be borrowed from
electron microscopy. The attempts to create a
scanning transmission ion microscope for
energies in the MeV range have met with
considerable success. Ion beams permit the
density distribution in thin samples to be
studied by measuring the ion energy loss.
As follows from the above considerations,
nuclear microanalysis has matured to a
powerful structure probe. High accuracy by
quantitative elemental provided analysis and
possibility of measuring impurity depth
profiles without layer removal compensate for
relatively high cost of sophisticated equipment
for nuclear microanalysis. Moreover, if we add
to the above advantages quantitative
information on the impurity lattice- and
surface location, defect type and
concentration, application of the analytical
instrumentation to high-energy ion
implantation, a rapidly growing number of
commercial accelerators and an expanding
scope of their application are quite
understandable.
Along with distinct advantages, nuclear
is the ion-induced radiation damage in
samples.
3. THE
microanalysis has an evident limitation which
IAP MICROANALYTICAL
Fig. 1 shows general view of the IAP
mi
Fig. 1. IAP microanalytical facility
Electrostatic accelerator is intended for the
proton beam and helium ion production and
characterized by the following performance
data:
- energy, MeV………………
erating mode…………..continuous
In order to obtain high quality ion beams
accelerator construction was modified by
using ion source with permanent magnet
ase plasma density and
m focusing [3,4], and by
rec and
ch
IAP
mi
FACILITY
croanalytical facility. The electrostatic
accelerator was designed and constructed at
the National Science Center “Kharkov
Institute of Physics and Technology”, National
Academy of Sciences of Ukraine specially for
the analytical application in nuclear science
and technology [1,2]. The first version of this
facility included the analyzing magnet with
bending function in order to decrease its cost.
Vacuum system and beam transport system
were maximum simplified. This limits
analytical capacities and application field of
the facility. During the last few years
odernization and further development of the
facility, i.e. entirely replacement of the
cuum system, improvement of the beam
transport system and construction of new
alytical channels have been accomplished at
IAP. In the framework of updating analyzing
and bending magnets and quadrupole
lectrostatic lenses were designed at IAP and
manufactured at Research Institute of
Electrophysical Equipment, St. Petersburg,
Russian Federation.
m
va
an
e
…0.3-2.0
system to incre
preliminary bea
- energy stability, %........................0.1
- ion type……………………..H+, He+
- proton beam current, μA……up to 50
- op
- weight, tone………………………3.0
onstruction of the high-voltage column
arge transporter improvements [5,6].
Fig. 2 shows block scheme of the
croanalytical facility.
22
4.
Fig.
channels of the m
facility include
nuclear scanning
Ru r
rea
Rutherford backscattering channel with
high resolution. Magnetic spectrometer with
double focusing described in [7] was taken as
the base of this end station. General view of
n Fig. 4.
Fig. 2. Block scheme of the IAP microanalytical facility
ANALYTICAL END STATIONS
3 shows general view of the analytical
icroanalytical facility. The
s four analytical channels, i.e.
microprobe channel, the spectrometer is shown i
therford backscattering channel, nuclea
ction channel and ion luminescence
channel.
Fig. 3. Analytical channels of the microanalytical facility
2 MV
23
Fig. 4. Magnetic Spectrometer
This spectrometer with sector-shaped
unified magnetic field has the following
parameters: radius of the parti
curvature in magnetic field is 320 mm, shear
an
f the charged
pa
cle trajectory
gle at the entrance and outlet are 460 and
4051', respectively, gap width is 16 mm, gap
height is 106 mm, distance from the source
(target) to entrance into the magnet and from
the magnet outlet to the detector are 400 and
700 mm, respectively. Measured value of the
spectrometer solid angle is (3.56±0.23)·10-3
steradian. Magnet with the scattering chamber
are mounted on the platform permitting to
rotate it 0-1500 to the left and 0-200 to the right
related to the incident beam [5].
The facility was equipped with precision
power supply [8], microprocessor controller of
the data acquisition, magnetic field measurer,
current integrator, power supply o
rticle detector and preamplifier for this
detector. All listed units of the spectrometer
except of the magnet, platform and some parts
of the vacuum system were designed and
constructed at IAP. The vacuum pumping
system of the spectrometer was also modified.
In addition, software permitting to automate
control and data acquisition during the
experiment was developed [6].
Fig. 5 presents dependence of the device
energy resolution on the slit width measured
on a silicon sample with proton energy of
1 MeV.
6
5
4
3
1 2 3 4 5 6
X, mm
ΔE, keV
Fig. 5. Energy resolution vs slit width
Resonance nuclear reaction channel. The
channel is intended for the impurity
distribution profile depth measurements in the
materials. Using of the proton resonance
reaction allows to obtain high spatial
resolution. This channel can be applied only
for l
Ion lum The
ch
ned at a zero angle of the
be
ight elements.
inescence channel.
anneincludes a crystal monochromator
operating in the wavelength range of 300-
800 nm. The channel is applied to investigate
chemical composition of impurities in
materials.
Nuclear microprobe channel. Microprobe
channel [9] is positio
nding magnet (Fig.6).
24
Fig. 6. Microprobe end station
The beam focusing on the target is realized
by the microprobe forming system based on a
separated “Russian quadruplet” with two
integrated doublets of magnet
len
scanning system, circular charged
particle detector (annular surface-barrier
detector ORTEC® (TC-017-050)) and CCD-
equipped optical microscope. Target
stem has two degree of freedom
(X
of new design
Microprobe resolution in the microanalysis
ode was determined using focused beam
scanning of the standard copper net with step
of 1000 cell per inch and further detection of
ic quadrupole positioning sy
ses of new design [10]. Yoke and poles of
each doublet are produced of a single peace of
soft magnetic iron by electric erosion
technique (Fig. 7). This allows to provide
quadrupole field symmetry and high precision
of the lens adjustment. The scanning system
consists of four ferromagnetic coils. The coil
commutation (X, Y,Y, X) provides a
conventional scanning mode of the focused
beam in the range of ±500 μm for the post-lens
arrangement of the scanning system with
frequency up to 5 kHz. Also (X,Y, -Y,-X)
commutation permitting beam-rocking
scanning mode is possible. To control beam
current in the scanning coils a specific power
supply was developed which was
synchronized with the data acquisition system
[11,12].
The target chamber is equipped with a
secondary electron detector, PIXE detector
(semiconductor detector AMPTEK® (XR-
100CR)),
Fig. 7. Doublet of magnetic quadrupole lenses
m
-Y). Target holder can hold up to 16
samples.
25
the secondary electron emission. Fig. 8,a
during the scanning in X and Y directions.
Fig. 8. Single cell of the copper net with step of 1000 cell per inch
in X and Y directions, respectively (b, c)
5. ACCELERATOR BASED MASS
Construction of the A
spectrom
HV
tandem accelerator is scheduled by IAP for
ne
with other isotopes in materials science,
ISOTOPE MASS
t IAP
come in two versions. Fig. 9 shows a general
view o ith a
coordinate- the focal
pla
shows secondary emission image of the single
cell. Figs. 8,b,c show secondary electron yield
Processing of the secondary electron yield
diagrams shows that microprobe resolution in
the microanalysis mode with I~150 pA is 2 μm
(FWHM).
(a); secondary electron yield
SPECTROMETER
MS isotope mass
environmental protection, medicine etc.
6. LASER
eter, model 4130, manufactured by
EE, the Netherlands, based on the 1 MV
xt year. Equipment has been already
supplied to the Institute and commissioning is
planned to be start in May 2009. The mass
spectrometer is expected to be used for
carbon-14 dating with following application
SPECTROMETERS
Laser mass-spectrometers developed a
f the laser mass spectrometer w
sensitive detector in
ne. Also shown is the spectrum of a sample
containing stannum and antimony of natural
abundance. The other laser mass-spectrometer
is equipped with an ICP-unit.
0 100 200 300 400
0
50
100
150
200
250
300
Образец М161,часть спектра олова и сурьмыИнтенсивность
120Sn+
Intensity
Sample M 161, spectrum of Sn+ and Sb+ isotopes
С(121Sb)=0,0014% С(Sn)=0,08%, C(Sb)=0,0024%,
канал
124Sn+
123Sb+
122Sn+
121Sb+
119Sn+
channel0 100 200 300 400
0
50
100
150
200
250
300
Образец М161,часть спектра олова и сурьмыИнтенсивность
120Sn+
Intensity
Sample M 161, spectrum of Sn+ and Sb+ isotopes
С(121Sb)=0,0014% С(Sn)=0,08%, C(Sb)=0,0024%,
канал
124Sn+
123Sb+
122Sn+
121Sb+
119Sn+
channel
Fig. 9. Laser isotope mass-spectrometer with coordinate-sensitive detector
7. FUTURE PLAN
Study of reactor materials requires
development of new experim
investigate r
materials. Me life time in
materials is effective method for the low-sized
defects examination. Max Planck Institute,
Stuttgart, Germany has transferred to IAP an
tron-6
ositron
be
ental basis to
adiative defects of the reactor
analytical facility based on the Pelle
accelerator permitting to obtain p
asurement of positron
ams with variable energy up to 6MeV. A
general view of the accelerator before its
26
demounting and transportation to IAP is
presented in Fig. 10. This accelerator is
equipped also with analytical channel to
measure hydrogen and helium distribution
profiles in the reactor materials. This area
becomes topical due to development new
materials for the fast neutron reactors and the
ITER fusion reactor. Analytical parameters of
this channel are presented in Tabl. 3 [13].
Table 3
-6 acelerator
Methods Type Ions Application Sensitivity Resolution
ed
also with
Analytical parameters of the pelletron
RBS Standard 1-2 MeV He med., heavy 10 atppm 10 nm
Special 50 nm med., heavy 0.1 atppm
Specia m 0.1 nm l med., heavy 1000 atpp
ERDA Standard 3 MeV He H 10 atppm 100 nm
Special 4.5 MeV Ne H 1000 atppm 0.5 nm
Special 1.5 MeV Ar 1000 atppm Light atoms 0.2 nm
NRA Standard p, d, 3He 10-1000 atppm Light atoms 100 nm
PIXE Standard 3MeV p, He No light atoms 1 -10 atppm none
uction
facility mounting are scheduled for 2010.
REFERENCES
zko,
S.Ya. Chekanov //
S a lear
1 p. (in
,
.Ya. Chekanov // Voprosy Atomnoj Nauki i
Co strn of the laboratory building and
1. A.D. Vergunov, Yu.Z. Levchenko,
M.T. Novikov, V.M. Pistryak, V.E. Stori
Voprosy Atomnoj Nauki i
Tekhniki. e l
983, N 3(24),
r. “Genera nd Nuc
Physics”. 13-15
Russian).
2. A.P. Batvinov, A.D. Vergunov,
L.S. Glazunov, A.V. Zats, Yu.Z. Levchenko,
M.T. Novikov, V.M. Pistryak, V.E. Storizhko
S
Fig. 10. This accelerator is equipp
27
Tekhniki. Ser. “Experimental Techniques”.
nsky, K.N. Stepanov, V.E. Sto-
riz -Cleff,
ichenko,
S.N , B.
d p
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M.I. Zakharets,
N. henko,
(in
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Ukraine // Problems of Atomic
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. V.A. Rebrov, A.G. Ponomarev,
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Rilli, H.D. Carstanjen.
A lectrosta
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solution Rutherford
ba
ТЕЛЯ
НИЯ ДЕФЕКТОВ МАТЕРИАЛОВ,
ВЫЗВАННЫХ РАДИАЦИЕЙ
В.Е. Сторижко
физики еских
ускорителей. Главной цель ние структуры и состава
реакторных материалов, а также ком рование радиационных дефектов.
В.Ю. Сторіжко
створенн ювачів.
Головною метою центру є в торних матеріалів, а також
комп’ютерне моделювання радіаційн
1985, N 1(22), p. 26-28 (in Russian).
3. V.I. Miroshnichenko, S.N. Mordik,
V.V. Olsha
hko, B. Sulkio V.I. Voznyy.
Possibility to increase RF ion source
brightness for nuclear microprobe applications
// Nucl. Instr. and Meth. 2003, v. B 201,
p. 630-636.
4. V.I. Voznyj, V.I. Miroshn
. Mordyk, V.E. Storizhko Sulkio-Cleff.
Possibility to Increase the Plasma Density in
RF Ion Sources // Collecte apers of the
Nuclear Research Institute. 2003, N 1(9),
p. 75-81 (in Russian).
5. A.A. Drozdenko, M.I. Zaharets,
N.M. March
Storizhko. Up g Charge Transport
Belt in the SOKOL Electrostatic Accelerator //
Proc. IVth Conf. High-Energy Phys., Nucl.
Phys., Accell., Kharkov, 27 Febr. – 3 March
2006). Kharkov, 2006, p. 67 (in Russian).
6. A.A. Drozdenko,
V. Kozin, N.M. Marc A.M. Sirenko,
V.E. Storizhko, A.I. Chemeris. High-Voltage
Column Repair and Updating of the SOKOL
Electrostatic Accelerator // Proc. XVth Int.
Conf. Electrostat. Accel. and Beam
Techniques, Obninsk, 6-8 June 2006, GNTsRF
FEI Publ., 2007, p. 114-121 (in Russian).
7. A.S. Dejneko, A.I. Popov, P.V. Sorokin,
A.Ya. Taranov. Double-Focusing Magnetic
Spectrometer // Izv. Acad. Nauk SSSR, Ser.
Physics. 1960, v. XXIV, N 7, p. 924-928
УСТАНОВКА ИНСТИТУТА ПРИКЛАДН
ДЛЯ МОДЕЛИРОВАНИЯ И ИЗУЧЕ
ssian).
8. A.A. Drozdenko, S.M. Duvanov,
S.N. Morduk, V.E. Storizhko. New ion elastic
scattering beam line of analytical complex at
IAP NAS
Physics Investigations”. 2008, N 49, p. 105-
109.
9. V.E. Storizhko, A.G. Ponomarev,
V.A. Rebrov, et al. // Nucl. Instr. and Meth.
2007, v. B 260, p. 49.
10
K. Palchik, N.G. Me / Nucl. Instr. and
Meth. 2007, v. B 260, p. 34.
11. S.M. Mordyk.
my, Ukraine, 1997.
12. N.A. Sayko, A.G. Ponomarev,
A.A. Drozdenko // Nucl. I
07, v. B 260, p. 101.
13. Th. Enders, M.
high-resolution e tic spectrometer
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ОЙ ФИЗИКИ НА БАЗЕ УСКОРИ
Представлены программа и состояние работ, проводимых в Институте прикладной
по созданию наноаналитического центра с использованием электростатич
ю центра является исследова
пьютерное модели
УСТАНОВКА ІНСТИТУТУ ПРИКЛАДНОЇ ФІЗИКИ НА БАЗІ ПРИСКОРЮВАЧА
ДЛЯМОДЕЛЮВАННЯ ТА ВИВЧЕННЯ ДЕФЕКТІВ МАТЕРІАЛІВ,
ВИКЛИКАНИХ РАДІАЦІЄЮ
Представлено програму та стан робіт, що проводяться в Інституті прикладної фізики по
ю наноаналітичного остатичних прискор центру з використанням електр
ивчення структури та складу реак
их дефектів.
28
|
| id | nasplib_isofts_kiev_ua-123456789-96333 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-11-30T17:30:00Z |
| publishDate | 2009 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Storizhko, V.Yu. 2016-03-14T20:43:09Z 2016-03-14T20:43:09Z 2009 IAP accelerator based facility for simulation and studies of radiation induced defects in materials / V.Yu. Storizhko // Вопросы атомной науки и техники. — 2009. — № 4. — С. 17-28. — Бібліогр.: 13 назв. — англ. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/96333 Report presents the programme and status of the works conducting at IAP NASU on the creation of the nanoanalytical center based on the electrostatic accelerators. The main purpose of the center is to investigate structure and composition of the reactor materials as well as to validate computer modeling of the radiation defects. Представлено програму та стан робіт, що проводяться в Інституті прикладної фізики по створенню наноаналітичного центру з використанням електростатичних прискорювачів. Головною метою центру є вивчення структури та складу реакторних матеріалів, а також комп’ютерне моделювання радіаційних дефектів. Представлены программа и состояние работ, проводимых в Институте прикладной физики по созданию наноаналитического центра с использованием электростатических ускорителей. Главной целью центра является исследование структуры и состава реакторных материалов, а также компьютерное моделирование радиационных дефектов. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники IAP accelerator based facility for simulation and studies of radiation induced defects in materials Установка Інституту прикладної фізики на базі прискорювача для моделювання та вивчення дефектів матеріалів, викликаних радіацією Установка Института прикладной физики на базе ускорителя для моделирования и изучения дефектов материалов, вызванных радиацией Article published earlier |
| spellingShingle | IAP accelerator based facility for simulation and studies of radiation induced defects in materials Storizhko, V.Yu. |
| title | IAP accelerator based facility for simulation and studies of radiation induced defects in materials |
| title_alt | Установка Інституту прикладної фізики на базі прискорювача для моделювання та вивчення дефектів матеріалів, викликаних радіацією Установка Института прикладной физики на базе ускорителя для моделирования и изучения дефектов материалов, вызванных радиацией |
| title_full | IAP accelerator based facility for simulation and studies of radiation induced defects in materials |
| title_fullStr | IAP accelerator based facility for simulation and studies of radiation induced defects in materials |
| title_full_unstemmed | IAP accelerator based facility for simulation and studies of radiation induced defects in materials |
| title_short | IAP accelerator based facility for simulation and studies of radiation induced defects in materials |
| title_sort | iap accelerator based facility for simulation and studies of radiation induced defects in materials |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/96333 |
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