Procedure of nanodimensional amorphous-microcrystalline structure formation by radiation in single crystal silicon

• Published in: Вопросы атомной науки и техники
• Date: 2009
• Main Authors: Dovbnya, A.N., Yefimov, V.P., Abyzov, A.S., Rybka, A.V., Zakutin, V.V., Reshetnyak, N.G., Blinkin, A.A., Romas’ko, V.P.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2009
• Subjects: Ядернo-физические методы и обработка данных
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/96509
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Procedure of nanodimensional amorphous-microcrystalline structure formation by radiation in single crystal silicon / A.N. Dovbnya, V.P. Yefimov, A.S. Abyzov, A.V. Rybka, V.V. Zakutin, N.G. Reshetnyak, A.A. Blinkin, V.P. Romas’ko // Вопросы атомной науки и техники. — 2009. — № 5. — С. 67-74. — Бібліогр.: 4 назв. — англ.

Quantum structures with enhanced electric conductivity have been formed in a single-crystal silicon matrix. An array of quantum filaments improves the collection of low-mobility charge carriers in the emitter structure of the c−Si(p, n) photoconverter. Experimental results of applying radiation te...