Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters
The paper considers the possibilities of stabilization of microstructures created in the latent tracks in single-crystalline silicon by multicharged ions from the nuclear fragments formed as a result of heavy element photofission in the process of hydrogenating. The presence of hydrogen in the amo...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2009
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| Zitieren: | Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters / A.N. Dovbnya, V.P. Yefimov, A.S. Abyzov, A.V. Rybka, E.P.Bereznyak, V.V. Zakutin, N.G. Reshetnyak, A.A. Blinkin, V.P. Romas’ko, S.V.Gabelkov, R.V.Tarasov, // Вопросы атомной науки и техники. — 2009. — № 5. — С. 75-80. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859636637758128128 |
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| author | Dovbnya, A.N. Yefimov, V.P. Abyzov, A.S. Rybka, A.V. Bereznyak, E.P. Zakutin, V.V. Reshetnyak, N.G. Blinkin, A.A. Romas’ko, V.P. Gabelkov, S.V. Tarasov, R.V. |
| author_facet | Dovbnya, A.N. Yefimov, V.P. Abyzov, A.S. Rybka, A.V. Bereznyak, E.P. Zakutin, V.V. Reshetnyak, N.G. Blinkin, A.A. Romas’ko, V.P. Gabelkov, S.V. Tarasov, R.V. |
| citation_txt | Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters / A.N. Dovbnya, V.P. Yefimov, A.S. Abyzov, A.V. Rybka, E.P.Bereznyak, V.V. Zakutin, N.G. Reshetnyak, A.A. Blinkin, V.P. Romas’ko, S.V.Gabelkov, R.V.Tarasov, // Вопросы атомной науки и техники. — 2009. — № 5. — С. 75-80. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | The paper considers the possibilities of stabilization of microstructures created in the latent tracks in single-crystalline
silicon by multicharged ions from the nuclear fragments formed as a result of heavy element photofission in the process
of hydrogenating. The presence of hydrogen in the amorphous silicon structures leads to the clustering of vacancies,
intrinsic interstitial and impurity atoms. For quantum structures, passivated with hydrogen atoms, the annihilation
process is slowed down. In the process of annealing the silicon structures the strong (Si − H)n-bonds prevent
the defect annihilation and thus stimulate the processes of precipitation and clusterization. Hydrogen, filling the
irradiation-broken bonds, neutralizes their electrical activity. Optimal conditions for stabilisation of such structures
are determined: irradiation doses, methods of hydrogenation and dissociation of H2, annealing parameters.
Розглядаються можливостi стабiлiзацiї мiкроструктур, створюваних в прихованих треках в монокристалiчному кремнiї багатозарядними iонами з осколкiв ядер важких елементiв при їх фотодiленнi, в
процесi гiдрування. Присутнiсть водню в аморфних структурах кремнiю приводить до кластеризацiї вакансiй, власних мiжвузельних i домiшкових атомiв. Для квантових структур, пасивованих атомами водню, процес анiгiляцiї загальмований. При вiдпалi кремнiєвих структур мiцнi (Si − H)n-зв’язки
перешкоджають анiгiляцiї дефектiв i тим самим стимулюють процеси преципiтацiї i кластеризацiї. Водень, заповнюючи обiрванi в результатi опромiнювання зв’язки, нейтралiзує їх електричну активнiсть.
Визначено оптимальнi умови створення таких структур: дози опромiнювання, методи гiдрування та
дисоцiацiї H2, режими вiдпалу.
Рассматриваются возможности стабилизации микроструктур, создаваемых в скрытых треках в моно-кристаллическом кремнии многозарядными ионами из осколков ядер тяжелых элементов при их фото-
делении, в процессе гидрирования. Присутствие водорода в аморфных структурах кремния приводит
к кластеризации вакансий, собственных межузельных и примесных атомов. Для квантовых структур, пассивированных атомами водорода, процесс аннигиляции заторможен. При отжиге кремниевых
структур прочные (Si − H)n-связи препятствуют аннигиляции дефектов и тем самым стимулируют
процессы преципитации и кластеризации. Водород, заполняя оборванные в результате облучения связи, нейтрализует их электрическую активность. Определены оптимальные условия создания таких
структур: дозы облучения, методы гидрирования и диссоциации H2, режимы отжига.
|
| first_indexed | 2025-12-07T13:16:17Z |
| format | Article |
| fulltext |
STABILIZATION OF NANO-SIZED STRUCTURES IN THE
VOLUME OF SINGLE-CRYSTALLINE SILICON FOR
PHOTOCONVERTERS
A.N. Dovbnya, V.P. Yefimov, A.S. Abyzov, A.V. Rybka, E.P.Bereznyak,
V.V. Zakutin, N.G. Reshetnyak, A.A. Blinkin, V.P. Romas’ko,
S.V.Gabelkov, R.V.Tarasov ∗,
National Science Center ”Kharkov Institute of Physics and Technology”, 61108, Kharkov, Ukraine
(Received April 3, 2009)
The paper considers the possibilities of stabilization of microstructures created in the latent tracks in single-crystalline
silicon by multicharged ions from the nuclear fragments formed as a result of heavy element photofission in the process
of hydrogenating. The presence of hydrogen in the amorphous silicon structures leads to the clustering of vacancies,
intrinsic interstitial and impurity atoms. For quantum structures, passivated with hydrogen atoms, the annihilation
process is slowed down. In the process of annealing the silicon structures the strong (Si − H)n-bonds prevent
the defect annihilation and thus stimulate the processes of precipitation and clusterization. Hydrogen, filling the
irradiation-broken bonds, neutralizes their electrical activity. Optimal conditions for stabilisation of such structures
are determined: irradiation doses, methods of hydrogenation and dissociation of H2, annealing parameters.
PACS: 03.65.Pm, 03.65.Ge, 61.80.Mk
1. INTRODUCTION
A traditional approach to the problem of controlling
the properties of semiconductor materials, based on
the process of doping them with impurities creat-
ing certain electron levels in the forbidden zone, has
principal restrictions exerting the influence on the
efficiency of silicon photoconverters. Lack of effective
methods of interface structure formation in the (c-
Si) semiconductor, providing a maximum of charge
carrier extraction from the photoconverter volume,
is one of main causes for a low efficiency of photo-
cells fabricated from silicon materials [1]. Radiation
processes allow forming in the single-crystalline ma-
trix of a silicon structure with nano-sized amorphous-
microcrystalline filaments possessing an increased
electrical conductivity [2]. Application of such-type
structures improves the slow charge carrier extrac-
tion from the volume of the c-Si photocell emitter
structure volume (see Fig.1). The quantum struc-
tures Ln, Lp, L′n, L′p are formed as a result of ra-
diation processes in the c − Si(p, n)-matrices by
nuclear fragments of uranium-238 photofission at
the electron accelerators KUT-1 (Ee ∼ 12 MeV ),
EPOS (Ee ∼ 26 MeV ) with subsequent hydrogena-
tion possibly combined with radiation process. The
structures of c − Si(p, n) matrices are subjected to
fragmentation by the accelerated electron beam. The
p− n junction width δp−n is determined by the drift
lengths of nonequilibrium current carriers, Lcn, Lcp
are the diffusion lengths of
Fig.1. Structure format of a solar radiation-to-
electric energy photoconvertor having an increased
efficiency
nonequilibrium carriers in the monocrystalline sili-
con. Amorphous phase stabilization and localized
state density decrease in the mobility gap are pro-
vided by the technological hydrogenation process. A
porous structure of disordering channels along the
238U nuclear fission fragment path can promote the
hydrogen migration to the amorphous phase bound-
aries in the Si(p, n) matrix volume. The hydrogen
presence in silicon leads to the clusterization of va-
cancies of intrinsic interstitial and impurity atoms.
The main condition leading to the cluster formation
consists in the simultaneous presence of hydrogen
∗Corresponding author E-mail address: yefimov@kipt.kharkov.ua
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2009, N5.
Series: Nuclear Physics Investigations (52), p.75-80.
75
and oversaturated defect solutions in the structure.
The interaction of hydrogen with impurities and de-
fects initiates decomposition of their oversaturated
solution with formation of hydrogen precipitates.
As a result, there formed are passivated clusters
not observed in the case of hydrogen absence. As
the annealing temperature is increasing, the instable
configurations become disappears while the strong
(Si : H)n bounds prevent from the defect annihila-
tion and thus stimulate the processes of precipitation
and clusterization of intrinsic interstitials. Besides,
hydrogen fills the broken bonds and neutralizes their
electrical activity. Basing on the foregoing material,
it can be concluded that cluster formation occurs
in the hydrogenated silicon, containing radiation
defects, in the course of the heat treatment. The
electron structure of clusters reflects the internal
structure and, here, the role of hydrogen is determin-
ing. Hydrogen atoms stimulate the defect formation
in silicon, enter into the cluster composition and
play a catalytic role in the cluster formation from
finer defects. The migration process is described in
terms of hydrogen atom capture and release by the
energy-bound states. The hydrogen capture results
in the formation of (Si : H)n cluster structures. The
bound state density is changing as a function of the
concentration of hydrogen, temperature and time.
The average atomic displacement length is propor-
tional to the distance between the hydrogen capture
areas. The traps are the structure defects (vacancies,
divacancies), grain boundaries and impurity atoms.
The hydrogen diffusion occurs at the grain bound-
aries and between the lattice planes. In the case of
a low hydrogen concentration the cluster sizes are
limited. In the case of a high hydrogen concentration
the effective hydrogen diffusion is determined by the
hydrogen atom capture with subsequent release from
the cluster structures. If the source of hydrogen is
unlimited, its migration in silicon and the profile of
hydrogen concentration distribution in the material
depth CH(x, t), to the region where its concentration
coincides with the trap density, is described by the
following equation [3]
CH(x, t) = C0erfc(x/S(t)) , (1)
where C0 is the hydrogen concentration at the sam-
ple surface (x = 0), x is the diffusion depth, S(t) =
(4Deff t1/2), t is the process time; Deff is the effec-
tive diffusion coefficient determined from the equa-
tion
Deff = D0 exp(−Ea/kBT ) . (2)
The time of neutralization (passivation) of broken
spin bonds and the formation of Si : H cluster struc-
tures (see Table 2) are determined from the equation
t = t0 exp(Ea/kBT ) , (3)
where Ea is the activation energy, T is the sample
temperature, respectively, t0 = 10−11 for Si : H
compounds. In the case of a high concentration of
hydrogen atoms their diffusion does not depend on
the degree of disordering of lattice atoms. The weak
Si−Si bonds are broken by hydrogen atoms and the
spin-active centers are generated. Then, as a result
of center passivation, additional Si : H cluster struc-
tures are formed.
The time of Si:H cluster structures formation depending on the annealing temperature
hour min
Time∗ 583 110 24 5.7 92 27 7.8 3 1.1
Temperature∗∗ 70 85 100 115 130 145 160 175 190
∗- Time of Si:H compound formation; ∗∗-Annealing Temperature in ◦C.
Hydrogen is migrating in the material at a mini-
mum concentration of traps determined by their en-
ergy state (0.5...1.7) eV . If hydrogen is captured by
the Si−Si bond centers, its diffusion into the mater-
ial depth stops already in the thin near-surface layer.
In the material structure the deep lying traps are first
filled and then the shallow-lying ones. In the course
of diffusion in the shallow-lying traps, an equilibrium
hydrogen distribution is established, which, for the
case of an unlimited hydrogen source is described by
the Gauss distribution [3]
CH(x, t) =
Q√
πDeff
exp
( −x2
4Deff · t
)
, (4)
where Q =
∫
N(x)dxC0
√
Deff t is the total hydro-
gen introduced into the semiconductor through the
surface unit during the diffusion time, N(x) is the
hydrogen concentration as a function of the distance
from the crystal surface x. According to equation
4 the surface concentration C0 decreases with time
and the diffusion layer thickness increases. To intro-
duce hydrogen into the large depth from the crystal
surface a long time is required because of its low
solubility which is determined by the high value of
the chemical potential, (1.2...1.3) eV . Therefore, us-
ing the existing means it is impossible to solve the
problem of hydrogen migration into the silicon vol-
ume. A high hydrogen concentration at the required
depth of Si material can be reached only by the
forced rupture of Si : (H)n and H2 bound states
under irradiation. Besides, the hydrogen migration
process is possible only in the temperature condi-
tions given in Table 1, or at temperature breaking
the bonds in complex silanes (< 550◦C, but being
insufficient for the (a − Si)-structure crystallization.
Hydrogen from Si-H bond can be released already at
76
350◦ C, if the (Si − Si) bond is formed instead of
Si − H; at ∼ 550◦ C a fast Si − Al reaction takes
place [4]. So, using the sources of isostatic hydrogen
pressure and the technology of material radiation
processing at the charged particle accelerators it is
possible to shape a required profile of hydrogen con-
centration distribution in the path depth of uranium
nuclear fission-fragment in the lateral track. Upon
the strong amorphous structure hydrogenation to
the level of cluster formation there can arise boron-
hydrogen bonds in the a − Si : H(B)-structures
reducing the effect of increased radiation conduction.
A maximum conduction can be recovered by the
subsequent vacuum sample annealing during several
minutes at T ∼ 300◦ C. Infrared spectroscopy re-
sults evidence on the existence of boron-hydrogen
bonds in the a− Si : H(B)-structures stabilizing the
structure in the process of long-continued operation.
Purpose of the work is experimental definition of
conditions for stabilisation of metastable nano-size
amorphous-microcrystalline structures in the bulk of
monocrystalline silicon.
2. EXPERIMENTAL TECHNIQUE
Two variants of the hydrogenation process are devel-
oped:
• 1) posthydrogenation - after forming the
quantum structures by the uranium nuclear
photofission fragments (see Fig.2) there occurs
a molecular hydrogen implantation into the sil-
icon sample in the high-pressure gasostat (see
Fig.3) with subsequent hydrogen molecule dis-
sociation in the material structure at the low-
energy electron accelerator.
• 2) simultaneous hydrogenation with formation
of quantum structures by annealing them in the
process of crystal radiation processing at the
electron accelerator ”EPOS” (26 MeV ) above
the photonuclear reaction threshold (see Fig.4).
Fig.2. Two-cascade system of c-Si-crystal irradi-
ation for the posthydrogenation process. Indexes
1-6 define position of crystals for the first stage of
irradiation process, 1’-4’ and 7-10 – for the second
stage of irradiation behind the absorber of electrons
By combining the processes of irradiation and hy-
drogenation it is possible to exclude the process of
hydrogenation via the high pressure gasostat with
subsequent hydrogen molecular dissociation in the
silicon structure with electrons from the additional
accelerator. The thermostat position in the irra-
diation zone is shown in Figs.4. The hydrogena-
tion of latent track disordered structures in the
c − Si-crystal is performed in the high-pressure
gasostat with subsequent hydrogen molecule disso-
ciation by radiation.The hydrogen atoms, segregat-
ing into the defect region, stabilize the disordered
structure and play a catalytic role for cluster for-
mation in a latent track during the heat treatment.
Fig.3. Installation for thermal treatment of sil-
icon samples under pressure of 150 atm for the
posthydrogenation process. 1 - cylinder with gaseous
hydrogen, 2,3 - valves, 4 - 250 atm manometer; 5 -
high-pressure container; 6 - hydrogen storage vessel;
7 - heater; 8 - power supply unit; 9 - thermocouple;
10 - temperature gauge; 11 - sample, 12 - capsule
for placement of samples in the heater; 13 - copper
pipe of the cooling system
Fig.4. Two-cascade system of c-Si-crystal irradi-
ation combined with quantum structure formation
and hydrogenation. Indexes 1-6 define position of
crystals for the first stage of irradiation process,
1’-4’ and 7-10 – for the second stage of irradiation
behind the absorber of electrons
3. IR-ABSORPTION SPECTRA OF THE
IRRADIATED ATOMIC SILICON
STRUCTURES
A silicon layer acts as an absorber in the visible spec-
trum and is transparent in the IR spectral region.
IR-absorption spectra are sensitive to the oscillations
77
of the bonds (Si − H) in banding frequencies at
840...890 cm−1, modes bound with SiH2 dihydride,
and in two stretching frequencies at 1980...2030 cm−1
and 2060...2160 cm−1, connected with tension of
monohydrides, dihydrides and trihydrides. The in-
frared radiation absorption by the free charge carri-
ers in silicon is sensitive to the type of scattering of
electrons and holes. Intraband absorption can be ex-
plained by two main mechanisms - electron scattering
on the atomic oscillations and on the lattice defects.
For the quantitative determination of the absorption
coefficient we can use the Schmidt formula [5]
K =
8
9π
e3h̄2
ε0cm2k2
( m
m∗
) N
T 2
1
µ
1
n
sh
(
h̄ω
2kT
)
K2
(
h̄ω
2kT
)
,
(5)
where ε0 is the dielectric vacuum constant, N is the
charge carrier concentration, µ is the carrier mobility,
m+
n = 0.26 m and m∗
n = 0.39 m are the average values
of effective masses, T is the crystal temperature, K2 is
the modified Bessel function of the second kind. The
mobility of both electrons and holes is proportional
to ∼ T−2.5 The value of the temperature change in
the forbidden zone width is 4.0·10−4 eV/◦ C, the acti-
vation energy is 1.09 eV . The value of the free-carrier
absorption is proportional to their concentration, mo-
bility and wavelength square. The value of the cross-
section absorption by boron impurity centers in sili-
con is 15 · 10−16 cm2. The Schmidt formula for high
temperatures (h̄ωkT ) takes the form [6]:
K ≈ 4
9
√
π
e3h̄2
ε0cm2k2
( m
m+
) N
T 2
1
µ
1
n
(
2kT
h̄ω
)3/2
. (6)
The absorption modulation can be obtained by
changing the charger carrier number (N) either due
to the nuclear doping, nano-sized structure forming
or due to the mobility (µ) changing (decreasing) in
the case of deep atomic disordering in the crystalline
lattice. The drift charge carrier mobility in the single-
crystalline silicon at 300 K is 1360 cm2V −1sec−1 for
electrons and ∼ 500 cm2V −1sec−1 for holes. The
spectral region of photon absorption by free carriers
in our experiment covers the wavelength interval of
(4.1...25)m. In the structures with a high concentra-
tion of radiation defects the mobility value decreases
and one observes a typical structure absorption by
the free charge carriers that is equivalent to the value
N decreasing too. Infrared absorption spectra of
c − Si-crystals (initial and irradiated) are shown in
Fig.5 for the crystals with p-type conduction and
these for the crystals with n-type conduction are
shown in Fig.6 (IR absorption spectra are measured
on the IR spectrophotometer UR-20 (Carl Zeiss) in
a spectral range of 400...2200cm−1). One can see
that the transmission, T , increases after irradiation
considerably for the p-type crystals and slightly for
the n-type crystals.
Fig.5. IR absorption spectra of the p − c − Si-
structure before irradiation and after radiation
processing with electrons and uranium fission
fragments at the accelerator ”EPOS” at a dose
1800 Mrad (100 hours)
Fig.6. IR absorption spectra of the n − c − Si-
structure before irradiation and after radiation
processing with electrons and uranium fission
fragments in the accelerator ”EPOS” at a dose
1800Mrad (100 hours)
The difference in the transmission values of the p
and n- structures of initial samples is explained
by the difference in the values of mobility, effec-
tive masses of charge carriers and intrinsic defect
concentrations. The curve of transmission in the n-
structure is situated above the curve of transmission
in the p-structure. For irradiated samples the values
of N are decreasing because of the broken atomic
bonds. Therefore, the absorption coefficients are de-
creasing, and, as a consequence, the transmission
values are increasing. The both crystals were un-
der similar irradiation conditions. The transmission
curves of irradiated samples are situated above the
transmission curves of initial samples. The absolute
value of IR-radiation absorption (transmission) in
the initial crystals could be measured after annealing
of intrinsic defects in them. These defects deter-
mine the crystalline peak position in the region of
a ”halo” amorphization presence at the wide-angle
X-ray spectroscopy. Therefore, the crystals must be
preliminary annealed. In the process of radiation
processing of crystals without preliminary anneal-
ing the concentration of intrinsic defects in them
is supplemented with the concentration of created
radiation defects. The structure transmission value
increases with decreasing of the value of IR-radiation
absorption on the disordered structures formed due
to the photonuclear reactions in silicon. The con-
tribution of amorphous structures from the uranium
nuclear photo-fission fragments is not fixed as the vol-
78
ume, which they occupy in the crystal, is much less
then the volume of disordered structures upon mea-
suring the absorption value by the IR-spectroscopy
method. The measurement is carried out throughout
the crystal volume. The transmission curves of the
crystals after radiation processing at the accelerators
”KUT-1” and ”EPOS” will be different even at an
equal irradiation dose level because of the presence
at the accelerator ”EPOS” of a photonuclear reaction
channel, creating the radiation doping factors, and
in connection with the substantial disordering of the
whole crystal structure. The effects of silicon struc-
ture irradiation on the IR-absorption are presented
in Fig.7.
Fig.7. Dependence of the IR-spectra versus the
dose of irradiation with electrons, uranium fis-
sion fragments and versus the partial annealing
of the semiconductor structure (L5 − 1800 Mrad,
T = 1250C and K3− 3600 Mrad)
In the range of 2000...2200 cm−1, the free charge car-
riers give main contribution to the IR absorbtion.
The irradiated sample L-5 becomes more transpar-
ent, as after irradiation the degree of crystalline
structure disordering increases and, as a result, there
appear many traps of charge carriers decreasing their
concentration. Forming of latent tracks by the 238U
fragments at this stage does not lead to some change
in the conduction. During the subsequent anneal-
ing the number of charger carriers is decreasing, in
the region of latent tracks a nano-sized amorphous-
microcrystalline structure is formed with a high con-
duction that leads to the integrated sample resistance
lowering (see the samples K-3 before and after anneal-
ing). The hydrogen implantation causes significant
changes in the absorption spectra. The lowering (re-
covering) of the IR transmission of disordered struc-
tures in single-crystalline silicon down to the level
of transmission of c− Si(p, n)-crystal with increased
electrical conduction depends on the hydrogen aggre-
gate state influence on the structure characteristics of
irradiated samples. In the crystals having nano-sized
structures the temperature of radiation defect an-
nealing should not be higher than the temperature of
quantum filament formation in the amorphous struc-
tures of the single-crystalline matrix. However, such
a temperature process is insufficient for recovering the
specific resistance value in the c − Si-matrix struc-
ture between the quantum filaments. Displacement
of the annealing temperature range for amorphous
structures occurs due to their hydrogenation. The
hydrogenation method permits to neutralize defects
requiring the high annealing temperatures that is
very necessary for separation of quantum structures
with an increased electrical conduction, increase of
the lifetime of current carriers and their diffusion
lengths in the doped single-crystalline silicon semi-
conductor.
4. ANALYSIS OF EXPERIMENTAL DATA
The lowering (recovering) of the transmis-
sion down to the level of transmission in the
c − Si(p, n)-crystal with an increased electri-
cal conduction (quantum structures), as a func-
tion of the hydrogen aggregate state influ-
ence on the structure characteristics of unirradi-
ated and irradiated samples, is shown in Fig.8.
Fig.8. IR absorption spectra of the c − Si- crystal
after its structure radiation processing, hydro-
genation and annealing 1) IR-spectrum of the
c− Si : H2-crystal, irradiated with gamma-quantum
by the 2500 Mrad dose at the accelerator KUT-1
and hydrogenated with molecular hydrogen in the
high-pressure gasostat along the latent tracks created
by uranium-238 nuclear fission fragments (molec-
ular hydrogen pressure P = 130 atm, temperature
T = 1250C, hydrogenation time t = 10 h). 2) IR-
spectrum of the hydrogenated silicon crystal (position
1) after irradiation with secondary electrons by the
30 Mrad dose at the accelerator KUT-1 for H2
dissociation in the crystal structure. 3) IR-spectrum
of the hydrogenated crystal after H2 dissociation
with secondary electrons (position 2) and annealing
at T = 1250C, annealing time t = 2 h (precipitation
process)
The results of experiments on the silicon single-
crystal sample saturation with hydrogen in the
high-pressure gasostat and the numeration of IR-
absorption spectra are given in the order of carry-
ing out the radiation technologies for c − Si-crystal
processing. As it follows from Fig.8, the transmis-
sion level decreasing in the c− Si-crystal for the IR-
radiation in the range from 2000...2200 cm−1 with
∼ 60% (position 1) to ∼ 10% (position 3) is related
with the production in the single-crystalline matrix of
quantum (amorphous-crystalline) structures having
an increased specific electrical conductivity. After hy-
drogenation and annealing at T = 1250C a new phase
is precipitated, the transmission level continues to de-
crease from ∼ 40% (position 2) to ∼ 10% (position
3) and the conducting microstructures in the c− Si-
matrix are recovered. In the process of hydrogena-
79
tion the hydrogen is implanted only into the latent
tracks and forms a−Si : B,P (H) compounds, whose
crystallization temperature significantly exceeds the
temperature of annealing the point defects in the
c − Si(B, P )-matrix volume. So, the technological
process under consideration permits to neutralize the
point radiation defects in the matrix structure and to
separate only the amorphous phases with quantum
conducting structures in the c− Si(p, n)-crystals.
5. THE CONCLUSION
The presence of hydrogen in the amorphous silicon
structures leads to the clustering of vacancies, in-
trinsic interstitial and impurity atoms. For quantum
structures, passivated with hydrogen atoms, the an-
nihilation process is slowed down. In the process of
annealing the silicon structures the strong (Si−H)n-
bonds prevent the defect annihilation and thus stimu-
late the processes of precipitation and clusterization.
Hydrogen, filling the irradiation-broken bonds, neu-
tralizes their electrical activity. Optimal conditions
for stabilisation of such structures are determined:
irradiation doses, methods of hydrogenation and dis-
sociation of H2, annealing temperatures.
References
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СТАБИЛИЗАЦИЯ НАНОРАЗМЕРНЫХ СТРУКТУР В ОБЪЕМЕ
МОНОКРИСТАЛЛИЧЕСКОГО КРЕМНИЯ ДЛЯ ФОТОПРЕОБРАЗОВАТЕЛЕЙ
А.Н. Довбня, В.П. Ефимов, А.С. Абызов, А.В. Рыбка, Е.П. Березняк, В.В. Закутин,
Н.Г. Решетняк, А.А. Блинкин, В.П. Ромасько, С.В. Габелков, Р.В. Тарасов
Рассматриваются возможности стабилизации микроструктур, создаваемых в скрытых треках в моно-
кристаллическом кремнии многозарядными ионами из осколков ядер тяжелых элементов при их фото-
делении, в процессе гидрирования. Присутствие водорода в аморфных структурах кремния приводит
к кластеризации вакансий, собственных межузельных и примесных атомов. Для квантовых струк-
тур, пассивированных атомами водорода, процесс аннигиляции заторможен. При отжиге кремниевых
структур прочные (Si − H)n-связи препятствуют аннигиляции дефектов и тем самым стимулируют
процессы преципитации и кластеризации. Водород, заполняя оборванные в результате облучения свя-
зи, нейтрализует их электрическую активность. Определены оптимальные условия создания таких
структур: дозы облучения, методы гидрирования и диссоциации H2, режимы отжига.
СТАБIЛIЗАЦIЯ НАНОРОЗМIРНИХ СТРУКТУР В ОБ’ЄМI
МОНОКРИСТАЛIЧНОГО КРЕМНIЮ ДЛЯ ФОТОПЕРЕТВОРЮВАЧIВ
А.М. Довбня, В.П. Ефiмов, О.С. Абизов, О.В. Рибка, Е.П. Березняк, В.В. Закутiн,
М.Г. Решетняк, А.А. Блiнкiн, В.П. Ромасько, С.В. Габелков, Р.В. Тарасов
Розглядаються можливостi стабiлiзацiї мiкроструктур, створюваних в прихованих треках в монокри-
сталiчному кремнiї багатозарядними iонами з осколкiв ядер важких елементiв при їх фотодiленнi, в
процесi гiдрування. Присутнiсть водню в аморфних структурах кремнiю приводить до кластеризацiї
вакансiй, власних мiжвузельних i домiшкових атомiв. Для квантових структур, пасивованих атома-
ми водню, процес анiгiляцiї загальмований. При вiдпалi кремнiєвих структур мiцнi (Si−H)n-зв’язки
перешкоджають анiгiляцiї дефектiв i тим самим стимулюють процеси преципiтацiї i кластеризацiї. Во-
день, заповнюючи обiрванi в результатi опромiнювання зв’язки, нейтралiзує їх електричну активнiсть.
Визначено оптимальнi умови створення таких структур: дози опромiнювання, методи гiдрування та
дисоцiацiї H2, режими вiдпалу.
80
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| id | nasplib_isofts_kiev_ua-123456789-96510 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T13:16:17Z |
| publishDate | 2009 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Dovbnya, A.N. Yefimov, V.P. Abyzov, A.S. Rybka, A.V. Bereznyak, E.P. Zakutin, V.V. Reshetnyak, N.G. Blinkin, A.A. Romas’ko, V.P. Gabelkov, S.V. Tarasov, R.V. 2016-03-17T20:32:54Z 2016-03-17T20:32:54Z 2009 Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters / A.N. Dovbnya, V.P. Yefimov, A.S. Abyzov, A.V. Rybka, E.P.Bereznyak, V.V. Zakutin, N.G. Reshetnyak, A.A. Blinkin, V.P. Romas’ko, S.V.Gabelkov, R.V.Tarasov, // Вопросы атомной науки и техники. — 2009. — № 5. — С. 75-80. — Бібліогр.: 6 назв. — англ. 1562-6016 PACS: 03.65.Pm, 03.65.Ge, 61.80.Mk https://nasplib.isofts.kiev.ua/handle/123456789/96510 The paper considers the possibilities of stabilization of microstructures created in the latent tracks in single-crystalline silicon by multicharged ions from the nuclear fragments formed as a result of heavy element photofission in the process of hydrogenating. The presence of hydrogen in the amorphous silicon structures leads to the clustering of vacancies, intrinsic interstitial and impurity atoms. For quantum structures, passivated with hydrogen atoms, the annihilation process is slowed down. In the process of annealing the silicon structures the strong (Si − H)n-bonds prevent the defect annihilation and thus stimulate the processes of precipitation and clusterization. Hydrogen, filling the irradiation-broken bonds, neutralizes their electrical activity. Optimal conditions for stabilisation of such structures are determined: irradiation doses, methods of hydrogenation and dissociation of H2, annealing parameters. Розглядаються можливостi стабiлiзацiї мiкроструктур, створюваних в прихованих треках в монокристалiчному кремнiї багатозарядними iонами з осколкiв ядер важких елементiв при їх фотодiленнi, в процесi гiдрування. Присутнiсть водню в аморфних структурах кремнiю приводить до кластеризацiї вакансiй, власних мiжвузельних i домiшкових атомiв. Для квантових структур, пасивованих атомами водню, процес анiгiляцiї загальмований. При вiдпалi кремнiєвих структур мiцнi (Si − H)n-зв’язки перешкоджають анiгiляцiї дефектiв i тим самим стимулюють процеси преципiтацiї i кластеризацiї. Водень, заповнюючи обiрванi в результатi опромiнювання зв’язки, нейтралiзує їх електричну активнiсть. Визначено оптимальнi умови створення таких структур: дози опромiнювання, методи гiдрування та дисоцiацiї H2, режими вiдпалу. Рассматриваются возможности стабилизации микроструктур, создаваемых в скрытых треках в моно-кристаллическом кремнии многозарядными ионами из осколков ядер тяжелых элементов при их фото- делении, в процессе гидрирования. Присутствие водорода в аморфных структурах кремния приводит к кластеризации вакансий, собственных межузельных и примесных атомов. Для квантовых структур, пассивированных атомами водорода, процесс аннигиляции заторможен. При отжиге кремниевых структур прочные (Si − H)n-связи препятствуют аннигиляции дефектов и тем самым стимулируют процессы преципитации и кластеризации. Водород, заполняя оборванные в результате облучения связи, нейтрализует их электрическую активность. Определены оптимальные условия создания таких структур: дозы облучения, методы гидрирования и диссоциации H2, режимы отжига. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Ядернo-физические методы и обработка данных Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters Стабiлiзацiя нанорозмiрних структур в об’ємi монокристалiчного кремнiю для фотоперетворювачiв Стабилизация наноразмерных структур в объеме монокристаллического кремния для фотопреобразователей Article published earlier |
| spellingShingle | Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters Dovbnya, A.N. Yefimov, V.P. Abyzov, A.S. Rybka, A.V. Bereznyak, E.P. Zakutin, V.V. Reshetnyak, N.G. Blinkin, A.A. Romas’ko, V.P. Gabelkov, S.V. Tarasov, R.V. Ядернo-физические методы и обработка данных |
| title | Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters |
| title_alt | Стабiлiзацiя нанорозмiрних структур в об’ємi монокристалiчного кремнiю для фотоперетворювачiв Стабилизация наноразмерных структур в объеме монокристаллического кремния для фотопреобразователей |
| title_full | Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters |
| title_fullStr | Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters |
| title_full_unstemmed | Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters |
| title_short | Stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters |
| title_sort | stabilization of nano-sized structures in the volume of single-crystalline silicon for photoconverters |
| topic | Ядернo-физические методы и обработка данных |
| topic_facet | Ядернo-физические методы и обработка данных |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/96510 |
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