Preparation of terbium monosulfide thin crystalline film
A process is described for the growth of thin crystalline TbS films ranging in thickness from 0,3 to 1,8 µm by flash vacuum thermal evaporation from preliminary synthesed bulk crystal of TbS. The films was grown on glass-ceramic, fused silica, sapphire and (111) single-crystal silicon. Thin film...
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Науковий фізико-технологічний центр МОН та НАН України
2010
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| Cite this: | Preparation of terbium monosulfide thin crystalline film / I.G. Tabatadze, Z.U. Jabua, A.V. Gigineisvili, I.L. Kupreisvili // Физическая инженерия поверхности. — 2010. — Т. 8, № 4. — С. 333–335. — Бібліогр.: 12 назв. — рос. |
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Tabatadze, I.G. Jabua, Z.U. Gigineisvili, A.V. Kupreisvili, I.L. 2016-04-19T14:06:18Z 2016-04-19T14:06:18Z 2010 Preparation of terbium monosulfide thin crystalline film / I.G. Tabatadze, Z.U. Jabua, A.V. Gigineisvili, I.L. Kupreisvili // Физическая инженерия поверхности. — 2010. — Т. 8, № 4. — С. 333–335. — Бібліогр.: 12 назв. — рос. 1999-8074 https://nasplib.isofts.kiev.ua/handle/123456789/98913 546.65:537.226 A process is described for the growth of thin crystalline TbS films ranging in thickness from 0,3 to 1,8 µm by flash vacuum thermal evaporation from preliminary synthesed bulk crystal of TbS. The films was grown on glass-ceramic, fused silica, sapphire and (111) single-crystal silicon. Thin films had cubic crystal structure (NaCl structure type) with lattice parameters a = 5,52 Å. Разработана технология приготовления тонких кристаллических плёнок толщиной 0,3–1,8 мкм методом взрывного вакуумно- термического испарения предварительно синтезированного объемного кристалла TbS. Подложками служили пластины из ситала, кварца, сапфира и монокристаллического кремния с ориентацией (111). Плёнки имели кубическую решётку (структурный тип NaCl) с параметром решётки a = 5,52 Å.. Розроблено технологію готування тонких кристалічних плівок товщиною 0,3 – 1,8 мкм методом вибухового вакуумно-термічного випару попередньо синтезованого об’ємного кристала TbS. Підкладинками слугували пластини із ситалу, кварцу, сапфіра й монокристалічного кремнію з орієнтацією (111). Плівки мали кубічні ґрати (структурний тип NaCl) з параметром ґрат a = 5,52 Å. Authors express L.A.Ivanovoj’s gratitude for the help in carrying out of experiments ru Науковий фізико-технологічний центр МОН та НАН України Физическая инженерия поверхности Preparation of terbium monosulfide thin crystalline film Article published earlier |
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Preparation of terbium monosulfide thin crystalline film |
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Preparation of terbium monosulfide thin crystalline film Tabatadze, I.G. Jabua, Z.U. Gigineisvili, A.V. Kupreisvili, I.L. |
| title_short |
Preparation of terbium monosulfide thin crystalline film |
| title_full |
Preparation of terbium monosulfide thin crystalline film |
| title_fullStr |
Preparation of terbium monosulfide thin crystalline film |
| title_full_unstemmed |
Preparation of terbium monosulfide thin crystalline film |
| title_sort |
preparation of terbium monosulfide thin crystalline film |
| author |
Tabatadze, I.G. Jabua, Z.U. Gigineisvili, A.V. Kupreisvili, I.L. |
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Tabatadze, I.G. Jabua, Z.U. Gigineisvili, A.V. Kupreisvili, I.L. |
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2010 |
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Russian |
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Физическая инженерия поверхности |
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Науковий фізико-технологічний центр МОН та НАН України |
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Article |
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A process is described for the growth of thin crystalline TbS films ranging in thickness from 0,3 to
1,8 µm by flash vacuum thermal evaporation from preliminary synthesed bulk crystal of TbS. The
films was grown on glass-ceramic, fused silica, sapphire and (111) single-crystal silicon. Thin films
had cubic crystal structure (NaCl structure type) with lattice parameters a = 5,52 Å.
Разработана технология приготовления тонких кристаллических плёнок толщиной 0,3–1,8 мкм
методом взрывного вакуумно- термического испарения предварительно синтезированного
объемного кристалла TbS. Подложками служили пластины из ситала, кварца, сапфира и монокристаллического кремния с ориентацией (111). Плёнки имели кубическую решётку (структурный тип NaCl) с параметром решётки a = 5,52 Å..
Розроблено технологію готування тонких кристалічних плівок товщиною 0,3 – 1,8 мкм методом
вибухового вакуумно-термічного випару попередньо синтезованого об’ємного кристала TbS.
Підкладинками слугували пластини із ситалу, кварцу, сапфіра й монокристалічного кремнію
з орієнтацією (111). Плівки мали кубічні ґрати (структурний тип NaCl) з параметром ґрат
a = 5,52 Å.
|
| issn |
1999-8074 |
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https://nasplib.isofts.kiev.ua/handle/123456789/98913 |
| citation_txt |
Preparation of terbium monosulfide thin crystalline film / I.G. Tabatadze, Z.U. Jabua, A.V. Gigineisvili, I.L. Kupreisvili // Физическая инженерия поверхности. — 2010. — Т. 8, № 4. — С. 333–335. — Бібліогр.: 12 назв. — рос. |
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| first_indexed |
2025-11-25T12:03:36Z |
| last_indexed |
2025-11-25T12:03:36Z |
| _version_ |
1850511868049752064 |
| fulltext |
333
INTRODUCTION
Sulfides of rare – earth elements have interesting
thermal, magnetic, optical and other properties
[1 – 11]. However not all these compound are
studied well enough. Such a little studied com-
pounds concerns monosulfide of terbium.
The purposes of the presented work was wor-
king out of technology of preparation of the
crystal films of terbium momonosylfide.
EXPERIMENTAL
The crystalline TbS films ranging in thickness
from 0,3 to 1,8 mµ were grown by flash vacu-
um thermal evaporation from preliminary syn-
thezed bulk crystal of TbS.
The films were grown on glass-ceramic, fu-
sed silica, sapphire and (111) single-crystal sili-
con substrates 15×8×1 mm in dimentions. These
substrate materials were shown to have an in-
significant effect on the phase composition and
crystallinity of the films. During the growth pro-
cess, the vacuum in the deposition chamber was
maintained at 10–6 Pa. The substrate temperatu-
re was varied in our experiment from 750 to
1250 K, the deposition rate – from 35 to
65 D/sec.
The phase composition and crystallinite of the
films were cheked by X-ray diffraction (Ni-fil-
tered CuKα radiation, continius scan mode with
a scan rate of 4⋅10–2 deg/S) and electron dif-
fraction. Elecrton diffraction patterns were ob-
tained in reflection at an accelerating voltage of
(75 – 100)⋅102 V. The surface of the films was
examined by X-ray fluorescence analysis (Came-
bax-Microbeam system). Their elemental ana-
lysis was determined by electron X-ray micro-
analysis.
RESULTS AND DISCUTSSION
By X-ray and electron diffraction methods were
investigated influence of temperature of a sub-
strate in the range of 750 – 1250 К and also the
material of a substrate on crystallinity and phase
structure of prepared films.
As have shown conducted researches TbS
films well grows practically on all applied sub-
strates.
At temperatures of a substrate in the region
750 – 990 K are formed polycrystalline single-
phase films, only on occasion on X-ray diffrac-
tion pattern additional weak maxima of reflexion
УДК 546.65:537.226
PREPARATION OF TERBIUM MONOSULFIDE THIN CRYSTALLINE FILM
I.G. Tabatadze, Z.U. Jabua, A.V. Gigineisvili, I.L. Kupreisvili
Department of Physics,Georgian Technical University, Tbilisi
Georgia
Received 21.10.2010
A process is described for the growth of thin crystalline TbS films ranging in thickness from 0,3 to
1,8 µm by flash vacuum thermal evaporation from preliminary synthesed bulk crystal of TbS. The
films was grown on glass-ceramic, fused silica, sapphire and (111) single-crystal silicon. Thin films
had cubic crystal structure (NaCl structure type) with lattice parameters a = 5,52 D.
Keyword: thin film, vacuum thermal evaporation, bulk crystal, lattice parameters.
Разработана технология приготовления тонких кристаллических плёнок толщиной 0,3–1,8 мкм
методом взрывного вакуумно- термического испарения предварительно синтезированного
обьемного кристалла TbS. Подложками служили пластины из ситала, кварца, сапфира и моно-
кристаллического кремния с ориентацией (111). Плёнки имели кубическую решётку (струк-
турный тип NaCl) с параметром решётки a = 5,52 D.
Ключевые слова: тонкая плёнка, вакуумно-термическое испарение, обьемный кристалл,
параметр решётки.
Розроблено технологію готування тонких кристалічних плівок товщиною 0,3 – 1,8 мкм методом
вибухового вакуумно-термічного випару попередньо синтезованого об’ємного кристала TbS.
Підкладинками слугували пластини із ситалу, кварцу, сапфіра й монокристалічного кремнію
з орієнтацією (111). Плівки мали кубічні ґрати (структурний тип NaCl) з параметром ґрат
a = 5,52 D.
Ключові слова: тонка плівка, вакуумно-термічний випар, об’ємний кристал, параметр ґрат.
I.G. Tabatadze, Z.U. Jabua, A.V. Gigineisvili, I.L. Kupreisvili, 2010
ФІП ФИП PSE, 2010, т. 8, № 4, vol. 8, No. 4334
which are found out it is possible was to connect
with presence of small quantity Tb2S3 and Tb2S4.
At temperatures 990 – 1140 K to presence of a
texture with an axis [200] and [100] is observed.
At temperature 1130 K a texture is not present
and there are separate blocks of TbS mono-
crcystalls with a size to 10–4 m which limits dot
reflexes are well revealed. At subsequent in-
crease in temperature of a substrate from 1170
to 1200 K one phases of films it is broken and in
the prepared films to the dress with TbS presents
well revealed inclusions of Yb2S3.
Fig. 1 shows a typical the electronogramm
and fig. 2. X-ray diffraction pattern of an TbS
film grown at a substrate temperature of
1140 K. Analysis of X-ray and electron diffrac-
tion data indicated that the film grown at this
substrate temperature consisted TbS with lattice
parameter a = 5,52 D in good agreement with
data reported for bulk samples [12].
Using the method of X-ray microanalyze it
was shown that obtained films include
50.1 at. % Tb and 49.9 at.% S.
In secondary X-rays the surface of the pre-
pared films has been removed. The atoms of
terbium and sulphur are distributed on a surface
of films in regular intervals enough as it is visible
from fig. 3 and fig. 4.
At room temperature were measured specific
reasistancy and thermoelectromotive force (ther-
mo-emf) on the prepared films. In order to mea-
sure the specific resistancy by means of the com-
pensation method, the Holl effect – using con-
stant current and magnetic field (20000 D), ther-
mo-emf – by the absolute method with correcti-
on for thermo-emf of copper. A film had speci-
fic electroresistance of an order 0,5⋅10–5 Ohm⋅m,
Fig.1. Electron diffraction pattern of a thin TbS film
(sapphire substrate, film thickness, 1,7 µm).
Fig. 2. X-ray diffraction pattern of a thin TbS film (glas
– ceramic substrate, film thickness, 1,3 µm).
Fig. 3. The image of distribution of Tb atoms on a surface
of TbS films in secondary X-rays (×400).
Fig. 4. The image of distribution of S atoms on a surface
of TbS films in secondary X-rays (×400).
PREPARATION OF TERBIUM MONOSULFIDE THIN CRYSTALLINE FILM
335
thermo-emf equaled ∼ 4⋅10–6 V/K and the Hall
constant – ∼ 2⋅10–10 m3/C. This data of electro-
physical measurements will well enough be co-
ordinated with the corresponding data received
on bulk crystals of TbS [12].
CONCLUSIONS
The technology of preparation of thin crystal
films of TbS is developed through flash vacuum
thermal evaporation from preliminary synthesed
bulk crystal of TbS. The thickness of films va-
ried within 0,3 – 1,8 µm. The films was grown
on glass-ceramic, fused silica, sapphire and (111)
single-crystal silicon. Electronographical and
X-ray analyze showed that thin films had cubic
crystal structure of NaCl type with lattice para-
meters a = 8.91 D. Using the method of X-ray
microanalyze it was shown that obtained films
include 50.1 at.%Tb and 49,91 at.%S. At room
temperature all films had specific electroresis-
tance of an order 0,5⋅10–5 Ohm⋅m, thermo-emf
equaled ∼ 410–6 V/K and the Hall constant –
∼ 10–10 m3/C.
Authors express L.A.Ivanovoj’s gratitude for
the help in carrying out of experiments
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I.G. TABATADZE, Z.U. JABUA, A.V. GIGINEISVILI, I.L. KUPREISVILI
ФІП ФИП PSE, 2010, т. 8, № 4, vol. 8, No. 4
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