Structural transformation in C/Si multilayer after annealing

Amorphous C/Si multilayers were prepared by DC magnetron sputtering technique and investigated by transmission electron microscopy and low-angle x-ray diffraction methods after annealing at 650 and 950 °C. The amorphous interlayers of 0.5 − 0.6 nm thick were found at C/Si and Si/C interfaces bein...

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Published in:Физическая инженерия поверхности
Date:2012
Main Authors: Zhuravel, I.O., Bugayev, Ye.A., Konotopsky, L.E., Zubarev, E.M., Sevryukova, V.A., Kondratenko, V.V.
Format: Article
Language:English
Published: Науковий фізико-технологічний центр МОН та НАН України 2012
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/98978
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Structural transformation in C/Si multilayer after annealing / I.O. Zhuravel, Ye.A. Bugayev, L.E. Konotopsky, E.M. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Физическая инженерия поверхности. — 2012. — Т. 10, № 3. — С. 314–318. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine