Structural transformation in C/Si multilayer after annealing

• Veröffentlicht in: Физическая инженерия поверхности
• Datum: 2012
• Hauptverfasser: Zhuravel, I.O., Bugayev, Ye.A., Konotopsky, L.E., Zubarev, E.M., Sevryukova, V.A., Kondratenko, V.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Науковий фізико-технологічний центр МОН та НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/98978
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Structural transformation in C/Si multilayer after annealing / I.O. Zhuravel, Ye.A. Bugayev, L.E. Konotopsky, E.M. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Физическая инженерия поверхности. — 2012. — Т. 10, № 3. — С. 314–318. — Бібліогр.: 13 назв. — англ.

Amorphous C/Si multilayers were prepared by DC magnetron sputtering technique and investigated by transmission electron microscopy and low-angle x-ray diffraction methods after annealing at 650 and 950 °C. The amorphous interlayers of 0.5 − 0.6 nm thick were found at C/Si and Si/C interfaces bein...