Electron-electron drag in crystals with multivalley band
Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer pronounced in germanium than in silicon.
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| Date: | 2009 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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oai:nasplib.isofts.kiev.ua:123456789-1188642025-02-23T17:18:06Z Electron-electron drag in crystals with multivalley band Boiko, I.I. Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer pronounced in germanium than in silicon. 2009 Article Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.72, 72.20 https://nasplib.isofts.kiev.ua/handle/123456789/118864 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Mobility of electrons in multivalley bands of Si and Ge is considered with due
regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility
at low temperatures. This effect is clearer pronounced in germanium than in silicon. |
| format |
Article |
| author |
Boiko, I.I. |
| spellingShingle |
Boiko, I.I. Electron-electron drag in crystals with multivalley band Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Boiko, I.I. |
| author_sort |
Boiko, I.I. |
| title |
Electron-electron drag in crystals with multivalley band |
| title_short |
Electron-electron drag in crystals with multivalley band |
| title_full |
Electron-electron drag in crystals with multivalley band |
| title_fullStr |
Electron-electron drag in crystals with multivalley band |
| title_full_unstemmed |
Electron-electron drag in crystals with multivalley band |
| title_sort |
electron-electron drag in crystals with multivalley band |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| citation_txt |
Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT boikoii electronelectrondragincrystalswithmultivalleyband |
| first_indexed |
2025-07-22T04:12:52Z |
| last_indexed |
2025-07-22T04:12:52Z |
| _version_ |
1838318955613126656 |