Особливості магнітоопору монокристалів InSe І GaSe
Giant magnetoresistance in the laser intercalated by chrome single crystals of gallium selenide and indium selenide is observed. Specific resistance in xInSe is changed both in its value and sign. In xGaSe the applied magnetic field causes 87% change of the specific resistance. Reason of the anomalo...
Gespeichert in:
| Datum: | 2013 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Vinnytsia National Technical University
2013
|
| Online Zugang: | https://oeipt.vntu.edu.ua/index.php/oeipt/article/view/15 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Optoelectronic Information-Power Technologies |
Institution
Optoelectronic Information-Power Technologies| Zusammenfassung: | Giant magnetoresistance in the laser intercalated by chrome single crystals of gallium selenide and indium selenide is observed. Specific resistance in xInSe is changed both in its value and sign. In xGaSe the applied magnetic field causes 87% change of the specific resistance. Reason of the anomalous magnetoresistance is analyzed. |
|---|