ІНФРАЧЕРВОНИЙ СЕНСОР З ВІД’ЄМНИМ ДИФЕРЕНЦІЙНИМ ОПОРОМ ДЛЯ КОНТРОЛЮ ПРАЦЕЗДАТНОСТІ ЕЛЕМЕНТІВ РАДІОЕЛЕКТРОННОЇ АПАРАТУРИ
In article the opportunity of transformation of infrared radiation is shown on the basis of the self-oscillator which will consist of transistor structures with negative resistance, and which also contains the pyroelectric material as sensitive element. Graphical dependences of current-voltage chara...
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| Datum: | 2017 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
Vinnytsia National Technical University
2017
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| Schlagworte: | |
| Online Zugang: | https://oeipt.vntu.edu.ua/index.php/oeipt/article/view/441 |
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| Назва журналу: | Optoelectronic Information-Power Technologies |
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Optoelectronic Information-Power Technologies| Zusammenfassung: | In article the opportunity of transformation of infrared radiation is shown on the basis of the self-oscillator which will consist of transistor structures with negative resistance, and which also contains the pyroelectric material as sensitive element. Graphical dependences of current-voltage characteristic, of transformation function and the sensitivity equation, which can be used for the engineering calculation of infrared sensors parameters, are received. |
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