Розробка генератора детермінованого хаосу на основі транзисторної структури з від’ємним опором
The paper proposes and investigates a new circuit solution for a deterministic chaos generator based on a bipolar transistor structure with negative differential resistance. The field of data transmission has expanded in recent years due to the rapid development of communication infrastructure, such...
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| Date: | 2025 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
Vinnytsia National Technical University
2025
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| Subjects: | |
| Online Access: | https://oeipt.vntu.edu.ua/index.php/oeipt/article/view/777 |
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| Journal Title: | Optoelectronic Information-Power Technologies |
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Optoelectronic Information-Power Technologies| Summary: | The paper proposes and investigates a new circuit solution for a deterministic chaos generator based on a bipolar transistor structure with negative differential resistance. The field of data transmission has expanded in recent years due to the rapid development of communication infrastructure, such as mobile and Internet networks. Ensuring secure data transmission in electronic communication and radio engineering devices and systems is crucial for maintaining security and realizing the full potential of these infocommunication technologies. Among the promising developments in physical-level security in data transmission is the integration of chaos theory, which increases security by using the unpredictability inherent in chaotic signals. The paper considers the possibility of obtaining a chaotic mode in a semiconductor generator based on a bipolar transistor structure with negative differential resistance. This chaos generator system has three dynamic variables: the voltage on the equivalent capacitance of the transistor structure between the collectors of the first and second bipolar transistors, and the third is the current flowing through the inductance of the oscillatory circuit. The dynamic processes of deterministic chaos are determined by the reactive properties of the transistor structure with negative differential resistance. A mathematical model of the deterministic chaos generator has been developed in the form of a system of first-order differential equations based on the state variable method, which allows determining the value of the output signal frequency depending on the supply and control voltages, as well as the parameters of the main elements of the oscillator at any point in the circuit at a given time. Using the MATLAB program package, a computer circuit engineering study of the parameters and characteristics of the generated electrical oscillations in a chaotic mode was carried out. In comparison with analogues, the proposed and investigated deterministic chaos generator has improved load capacity and higher speed, has a short time for establishing stationary oscillations. |
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