Сили зображення між близько розділеними діелектриками
It is shown that the correct accounting of the space dispersion effects in the dielectrics (the intrinsical semiconductors) separated by a small vacuum interval leads to continuity of the image potential at the interfaces, making it possible to consider the charged state (microscopic structure) of t...
Saved in:
| Date: | 2003 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2003
|
| Online Access: | https://surfacezbir.com.ua/index.php/surface/article/view/102 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Surface |
| Download file: |  |
Institution
Surface| Summary: | It is shown that the correct accounting of the space dispersion effects in the dielectrics (the intrinsical semiconductors) separated by a small vacuum interval leads to continuity of the image potential at the interfaces, making it possible to consider the charged state (microscopic structure) of the dielectric surfaces within the framework of the proposed model (real and hydroxylated silica surfaces). |
|---|