Отримання мікропоруватих шарів GaAs методом хімічного травлення на підкладках р-GaAs та їхня фотолюмінісценція

The porous GaAs layers have been obtained on the GaAs(100) and GaAs(111) substrates by the chemical etching method. Etching of the substrates was carried out in HF-based solutions using HNO3 or Н2О2 as an oxidizer. Sponge layers were formed with adding of HNO3 and pores got pyramid-like shapes unifo...

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Bibliographic Details
Date:2012
Main Authors: Paschenko, G. A., Kravetsky, M. Yu., Fomin, A. V.
Format: Article
Language:Russian
Published: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2012
Online Access:https://www.cpts.com.ua/index.php/cpts/article/view/150
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Journal Title:Chemistry, Physics and Technology of Surface

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Chemistry, Physics and Technology of Surface