Отримання мікропоруватих шарів GaAs методом хімічного травлення на підкладках р-GaAs та їхня фотолюмінісценція
The porous GaAs layers have been obtained on the GaAs(100) and GaAs(111) substrates by the chemical etching method. Etching of the substrates was carried out in HF-based solutions using HNO3 or Н2О2 as an oxidizer. Sponge layers were formed with adding of HNO3 and pores got pyramid-like shapes unifo...
Saved in:
| Date: | 2012 |
|---|---|
| Main Authors: | Paschenko, G. A., Kravetsky, M. Yu., Fomin, A. V. |
| Format: | Article |
| Language: | Russian |
| Published: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2012
|
| Online Access: | https://www.cpts.com.ua/index.php/cpts/article/view/150 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Chemistry, Physics and Technology of Surface |
Institution
Chemistry, Physics and Technology of SurfaceSimilar Items
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)
by: V. V. Vainberg, et al.
Published: (2013)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)
by: Vainberg, V.V., et al.
Published: (2013)
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)
by: Sghaier, H., et al.
Published: (2012)
GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)
by: Storozhenko, I. P., et al.
Published: (2013)
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)
by: Karimov, A.V., et al.
Published: (2005)
GaAs диоды Ганна с AlAs-GaAs-AlAs резонансно туннельным катодом
by: Стороженко, И.П., et al.
Published: (2006)
by: Стороженко, И.П., et al.
Published: (2006)
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs
by: Klimovskaya, A.I., et al.
Published: (2002)
by: Klimovskaya, A.I., et al.
Published: (2002)
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
by: Kladko, V.P., et al.
Published: (2000)
by: Kladko, V.P., et al.
Published: (2000)
Получение периодических слоев GaAs методом электрохимического травления
by: Дяденчук, А.Ф., et al.
Published: (2014)
by: Дяденчук, А.Ф., et al.
Published: (2014)
Дизайн та дослідження фазових характеристик гетероструктури por-Ga2O3/por-GaAs/mono-GaAs
by: Kovachov, S. S., et al.
Published: (2024)
by: Kovachov, S. S., et al.
Published: (2024)
Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
Ростовое оборудование для производства полуизолирующего GaAs методом Чохральского
by: Ковтун, Г.П., et al.
Published: (2006)
by: Ковтун, Г.П., et al.
Published: (2006)
Ростовое оборудование для производства полуизолирующего GaAs методом Чохральского
by: Kovtun, G. P., et al.
Published: (2006)
by: Kovtun, G. P., et al.
Published: (2006)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)
by: M. M. Vinoslavskii, et al.
Published: (2018)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)
by: Vinoslavskii, M.M., et al.
Published: (2018)
Особенности квантовых эффектов в 2D-структурах GaAs/n-InGaAs/GaAs с двойными квантовыми ямами
by: Арапов, Ю.Г., et al.
Published: (2007)
by: Арапов, Ю.Г., et al.
Published: (2007)
Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
by: Holovatsky, V.A., et al.
Published: (2018)
by: Holovatsky, V.A., et al.
Published: (2018)
Влияние металлического контакта к запорному InxGa1-xAs-GaAs-гетерокатоду на работу GaAs-диодов Ганна
by: Аркуша, Ю.В., et al.
Published: (2004)
by: Аркуша, Ю.В., et al.
Published: (2004)
Effect of γ-irradiation on the structure of high density polyethylene composites with GaAs and GaAs<Te> fillers
by: Gadzhieva, N.N., et al.
Published: (2020)
by: Gadzhieva, N.N., et al.
Published: (2020)
TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
by: Kryshtab, T.G., et al.
Published: (1999)
by: Kryshtab, T.G., et al.
Published: (1999)
Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
by: Datsenko, L.I., et al.
Published: (2001)
by: Datsenko, L.I., et al.
Published: (2001)
Polarization-dependent photocurrent in p-GaAs
by: V. R. Rasulov
Published: (2016)
by: V. R. Rasulov
Published: (2016)
Polarization-dependent photocurrent in p-GaAs
by: V. R. Rasulov
Published: (2016)
by: V. R. Rasulov
Published: (2016)
2D magnetofermionic condensate in GaAs/AlGaAs heterostructures
by: L. V. Kulik, et al.
Published: (2017)
by: L. V. Kulik, et al.
Published: (2017)
Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)
by: Levchenko, I.V., et al.
Published: (2017)
Двумерный магнетофермионный конденсат в GaAs/AlGaAs гетероструктурах
by: Кулик, Л.В., et al.
Published: (2017)
by: Кулик, Л.В., et al.
Published: (2017)
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
by: Dmitruk, N.L., et al.
Published: (2005)
by: Dmitruk, N.L., et al.
Published: (2005)
Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
by: Boltovets, N.S., et al.
Published: (2002)
by: Boltovets, N.S., et al.
Published: (2002)
Солнечные элементы на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2003)
by: Круковский, С.И., et al.
Published: (2003)
A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
by: H. Sghaier, et al.
Published: (2012)
by: H. Sghaier, et al.
Published: (2012)
Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures
by: A. P. Savelev, et al.
Published: (2017)
by: A. P. Savelev, et al.
Published: (2017)
Structural properties of lattice-matched InGaPN on GaAs (001)
by: P. Sritonwong, et al.
Published: (2018)
by: P. Sritonwong, et al.
Published: (2018)
Structural properties of lattice-matched InGaPN on GaAs (001)
by: P. Sritonwong, et al.
Published: (2018)
by: P. Sritonwong, et al.
Published: (2018)
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: S. A. Iliash, et al.
Published: (2016)
by: S. A. Iliash, et al.
Published: (2016)
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: Iliash, S.A., et al.
Published: (2016)
by: Iliash, S.A., et al.
Published: (2016)
Комплексное легирование слоев GaAs, InGaAs при жидкофазной эпитаксии
by: Круковский, С.И.
Published: (2002)
by: Круковский, С.И.
Published: (2002)
Obtaining periodic layers GaAs by electrochemical etching
by: A. F. Djadenchuk, et al.
Published: (2014)
by: A. F. Djadenchuk, et al.
Published: (2014)
Active inductances controlled in GaAs MESFET technology
by: Benbouza, M.S., et al.
Published: (2006)
by: Benbouza, M.S., et al.
Published: (2006)
Optical properties of p-type porous GaAs
by: Kidalov, V.V., et al.
Published: (2005)
by: Kidalov, V.V., et al.
Published: (2005)
Similar Items
-
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013) -
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013) -
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012) -
GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013) -
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)