Хіміко-динамічне полірування поверхні CdTe травильними композиціями (NH4)2Cr2O7–HCl–щавлева кислота
The nature of chemical dissolution of undoped and doped by the IV-A elements (Ge, Sn, Pb) of cadmium telluride in the (NH4)2Cr2O7–HCl–oxalic etching composition has been investigated. The projections of the equal etching rates of these semiconductors have been constructed, and the concentration regi...
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| Datum: | 2012 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2012
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| Online Zugang: | https://www.cpts.com.ua/index.php/cpts/article/view/160 |
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| Назва журналу: | Chemistry, Physics and Technology of Surface |
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Chemistry, Physics and Technology of Surface| Zusammenfassung: | The nature of chemical dissolution of undoped and doped by the IV-A elements (Ge, Sn, Pb) of cadmium telluride in the (NH4)2Cr2O7–HCl–oxalic etching composition has been investigated. The projections of the equal etching rates of these semiconductors have been constructed, and the concentration regions of the polishing solutions have been determined. It has been shown that the dissolution of these materials is limited by the diffusion stages. Surface state after the etching has been investigated by the metallography and SEM. The composition of the near surface layers has been determined using energy dispersive X-ray spectroscopy. |
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