Хіміко-динамічне полірування поверхні CdTe травильними композиціями (NH4)2Cr2O7–HCl–щавлева кислота

The nature of chemical dissolution of undoped and doped by the IV-A elements (Ge, Sn, Pb) of cadmium telluride in the (NH4)2Cr2O7–HCl–oxalic etching composition has been investigated. The projections of the equal etching rates of these semiconductors have been constructed, and the concentration regi...

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Datum:2012
Hauptverfasser: Chukhnenko, P. S., Khalavka, Yu. B., Ivanits'ka, V. G., Tomashik, Z. F., Tomashik, V. M., Stratiychuk, I. B.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2012
Online Zugang:https://www.cpts.com.ua/index.php/cpts/article/view/160
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Назва журналу:Chemistry, Physics and Technology of Surface

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Chemistry, Physics and Technology of Surface

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