Хіміко-динамічне полірування поверхні CdTe травильними композиціями (NH4)2Cr2O7–HCl–щавлева кислота

The nature of chemical dissolution of undoped and doped by the IV-A elements (Ge, Sn, Pb) of cadmium telluride in the (NH4)2Cr2O7–HCl–oxalic etching composition has been investigated. The projections of the equal etching rates of these semiconductors have been constructed, and the concentration regi...

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Bibliographic Details
Date:2012
Main Authors: Chukhnenko, P. S., Khalavka, Yu. B., Ivanits'ka, V. G., Tomashik, Z. F., Tomashik, V. M., Stratiychuk, I. B.
Format: Article
Language:Ukrainian
Published: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2012
Online Access:https://www.cpts.com.ua/index.php/cpts/article/view/160
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Journal Title:Chemistry, Physics and Technology of Surface

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Chemistry, Physics and Technology of Surface