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Role of surface microstructure in forming the interaction potential between vacuum space near separated non-identical dielectric (semiconductor) nanoparticles

&lt;p&gt;The structural component &lt;em&gt;&amp;Delta;V&lt;sub&gt;st&lt;/sub&gt;(r)&amp;nbsp;&lt;/em&gt;&amp;nbsp;of the interaction potential&amp;nbsp;&amp;nbsp;&lt;em&am...

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Bibliographische Detailangaben
Datum:	2006
Hauptverfasser:	Ilchenko, L. G., Lobanov, V. V., Chuiko, A. A.
Format:	Artikel
Sprache:	Russisch
Veröffentlicht:	Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2006
Online Zugang:	https://surfacezbir.com.ua/index.php/surface/article/view/174
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Назва журналу:	Surface
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Institution

Surface

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Zusammenfassung:	&lt;p&gt;The structural component &lt;em&gt;&amp;Delta;V&lt;sub&gt;st&lt;/sub&gt;(r)&amp;nbsp;&lt;/em&gt;&amp;nbsp;of the interaction potential&amp;nbsp;&amp;nbsp;&lt;em&gt;V(r)&amp;nbsp;&lt;/em&gt;&amp;nbsp;in a vacuum inter-val dividing two dielectric (semiconductor) nanoparticles determined by the microscopic (atomic) structure of their surfaces is calculated theoretically.&lt;/p&gt; &lt;p&gt;Within the framework of local and nonlocal electrostatics for an asymmetrical system is shown that for the narrow dividing distances L~3-20 &amp;Aring; the superposition of the modulated part of the potential &lt;em&gt;&amp;Delta;V&lt;sub&gt;st&lt;/sub&gt;(r)&amp;nbsp;&lt;/em&gt;&amp;nbsp;from both surfaces promotes originating of the regions of the considerable increase (decrease) of the total potential barrier height within all the dividing interval.&lt;/p&gt;