Роль атомної структури поверхонь у формуванні потенціалу у вакуумному проміжку між близькорозділеними металом та напівпровідником
With in the framework of a non-local electrostatics, the structure component ∆Vst(r) has been calculated in the vacuum interval  between a metal and a semiconductor with the quasi-neutral surfaces of two types of well-organized superficial lattices. It has been shown that s...
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| Дата: | 2008 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2008
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| Онлайн доступ: | https://surfacezbir.com.ua/index.php/surface/article/view/253 |
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| Назва журналу: | Surface |
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Репозитарії
Surface| Резюме: | With in the framework of a non-local electrostatics, the structure component ∆Vst(r) has been calculated in the vacuum interval  between a metal and a semiconductor with the quasi-neutral surfaces of two types of well-organized superficial lattices.
It has been shown that structural potential ∆Vst(r), which is a superposition of the microscopic structures of both surfaces, is asymmetrical and stipulates a lateral (along the interfaces) change in the total potential barrier V(r) in the vacuum gap. The increase ∆Vst(r) (amplitudes) is related to decrease in the distance  between semiconductor and metal as well as with decrease in the free electrons concentration in the metal. |
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