Екситонні стани в напівпровідникових наносистемах

• Дата: 2016
• Автори: Pokutnyi, S. I., Gorbyk, P. P., Mahno, S. M., Prokopenko, S. L.
• Формат: Стаття
• Мова: Russian
• Опубліковано: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2016
• Теми: квантові точки; екситон; селенід цинку
• Онлайн доступ: https://www.cpts.com.ua/index.php/cpts/article/view/386
• Назва журналу: Chemistry, Physics and Technology of Surface

In nanoheterostructures promising for the implementation of effective sources of visible and near-infrared radiation, there are self-assembled structures with ZnSe nanoislands. To create new efficient optoelectronic devices on the basis of heterostructures of quantum dots (QDs) ZnSe it is necessary to study the mechanisms of absorption (emission) of light in such nanoheterostructures. The theory of QDs exciton absorption of light has been developed within the framework of the adiabatic approximation, using perturbation theory. It has been shown that the band gap of zinc selenide QDs exciton states a zone arises located under the bottom of the conduction band. It has been found that the decrease in the band gap in the nanosystems detected under the experimental conditions is due to the transition of an electron with a nonequilibrium quantum-level situated in the valence QD to the level of the zone of the exciton states. It has been found that changing the parameters of nanostructures (QD size, the ratio of effective masses of electrons and holes, the values of the dielectric constants of matrices and QD) can be directed to control the fundamental parameters of nanostructures - band gaps. This effect causes the radiation of energy quanta of restructuring in the visible and near-infrared wavelengths. Such nanoheterostructures are promising for new nanophotonic elements.