Плівки CdS на поруватих підкладках Si, одержані методом хімічного поверхневого осадження

• Datum: 2018
• Hauptverfasser: Dyadenchuk, A. F., Kidalov, V. V.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2018
• Schlagworte: плівки CdS; поруваті підкладки Si; хімічне поверхневе осадження; фотоелектричні перетворювачі
• Online Zugang: https://www.cpts.com.ua/index.php/cpts/article/view/453
• Назва журналу: Chemistry, Physics and Technology of Surface

The purpose of this work is to develop a technology for the production of CdS films by chemical surface deposition on porous substrates of nanocrystalline silicon. The possibility of using the heterostructure CdS/porous-Si/p-Si as photovoltaic solar energy converters is considered.The formation of layers CdS was carried out by the method of precipitation in a chemical bath from an aqueous solution. As a template, plates of porous silicon (Si) are used. Nanoporous silicon was obtained by electrochemical etching of single-crystal plates Si (100) of p-type conductivity with a specific impedance of 6 m?•cm.For the chemical surface deposition of CdS films, a freshly prepared 0.015 M aqueous solution of cadmium chloride CdCl2, 1.5 M solution of thiourea CH4N2S, and 14.28 M solution of ammonium hydroxide NH4OH were used.The process of heating the plates lasted 5 min. The final temperature was 80 °C.The morphology of the porous silicon surface, the cross-section of the resulting CdS/porous-Si/p-Si structures and the chemical composition of the films obtained were investigated using a scanning electron microscope. The chemical composition of the film surface was determined using X-ray spectral microanalysis.According to the results of the conducted studies, it has been found that the thickness of the CdS layer is homogeneous and is 10–30 microns. CdS films have n-type conductivity.X-ray diffractograms of the sample exhibit pronounced peaks at 2? ? 26.5° and at 2? ? 43.3°, which correspond to the hexagonal modification of CdS. There are also intense peaks from the silicon substrate.A solar photocell is produced, which is a heterostructure of n-CdS/porous-Si/p-Si. The value of the efficiency of the received solar cells exceeds 5.4 % of the efficiency value for similar structures of CdS/p-Si under the same conditions for obtaining a conductive film of n-type CdS.Thus, the heterostructures CdS/porous-Si/p-Si produced by the precipitation of CdS layers in a chemical bath from an aqueous solution can be used as the basis of photovoltaic converters for solar energy.