Температурна залежність параметрів поверхневих станів структури метал–діелектрик–напівпровідник
Investigation temperature dependence of surface states parameters o metal-insulator-semiconductor are calculated a the high frequencies. The impedance of a built-channel bodiless planar field-effect transistor with two isolated gates are studied by a phase metrical method.
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| Date: | 2012 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2012
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| Online Access: | https://surfacezbir.com.ua/index.php/surface/article/view/470 |
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| Journal Title: | Surface |
| Download file: |  |
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Surface| Summary: | Investigation temperature dependence of surface states parameters o metal-insulator-semiconductor are calculated a the high frequencies. The impedance of a built-channel bodiless planar field-effect transistor with two isolated gates are studied by a phase metrical method. |
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