Вплив пружних деформацій на локальні характеристики струму окремих нанокластерів Ge на Si, досліджених методом провідної атомно-силової мікроскопії
Local current characteristics of epitaxial systems with Ge nanoislands on Si (001) were investigated using conducting atomic force microscopy (AFM). The distribution of local currents inside Ge quantum dots showed a good correspondence with the values of internal deformations that determine the maxi...
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| Datum: | 2012 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Russisch |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2012
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| Online Zugang: | https://surfacezbir.com.ua/index.php/surface/article/view/485 |
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| Назва журналу: | Surface |
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Surface| Zusammenfassung: | Local current characteristics of epitaxial systems with Ge nanoislands on Si (001) were investigated using conducting atomic force microscopy (AFM). The distribution of local currents inside Ge quantum dots showed a good correspondence with the values of internal deformations that determine the maximal density of states by the nanoisland edges. The linear dependence of the current value to the power 3/2 on Ge nanoisland lateral size was revealed that corresponds to the calculated linear dependence of local density of states on the value of unit deformation inside Ge nanoisland made within the framework of classical theory of elasticity and continuous medium theory. |
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