Microscopic structure of the semiconductor surface in the external electric field
In this paper a theoretical model for the free semiconductor surface is proposed. The principled capability of the correct calculation of the electrostatic potential of the real semiconductors surface is demonstrated on the example of Silicon surface. The potential relief V(r̅,F) of Si(100) surface...
Збережено в:
| Дата: | 2001 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2001
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| Онлайн доступ: | https://surfacezbir.com.ua/index.php/surface/article/view/58 |
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| Назва журналу: | Surface |
| Завантажити файл: |  |
Репозитарії
Surface| Резюме: | In this paper a theoretical model for the free semiconductor surface is proposed. The principled capability of the correct calculation of the electrostatic potential of the real semiconductors surface is demonstrated on the example of Silicon surface. The potential relief V(r̅,F) of Si(100) surface are investigated theoretically using methods of nonlocal electrostatics. It is shown, that taking into account the microscopic structure of the free semiconductor surface can lead to the local change of the potential barrier height along the surface. V(r̅,F) (and its amplitude δφ(r̅)) is determined by the microscopic structure of the real surface and the bulk (macroscopic) parameters of the semiconductor. |
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