Microscopic structure of the semiconductor surface in the external electric field

• Datum: 2001
• Автори та афіліації: L. G. Il'chenko — Інститут хімії поверхні НАН України; V. V. Il'chenko — Taras Shevchenko University; T. V. Goraychuk — Інститут хімії поверхні НАН України; I. W. Rangelow — University of Kassel
• Ключові слова: keywords
• Hauptverfasser: Il'chenko, L. G., Il'chenko, V. V., Goraychuk, T. V., Rangelow, I. W.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2001
• Online Zugang: https://surfacezbir.com.ua/index.php/surface/article/view/58
• Назва журналу: Surface

In this paper a theoretical model for the free semiconductor surface is proposed. The principled capability of the correct calculation of the electrostatic potential of the real semiconductors surface is demonstrated on the example of Silicon surface. The potential relief V(r̅,F) of Si(100) surface are investigated theoretically using methods of nonlocal electrostatics. It is shown, that taking into account the microscopic structure of the free semiconductor surface can lead to the local change of the potential barrier height along the surface. V(r̅,F) (and its amplitude δφ(r̅)) is determined by the microscopic structure of the real surface and the bulk (macroscopic) parameters of the semiconductor.