Тунелювання електронів в гетероструктурі германій/кремній з германієвими квантовими точками: теорія
It is shown that electron tunneling through a potential barrier that separates two quantum dots of germanium leads to the splitting of electron states localized over spherical interfaces (a quantum dot – a silicon matrix). The dependence of the splitting values of the electron levels on the paramete...
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| Date: | 2021 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2021
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| Subjects: | |
| Online Access: | https://www.cpts.com.ua/index.php/cpts/article/view/601 |
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| Journal Title: | Chemistry, Physics and Technology of Surface |