Тунелювання електронів в гетероструктурі германій/кремній з германієвими квантовими точками: теорія

It is shown that electron tunneling through a potential barrier that separates two quantum dots of germanium leads to the splitting of electron states localized over spherical interfaces (a quantum dot – a silicon matrix). The dependence of the splitting values of the electron levels on the paramete...

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Bibliographic Details
Date:2021
Main Authors: Pokutnyi, S. I., Shkoda, N. G.
Format: Article
Language:English
Published: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2021
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Online Access:https://www.cpts.com.ua/index.php/cpts/article/view/601
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Journal Title:Chemistry, Physics and Technology of Surface

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Chemistry, Physics and Technology of Surface