Metal-semiconductor phase transition in hydrated powders of VO2 as influenced by adsorbed water, polyethylene glycol medium, and tetraethylammonium bromide additives
The opportunity of use of a 1H NMR method for study of the performances of phase transition the metal - semiconductor in crystalline VO2 is considered. The influence of the adsorbed water, polyethylene glycol medium and presence of the tetraethylammonium bromide additives on the phase transition per...
Збережено в:
| Дата: | 2001 |
|---|---|
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2001
|
| Онлайн доступ: | https://surfacezbir.com.ua/index.php/surface/article/view/63 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Surface |
| Завантажити файл: | |
Репозитарії
Surface| Резюме: | The opportunity of use of a 1H NMR method for study of the performances of phase transition the metal - semiconductor in crystalline VO2 is considered. The influence of the adsorbed water, polyethylene glycol medium and presence of the tetraethylammonium bromide additives on the phase transition performances is explored. The phenomenon of phase heterogeneity VO2 is revealed which is exhibited as simultaneous existence of semiconductor and metal phases. Presumably this kind of heterogeneity is stipulated by an adsorption of bromide ions on a surface of particles VO2. |
|---|