Метод «очищення» поверхні фоточутливих елементів кремнієвих p-i-n фотодіодів від дислокацій
Investigating the formation of inversion layers (IL) at the Si-SiO2 interface in the manufacturing technology of silicon photodetectors, some dynamics of dislocations after isothermal annealing were revealed, which were absent in samples without inversion. After selective etching of samples with inv...
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| Date: | 2023 |
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| Main Author: | |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2023
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| Subjects: | |
| Online Access: | https://www.cpts.com.ua/index.php/cpts/article/view/671 |
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| Journal Title: | Chemistry, Physics and Technology of Surface |