Дизайн та дослідження фазових характеристик гетероструктури por-Ga2O3/por-GaAs/mono-GaAs

• Date: 2024
• Main Authors: Kovachov, S. S., Bohdanov, I. T., Drozhcha, D. S., Tikhovod, K. M., Bondarenko, V. V., Kosogov, I. G., Suchikova, Ya. O.
• Format: Article
• Language: English
• Published: Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine 2024
• Subjects: Ga2O3; GaAs; електрохімічне травлення; оксидування; пори; гетероструктури
• Online Access: https://www.cpts.com.ua/index.php/cpts/article/view/722
• Journal Title: Chemistry, Physics and Technology of Surface

The synthesis and characterization of heterostructure por-Ga2O3/GaAs represent a crucial advancement in nanomaterials, particularly in optoelectronic applications. Employing a two-stage electrochemical etching methodology, this research has elucidated the precise conditions required to fabricate suc...