Розрахунок зонної структури та її параметрів для 2D індій моноселеніду
InSe as a 2D structure possesses carrier mobility and adaptive band gap at the level of the best nanoelectronic materials. Structurally the crystal is layered — it contains monolayers, each consisting of four monoatomic sheets in the sequence Se-In-In-Se and due to the weak interlayer connection dif...
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| Datum: | 2025 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2025
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| Online Zugang: | https://www.cpts.com.ua/index.php/cpts/article/view/828 |
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| Назва журналу: | Chemistry, Physics and Technology of Surface |