LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES

The structure of LaNi9Si4 compound has been investigated by X-ray powder ans sing­le crystal method. This silicide crystalize in CeNi8.5Si4 structure type: space group I4 mcm, Pearson symbol tI56, а = 7.86415(6), с = 11.5101(1) Å, RB = 0.0653; а = 7.83933(17), с = 11.4472(5) Å, R =...

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Datum:2023
Hauptverfasser: Belan, Bohdana, Pukas, Svitala, Dzevenko, Mariya, Manyako, Mykola, Kuzhel, Bohdan, Gladyshevskii, Roman
Format: Artikel
Sprache:English
Veröffentlicht: V.I.Vernadsky Institute of General and Inorganic Chemistry 2023
Online Zugang:https://ucj.org.ua/index.php/journal/article/view/550
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Назва журналу:Ukrainian Chemistry Journal

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Ukrainian Chemistry Journal
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Zusammenfassung:The structure of LaNi9Si4 compound has been investigated by X-ray powder ans sing­le crystal method. This silicide crystalize in CeNi8.5Si4 structure type: space group I4 mcm, Pearson symbol tI56, а = 7.86415(6), с = 11.5101(1) Å, RB = 0.0653; а = 7.83933(17), с = 11.4472(5) Å, R = 0.0220, wR = 0.0734 for X-ray single crystal data. Unlike the prototype CeNi8.5Si4.5, where the Wyckoff position 4d is occupied by mixture of Ni and Si atoms, in the structure of the ternary silicide LaNi9Si4, the atoms are ordered in all Wyckoff positions. Additionally, the electrical properties for the compound were investigated. The temperature dependence of the electrical resistivity exhibits metal behaviour (ρ0 = 121.60 μΩ∙cm, θD = 191 K, A = 2.2·10-9 μΩ∙m∙K-3).