LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES
The structure of LaNi9Si4 compound has been investigated by X-ray powder ans single crystal method. This silicide crystalize in CeNi8.5Si4 structure type: space group I4 mcm, Pearson symbol tI56, а = 7.86415(6), с = 11.5101(1) Å, RB = 0.0653; а = 7.83933(17), с = 11.4472(5) Å, R =...
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| Дата: | 2023 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
V.I.Vernadsky Institute of General and Inorganic Chemistry
2023
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| Онлайн доступ: | https://ucj.org.ua/index.php/journal/article/view/550 |
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| Назва журналу: | Ukrainian Chemistry Journal |
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oai:ojs2.1444248.nisspano.web.hosting-test.net:article-5502023-08-10T12:23:05Z LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES Belan, Bohdana Pukas, Svitala Dzevenko, Mariya Manyako, Mykola Kuzhel, Bohdan Gladyshevskii, Roman lanthanum, nickel, silicon, crystal structure, electrical resistivity. The structure of LaNi9Si4 compound has been investigated by X-ray powder ans single crystal method. This silicide crystalize in CeNi8.5Si4 structure type: space group I4 mcm, Pearson symbol tI56, а = 7.86415(6), с = 11.5101(1) Å, RB = 0.0653; а = 7.83933(17), с = 11.4472(5) Å, R = 0.0220, wR = 0.0734 for X-ray single crystal data. Unlike the prototype CeNi8.5Si4.5, where the Wyckoff position 4d is occupied by mixture of Ni and Si atoms, in the structure of the ternary silicide LaNi9Si4, the atoms are ordered in all Wyckoff positions. Additionally, the electrical properties for the compound were investigated. The temperature dependence of the electrical resistivity exhibits metal behaviour (ρ0 = 121.60 μΩ∙cm, θD = 191 K, A = 2.2·10-9 μΩ∙m∙K-3). V.I.Vernadsky Institute of General and Inorganic Chemistry 2023-06-26 Article Article Inorganic Chemistry Неорганическая химия Неорганічна хімія application/pdf https://ucj.org.ua/index.php/journal/article/view/550 10.33609/2708-129X.89.05.2023.3-12 Ukrainian Chemistry Journal; Vol. 89 No. 5 (2023): Ukrainian Chemistry Journal; 3-12 Украинский химический журнал; Том 89 № 5 (2023): Ukrainian Chemistry Journal; 3-12 Український хімічний журнал; Том 89 № 5 (2023): Ukrainian Chemistry Journal; 3-12 2708-129X 2708-1281 en https://ucj.org.ua/index.php/journal/article/view/550/280 |
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Ukrainian Chemistry Journal |
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| datestamp_date |
2023-08-10T12:23:05Z |
| collection |
OJS |
| language |
English |
| topic_facet |
lanthanum nickel silicon crystal structure electrical resistivity. |
| format |
Article |
| author |
Belan, Bohdana Pukas, Svitala Dzevenko, Mariya Manyako, Mykola Kuzhel, Bohdan Gladyshevskii, Roman |
| spellingShingle |
Belan, Bohdana Pukas, Svitala Dzevenko, Mariya Manyako, Mykola Kuzhel, Bohdan Gladyshevskii, Roman LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES |
| author_facet |
Belan, Bohdana Pukas, Svitala Dzevenko, Mariya Manyako, Mykola Kuzhel, Bohdan Gladyshevskii, Roman |
| author_sort |
Belan, Bohdana |
| title |
LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES |
| title_short |
LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES |
| title_full |
LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES |
| title_fullStr |
LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES |
| title_full_unstemmed |
LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES |
| title_sort |
lani9si4: crystal structure and electrical properties |
| description |
The structure of LaNi9Si4 compound has been investigated by X-ray powder ans single crystal method. This silicide crystalize in CeNi8.5Si4 structure type: space group I4 mcm, Pearson symbol tI56, а = 7.86415(6), с = 11.5101(1) Å, RB = 0.0653; а = 7.83933(17), с = 11.4472(5) Å, R = 0.0220, wR = 0.0734 for X-ray single crystal data. Unlike the prototype CeNi8.5Si4.5, where the Wyckoff position 4d is occupied by mixture of Ni and Si atoms, in the structure of the ternary silicide LaNi9Si4, the atoms are ordered in all Wyckoff positions. Additionally, the electrical properties for the compound were investigated. The temperature dependence of the electrical resistivity exhibits metal behaviour (ρ0 = 121.60 μΩ∙cm, θD = 191 K, A = 2.2·10-9 μΩ∙m∙K-3).
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| publisher |
V.I.Vernadsky Institute of General and Inorganic Chemistry |
| publishDate |
2023 |
| url |
https://ucj.org.ua/index.php/journal/article/view/550 |
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AT belanbohdana lani9si4crystalstructureandelectricalproperties AT pukassvitala lani9si4crystalstructureandelectricalproperties AT dzevenkomariya lani9si4crystalstructureandelectricalproperties AT manyakomykola lani9si4crystalstructureandelectricalproperties AT kuzhelbohdan lani9si4crystalstructureandelectricalproperties AT gladyshevskiiroman lani9si4crystalstructureandelectricalproperties |
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2025-09-24T17:43:51Z |
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2025-09-24T17:43:51Z |
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