ОДЕРЖАННЯ ВІЛЬНИМ СПІКАННЯМ ВЕЛИКОГАБАРИТНИХ ДЕТАЛЕЙ З ФУНКЦІОНАЛЬНОГО КОМПОЗИТУ З КЕРАМІЧНОЮ МАТРИЦЕЮ НА ОСНОВІ НІТРИДУ АЛЮМІНІЮ ДЛЯ РОЗРОБКИ ШИРОКОСМУГОВОГО ВИСОКОВОЛЬТНОГО ПІДСИЛЮВАЧА

Influence of yttria addition on thermal conductivity of functional AlN-based ceramic matrix composite prepared by pressureless sintering was studied. Microstructural characteristics and measured values of thermal conductivity are presented. An optimal content of yttria in starting powder composition...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2024
Автори: Довгаль, Артем, Часник , Дмитро, Фесенко, Ігор, Туз, Юліан, Кайдаш, Оксана, Свердун, Володимир, Сербенюк , Тетяна, Часник , Василь, Омеляненко, Вадим
Формат: Стаття
Мова:Ukrainian
Опубліковано: Институт сверхтвердых материалов им. В. Н. Бакуля Национальной академии наук Украины 2024
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Онлайн доступ:http://altis-ism.org.ua/index.php/ALTIS/article/view/323
Теги: Додати тег
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Назва журналу:Tooling materials science

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Tooling materials science
Опис
Резюме:Influence of yttria addition on thermal conductivity of functional AlN-based ceramic matrix composite prepared by pressureless sintering was studied. Microstructural characteristics and measured values of thermal conductivity are presented. An optimal content of yttria in starting powder composition was estimated to prepare large-size parts for wide-range high-voltage amplifier. To improve the information transmission by preserving the signal shape during the amplification process, a broadband high-voltage amplifier with minimal distortion of the pulse fronts was developed using a AlN-based ceramic composite, prepared by pressureless sintering of large-sized parts with a thermal conductivity of 160 W/(m·K). The developed new broadband high-voltage amplifier with virtual power exceeds the parameters of the amplifier currently used in electrical engineering. Due to the use of large aluminum nitride parts, the developed new amplifier has the following characteristics: voltage up to 1 kV, frequency up to 100 kHz. The new broadband high-voltage amplifier has minimized leakage currents due to parasitic capacitance and is characterized by minimal distortion of pulse fronts, which allows for improved information transmission by preserving the signal shape during the amplification process.