ПОЛІРУВАННЯ ДЕТАЛЕЙ ОПТОТЕХНІКИ З НАПІВПРОВІДНИКОВИХ МАТЕРІАЛІВ

• Date: 2025
• Main Authors: Філатов, Юрій, Бояринцев, Андрій, Сідорко, Володимир, Рибалка, Ірина, Ковальов, Сергій, Ковальов, Віктор, Юрчишин, Оксана, Сосницька, Ольга, Пилипенко, Олексій
• Format: Article
• Language: Ukrainian
• Published: Институт сверхтвердых материалов им. В. Н. Бакуля Национальной академии наук Украины 2025
• Subjects: полірування; дисперсна система; напівпровідники; наночастинки; швидкість зняття матеріалу; шорсткість
• Online Access: http://altis-ism.org.ua/index.php/ALTIS/article/view/387
• Journal Title: Tooling materials science

The purpose of this work is to study the mechanism of polishing of optotechnics parts from semiconductor materials using dispersed systems of micro- and nanopowders and to study the patterns of removal of the processed material and the formation of the nanoprofile of the polished surface. As a result of investigation of the influence of the physical properties of the processed material and the dispersion system on the polishing parameters, it was established that the formation and removal of sludge nanoparticles from the processed surface is a consequence of Förster resonance energy transfer mediated by quantum dots (QD-FRET), which occurs in an open microresonator formed by the surfaces of the processed material and polishing powder particles. It is shown that during the polishing of optical parts made of semiconductor materials, the removal rate of the processed material increases with an increase in the size of the sludge nanoparticles and decreases with an increase in the effective band gap of the quantum dot (QD). The parameters of the roughness of the polished surfaces Ra, Rq, and Rmax increase with an increase in the size of the sludge nanoparticles and decrease with an increase in the effective width of the QD band gap. It was established that the results of the theoretical calculation of the speed of removal of the processed material during polishing of flat surfaces of optotechnic parts made of semiconductor materials are in good agreement with the data of the experimental determination of the polishing performance of indium antimonide, silicon carbide, germanium and silicon with a deviation of up to 5%. It is shown that the speed of removal of the processed material and the roughness of the polished surfaces satisfy the requirements for the process of polishing optical surfaces. It is advisable to use the results of the research in the development of technological processes for polishing parts of optoelectronics made of semiconductor materials.